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8EWS10SPBF

器件型号:8EWS10SPBF
器件类别:分立半导体    二极管   
厂商名称:Vishay(威世)
厂商官网:http://www.vishay.com
标准:
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器件描述

DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-252AA, DPAK-3, Rectifier Diode

参数
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码TO-252AA
包装说明R-PSSO-G2
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
应用GENERAL PURPOSE
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码TO-252AA
JESD-30 代码R-PSSO-G2
最大非重复峰值正向电流200 A
元件数量1
相数1
端子数量2
最低工作温度-55 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压1000 V
表面贴装YES
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

Bulletin I2108 rev. G 08/00
SAFE
IR
Series
8EWS..S
SURFACE MOUNTABLE
INPUT RECTIFIER DIODE
Description/Features
The 8EWS..S rectifier
SAFE
IR
series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation technology
used has reliable operation up to 150° C junction
temperature.
The
High Reverse Voltage
range available allows
design of input stage primary rectification with
Outstanding Voltage Surge
capability.
Typical applications are in input rectification and these
products are designed to be used with International
Rectifier Switches and Output Rectifiers which are
available in identical package outlines.
V
F
< 1V @ 5A
I
FSM
= 200A
V
RRM
800 to 1200V
Output Current in Typical Applications
Applications
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, R
thCA
= 15°C/W
Aluminum IMS with heatsink, R
thCA
= 5°C/W
T
A
= 55°C, T
J
= 125°C, footprint 300mm
2
Single-phase Bridge
1.2
2.5
5.5
Three-phase Bridge
1.6
2.8
6.5
Units
A
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal
waveform
V
RRM
Range (*)
I
FSM
V
F
T
J
@ 5A, T
J
= 25°C
Package Outline
Units
A
V
A
V
°C
8EWS..S
8
800 to 1200
200
1.0
- 55 to 150
TO-252AA (D-Pak)
(*)
for higher voltage up to 1600V contact factory
1
8EWS..S
SAFE
IR
Series
Bulletin I2108 rev. G 08/00
Voltage Ratings
V
RRM
, maximum
Part Number
peak reverse voltage
V
8EWS08S
8EWS10S
8EWS12S
800
1000
1200
V
RSM
, maximum non repetitive
peak reverse voltage
V
900
1100
1300
I
RRM
150°C
mA
0.5
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
I
2
t
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for fusing
8EWS..S
8
170
200
144
204
Units
A
A
A
2
s
A
2
√s
Conditions
@ T
C
= 95° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
I
2
√t
Max. I
2
√t
for fusing
2040
Electrical Specifications
Parameters
V
FM
r
t
Max. Forward Voltage Drop
Forward slope resistance
8EWS..S
1.1
21.8
0.81
0.05
0.50
Units
V
mΩ
V
mA
Conditions
@ 8A, T
J
= 25°C
T
J
= 150°C
T
J
= 25 °C
T
J
= 150 °C
V
F(TO)
Threshold voltage
I
RM
Max. Reverse Leakage Current
V
R
= rated V
RRM
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
Soldering Temperature
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Typ. Thermal Resistance Junction
to Ambient (PCB Mount)**
wt
T
Approximate Weight
Case Style
1(0.03)
g (oz.)
TO-252AA (D-PAK)
8EWS..S
- 55 to 150
- 55 to 150
240
3
50
Units
°C
°C
°C
°C/W
°C/W
Conditions
for 10 seconds (1.6mm from case)
DC operation
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
2
8EWS..S
SAFE
IR
Series
Bulletin I2108 rev. G 08/00
M a xim um A llo w ab le C ase Tem p e rature ( C )
M axim um Allo w able C ase Tem p erature ( C )
150
140
130
