A Product Line of
Diodes Incorporated
ZXTP2041F
40V PNP MEDIUM POWER TRANSISTOR IN SOT23
Features
BV
CEO
> -40V
I
C
= -1A High Continuous Current
I
CM
= -2A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< -500mV @ -1A
R
SAT
= 350mΩ for a Low Equivalent On-resistance
Complementary NPN type: ZXTN2040F
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Application
Power MOSFET gate driving
Low loss power switching
SOT23
C
E
C
B
Top View
Pin-Out
B
E
Top View
Device symbol
Ordering Information
(Note 4)
Product
ZXTP2041FTA
Notes:
Marking
P41
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
P41
P41 = Product Type Marking Code
ZXTP2041F
Da
tasheet Number: DS33721 Rev. 7 - 2
1 of 7
www.diodes.com
December 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2041F
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
-40
-40
-7
-1
-2
-200
-1
Unit
V
V
V
A
A
mA
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
C/W
C/W
C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 15 mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP2041F
Da
tasheet Number: DS33721 Rev. 7 - 2
2 of 7
www.diodes.com
December 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2041F
Thermal Characteristics and Derating Information
0.4
400
Max Power Dissipation (W)
0.3
Thermal Resistance (°C/W)
350
300
250
200
150
100
50
0
100µ
1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.2
0.1
0.0
0
25
50
75
100
125
150
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
10
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
ZXTP2041F
Da
tasheet Number: DS33721 Rev. 7 - 2
3 of 7
www.diodes.com
December 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2041F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
-40
-40
-7
-
-
-
300
300
250
160
30
-
-
-
-
-
150
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
-
34.9
19.2
249
62
Max
-
-
-
-100
-100
-100
-
800
-
-
-
-200
-350
-500
-1.1
-1.0
-
10
-
-
-
-
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
V
CB
= -30V
V
EB
= -5.6V
V
CE
= -30V
I
C
= -1mA, V
CE
= -5V
I
C
= -100mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
I
C
= -100mA, I
B
= -1mA
I
C
= -500mA, I
B
= -20mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -5V
I
C
= -50mA, V
CE
= -10V,
f = 100MHz
V
CB
= -10V, f = 1MHz,
V
CC
= -10V, I
C
= -500mA,
I
B1
= -I
B2
=-25mA
DC current transfer Static ratio (Note 9)
h
FE
-
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-on Voltage (Note 9)
Transitional Frequency
Output capacitance
Delay Time
Rise Time
Switching Time
Storage Time
Fall Time
Notes:
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
(d)
t
(r)
t
(s)
t
(f)
mV
V
V
MHz
pF
ns
9. Measured under pulsed conditions. Pulse width
≤
300μs. Duty cycle
≤2%.
ZXTP2041F
Da
tasheet Number: DS33721 Rev. 7 - 2
4 of 7
www.diodes.com
December 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2041F
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ZXTP2041F
Da
tasheet Number: DS33721 Rev. 7 - 2
5 of 7
www.diodes.com
December 2013
© Diodes Incorporated
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