STP16NK60Z - STB16NK60Z-S
STW16NK60Z
N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I
2
SPAK / TO-247
Zener-Protected SuperMESH™ MOSFET
TYPE
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
s
s
s
s
s
s
V
DSS
600 V
600 V
600 V
R
DS(on)
< 0.42
Ω
< 0.42
Ω
< 0.42
Ω
I
D
14 A
14 A
14 A
Pw
190 W
190 W
190 W
3
1
2
TYPICAL R
DS
(on) = 0.38
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
12
TO-220
I
2
SPAK
3
2
1
TO-247
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES
ORDER CODE
PART NUMBER
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
MARKING
P16NK60Z
B16NK60Z
W16NK60Z
PACKAGE
TO-220
I
2
SPAK
TO-247
PACKAGING
TUBE
TUBE
TUBE
March 2004
1/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
V
ESD(G-S)
dv/dt (1)
T
j
T
stg
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD (HBM-C= 100pF, R= 1.5KΩ)
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Value
600
600
± 30
14
8.8
56
190
1.51
6000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
( ) Pulse width limited by safe operating area
(1) I
SD
≤
14 A, di/dt
≤
200 A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220/ I²SPAK
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
300
0.66
50
TO-247
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
14
360
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10V, I
D
= 7 A
3
3.75
0.38
Min.
600
1
50
±10
4.5
0.42
Typ.
Max.
Unit
V
µA
µA
µA
V
Ω
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
C
oss eq.
(3)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DS
= 15 V
,
I
D
= 7 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
12
2650
285
62
158
30
25
70
15
86
17
46
Max.
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V, V
DS
= 0V to 480V
V
DD
= 480 V, I
D
= 14 A
R
G
= 4.7Ω V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 14 A,
V
GS
= 10V
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 14 A, V
GS
= 0
I
SD
= 14 A, di/dt = 100 A/µs
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
I
SD
= 14 A, di/dt = 100 A/µs
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
490
5.4
22
585
7
24
Test Conditions
Min.
Typ.
Max.
14
56
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
3/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
Safe Operating Area for TO-220/I²SPAK
Thermal Impedance for TO-220/I²SPAK
Safe Operating Area for TO-247
Thermal Impedance for TO-247
Output Characteristics
Transfer Characteristics
4/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/11
MEMS传感器
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