120
110
100
30
90
80
70
0
1
2
3
4
5
6
7
8
9
Averag e Forw ard C urre nt (A)
60
90
120
180
C o nductio n A ngle
8EW S ..S Se ries
R
thJC
(D C ) = 3 C /W
150
140
130
120
110
100
90
80
0
2
4
30
60
8EW S ..S Se ries
R
thJC
(D C ) = 3 C /W
C o nd uctio n P erio d
90
120
180
DC
6
8
10
12
14
Avera ge Forw ard C urrent (A )
Fig. 1 - Current Rating Characteristics
M axim um Ave rag e Forw ard Pow er Lo ss (W )
M axim um A ve rage Fo rw ard Pow e r Loss (W )
12
10
8
6
4
C o n ductio n An gle
Fig. 2 - Current Rating Characteristics
14
12
10
8
6 RM S Lim it
4
2
0
0
2
4
6
8
10
12
14
Averag e Forw ard C urrent (A)
C ond uctio n P erio d
180
120
90
60
30
RM S Lim it
DC
180
120
90
60
30
2
0
0
1
2
3
4
8 EW S..S Series
T
J
= 150 C
5
6
7
8
9
8EW S ..S Se ries
T
J
= 150 C
A vera ge Fo rw ard C urren t (A)
Fig. 3 - Forward Power Loss Characteristics
P eak Half Sin e W ave Fo rw ar d C u rrent (A )
180
170
160
150
140
130
120
110
100
1
10
100
Nu m b er Of E qu a l Am plitu de Half C yc le C u rre nt Pu lse s (N)
Fig. 4 - Forward Power Loss Characteristics
200
190
180
170
160
150
140
130
120
110
100
0.01
8EW S..S Se rie s
0.1
Pu lse Train D uration (s)
1
A t A ny Rated Loa d C ond itio n A nd W ith
R ated V
RR M
A p plie d Follow ing Surg e .
In itia l T
J
= 150 C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
Pea k H alf Sin e W a ve Forw a rd C urren t (A )
M a xim um No n Rep etitiv e Surge C u rrent
Ve rsus Pulse Train Duration.
In itial T
J
= 150 C
N o Vo lta ge R eap p lied
Ra ted V
RRM
R ea pp lied
8 EW S ..S Se rie s
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
3
8EWS..S
SAFE
IR
Series
Bulletin I2108 rev. G 08/00
100
8E W S ..S Se ries
Instanta neo us Forw ard C urrent (A)
10
T = 25 C
J
1
T
J
= 150 C
0.1
0
0.5
1
1.5
2
2.5
In sta n ta n e ous Fo rw a rd V o lta g e (V )
Fig. 7 - Forward Voltage Drop Characteristics
Transie nt Therm a l Im ped anc e Z
thJC
( C /W )
10
Stea dy State V a lu e
(D C O p era tio n)
1
D
D
D
D
D
=
=
=
=
=
0 .50
0 .33
0 .25
0 .17
0 .0 8
8 EW S..S Series
0.1
0.0001
0.001
0.01
Sq u a re W av e Pu lse D u ra tio n (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
4
8EWS..S
SAFE
IR
Series
Bulletin I2108 rev. G 08/00
Ordering Information Table
Device Code
8
1
E
2
W
3
S
4
12
5
S
6
TRL
7
1
BASE
CATHODE
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Current Rating
Circuit Configuration
E = Single Diode
Package
W = D-PAK
Type of Silicon
S = Standard Recovery Rectifier
Voltage code: Code x 100 = V
RRM
S = Surface Mountable
Tape and Reel Option
TRL = Left Reel
TRR = Right Orientation Reel
08 = 800V
10 = 1000V
12 = 1200V
2
3
ANODE CATHODE ANODE
(*)
for higher voltage up to 1600V contact factory
Outline Table
6.73 (0.26)
6.35 (0.25)
5.46 (0.21)
5.21 (0.20)
4
1.27 (0.05)
0.88 (0.03)
2.38 (0.09)
2.19 (0.08)
1.14 (0.04)
0.89 (0.03)
0.58 (0.02)
0.46 (0.02)
6.45 (0.24)
MINIMUM RECOMMENDED FOOTPRINT
5.97 (0.24)
1.64 (0.02)
1
2
3
6.22 (0.24)
5.97 (0.23)
10.42 (0.41)
9.40 (0.37)
5.68 (0.22)
6.48 (0.26)
10.67 (0.42)
1.52 (0.06)
1.15 (0.04)
2x
1.14 (0.04)
0.76 (0.03)
2.28 (0.09)
2x
3x
0.89 (0.03)
0.64 (0.02)
1
2
3
4
-
-
-
-
Anode
Cathode
Gate
Anode
0.51 (0.02)
MIN.
0.58 (0.02)
0.46 (0.02)
2x
2.54 (0.10)
1.65 (0.06)
2x
2.28 (0.09)
2x
4.57 (0.18)
Dimensions in millimeters and (inches)
5

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