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1C6165GG-R

器件型号:1C6165GG-R
器件类别:分立半导体    二极管   
文件大小:199KB,共4页
厂商名称:SENSITRON
厂商官网:http://www.sensitron.com/
下载文档

器件描述

Trans Voltage Suppressor Diode

参数
参数名称属性值
是否Rohs认证不符合
包装说明X-XUUC-N1
Reach Compliance Codecompli
ECCN代码EAR99
最小击穿电压81.9 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码X-XUUC-N1
JESD-609代码e0
元件数量1
端子数量1
最高工作温度175 °C
最低工作温度-55 °C
封装主体材料UNSPECIFIED
封装形状UNSPECIFIED
封装形式UNCASED CHIP
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大重复峰值反向电压69.2 V
表面贴装YES
技术AVALANCHE
端子面层Tin/Lead (Sn/Pb)
端子形式NO LEAD
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

SENSITRON
___
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5363, REV -
1C6139/A thru 1C6173/A
Standard
HERMETIC BI-DIRETIONAL
TRANSIENT SUPPRESSOR DIE
1500W Transient Voltage Suppressor Diode Chip/Die
Operating and Storage Temperature: -55 C to +175 C
o
o
SERIES
TYPE
MIN
BREAKDOWN
VOLTAGE
V(BR) @ I(BR)
Vdc
7.13
7.38
7.79
8.19
8.65
9
9.5
9.9
10.45
10.8
11.4
11.7
12.35
13.5
14.25
14.4
15.2
16.2
17.1
18
19
19.8
20.9
21.6
22.8
24.3
25.7
27
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
mA dc
175
150
150
150
150
125
125
125
125
100
100
100
100
75
75
75
75
65
65
65
65
50
50
50
50
50
50
40
40
40
40
30
30
30
30
30
30
25
25
25
25
20
20
1500W
1C6139A
1C6140
1C6140A
1C6141
1C6141A
1C6142
1C6142A
1C6143
1C6143A
1C6144
1C6144A
1C6145
1C6145A
1C6146
1C6146A
1C6147
1C6147A
1C6148
1C6148A
1C6149
1C6149A
1C6150
1C6150A
1C6151
1C6151A
1C6152
1C6152A
1C6153
1C6153A
1C6154
1C6154A
1C6155
1C6155A
1C6156
1C6156A
1C6157
1C6157A
1C6158
1C6158A
1C6159
1C6159A
1C6160
1C6160A
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
Vdc
5.7
6.2
6.2
6.9
6.9
7.6
7.6
8.4
8.4
9.1
9.1
9.9
9.9
11.4
11.4
12.2
12.2
13.7
13.7
15.2
15.2
16.7
16.7
18.2
18.2
20.6
20.6
22.8
22.8
25.1
25.1
27.4
27.4
29.7
29.7
32.7
32.7
35.8
35.8
38.8
38.8
42.6
42.6
MAXIMUM
REVERSE
CURRENT
IR1
Adc
50
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAX. CLAMP.
VOLTAGE
VC @ IP
tp = 1ms
V(pk)
11.2
12.7
12.1
14
13.4
15.2
14.5
16.3
15.6
17.7
16.9
19
18.2
21.9
21
23.4
22.3
26.3
25.1
29
27.7
31.9
30.5
34.8
33.3
39.2
37.4
43.6
41.6
47.9
45.7
52.3
49.9
56.2
53.6
62
59.1
67.7
64.6
73.5
70.1
80.7
77
MAX. PEAK
PULSE
CURRENT
IP
A(pk)
44.6
39.0
41.3
35.7
37.3
32.9
34.5
30.7
32.0
28.2
29.6
26.3
27.5
22.8
23.8
21.4
22.4
19.0
19.9
17.2
18.0
15.7
16.4
14.4
15.0
12.8
13.4
11.5
12.0
10.4
10.9
9.6
10.0
8.9
9.3
8.1
8.5
7.4
7.7
6.8
7.1
6.2
6.5
MAX. TEMP.
COEFFICIENT
V(BR)
% /
C
.06
.06
.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.08
0.085
0.085
0.085
0.085
0.085
0.085
0.09
0.09
0.09
0.09
0.09
0.09
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
©2013 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com
1C6139/A thru 1C6173/A
Standard
HERMETIC BI-DIRETIONAL
TRANSIENT SUPPRESSOR DIE
SENSITRON
TECHNICAL DATA
DATA SHEET 5363, REV -
MIN
BREAKDOWN
VOLTAGE
V(BR) @ I(BR)
Vdc
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
104.5
108
114
117
123.5
135
142.5
144
152
162
171
180
190
mA dc
20
20
20
20
20
20
15
15
15
15
12
12
12
12
10
10
10
10
8
8
8
8
5
5
5
5
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
Vdc
47.1
47.1
51.7
51.7
56
56
62.2
62.2
69.2
69.2
76
76
83.6
83.6
91.2
91.2
98.8
98.8
114
114
121.6
121.6
136.8
136.8
152
152
MAXIMUM
REVERSE
CURRENT
IR1
Adc
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAX. CLAMP.
VOLTAGE
VC @ IP
tp = 1ms
V(pk)
89.3
85.3
98
97.1
108.1
103.1
118.2
112.8
131.1
125.1
144.1
137.6
158.5
151.3
172.9
165.1
187.3
178.8
216.2
206.3
228.8
218.4
257.4
245.7
286
273
MAX. PEAK
PULSE
CURRENT
IP
A(pk)
5.6
5.9
5.1
5.1
4.6
4.8
4.2
4.4
3.8
4
3.5
3.6
3.2
3.3
2.9
3
2.7
2.8
2.3
2.4
2.2
2.3
1.9
2
1.7
1.8
MAX. TEMP.
COEFFICIENT
V(BR)
% /
C
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.105
0.105
0.105
0.105
0.105
0.105
0.11
0.11
0.11
0.11
SERIES
TYPE
1500W
1C6161
1C6161A
1C6162
1C6162A
1C6163
1C6163A
1C6164
1C6164A
1C6165
1C6165A
1C6166
1C6166A
1C6167
1C6167A
1C6168
1C6168A
1C6169
1C6169A
1C6170
1C6170A
1C6171
1C6171A
1C6172
1C6172A
1C6173
1C6173A
©2013 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com
1C6139/A thru 1C6173/A
Standard
HERMETIC BI-DIRETIONAL
TRANSIENT SUPPRESSOR DIE
SENSITRON
TECHNICAL DATA
DATA SHEET 5363, REV. -
PACKAGE DIMENSIONS:
ANODE
Mechanical Dimensions: inches (mm)
Standard Metallization:
Top side: Al; 25 kÅ minimum
Bottom side:
Ti/Ni/Ag: 30 kÅ minimum
Gold Option Available for Top and/or Bottom Metalization:
Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA)
ANODE
CATHODE
Reversed polarity option available
1500W TVS
Die
Diameter
A
0.125 ± 0.003
(3.175 ± 0.076)
Die Flat
to Flat
B
0.107 ± 0.003
(2.718 ± 0.076)
Metal
Diameter
C
0.100 ± 0.003
(2.540 ± 0.076)
Metal Flat
to Flat
E
0.087 ± 0.003
(2.286 ± 0.076)
Die
Thickness
Z
0.010 ± 0.001
(0.254 ± 0.025)
PART ORDERING INFORMATION
Default part number is Al top, Ag bottom.
Add the following suffix for these metal combinations:
Bottom
Part Number
Ag
1C6162
AG
Au
1C6162AG
BB
Ag
1C6162BB
BG
Au
1C6162BG
GG
Au
1C6162GG
GB
Ag
1C6162GB
-R
- Reverse polarity -
1C6162-R
xx-R
-Metalization Option (above) with Reverse Polarity-
1C6162xx-R
A = Ti (0.3 kA) / Al (25 kA)
B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA)
G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA)
(TOP)
/ Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA)
(BOTTOM)
Suffix
Top
Al
Al
Ag
Ag
Au
Au
©2013 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com
1C6139/A thru 1C6173/A
Standard
HERMETIC BI-DIRETIONAL
TRANSIENT SUPPRESSOR DIE
SENSITRON
TECHNICAL DATA
DATA SHEET 5363, REV. -
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2013 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com
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