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Datasheet> 器件分类 > 分立半导体> 二极管> NSDEMP11XV6T1
 

NSDEMP11XV6T1

器件型号：NSDEMP11XV6T1
器件类别：分立半导体    二极管   
文件大小：734KB，共4页
厂商名称：Rochester Electronics
厂商官网：https://www.rocelec.com/
标准：
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器件描述

0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN

参数
参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Rochester Electronics
包装说明R-PDSO-F6
针数6
制造商包装代码CASE 463A-01
Reach Compliance Codeunknown
配置2 BANKS, COMMON ANODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-F6
JESD-609代码e3
湿度敏感等级NOT SPECIFIED
元件数量4
端子数量6
最大输出电流0.1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度（摄氏度）260
最大功率耗散0.5 W
认证状态COMMERCIAL
最大反向恢复时间0.004 µs
表面贴装YES
端子面层MATTE TIN
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间40
Base Number Matches1

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NSDEMP11XV6T1,
NSDEMP11XV6T5
Common Anode Quad
Array Switching Diode
These Common Anode Epitaxial Planar QUAD Diodes are
designed for use in ultra high speed switching applications. The
NSDEMP11XV6T1 device is housed in the SOT−563 package which
is designed for low power surface mount applications, where board
space is at a premium.
Features
http://onsemi.com
(3)
(2)
(1)
•
Fast t
rr
•
Low C
D
•
These are Pb−Free Devices
(4)
(5)
(6)
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
(Note 1)
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
1
mAdc
mAdc
Adc
SOT−563
CASE 463A
PLASTIC
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
R
qJA
T
J
, T
stg
T
A
= 25°C
R
qJA
T
A
= 25°C
MARKING DIAGRAM
Symbol
P
D
Max
357
(Note 2)
2.9
(Note 2)
350
(Note 2)
Max
500
(Note 2)
4.0
(Note 2)
250
(Note 2)
−55 to
+150
Unit
mW
mW/°C
°C/W
P9 = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
P9 M
G
G
Symbol
P
D
Unit
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
NSDEMP11XV6T1
Package
Shipping
†
SOT−563* 4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1
mS
2. FR−4 @ Minimum Pad
NSDEMP11XV6T1G SOT−563* 4000/Tape & Reel
NSDEMP11XV6T5
SOT−563* 8000/Tape & Reel
NSDEMP11XV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 3
Publication Order Number:
NSDEMP11XV6T1/D
NSDEMP11XV6T1, NSDEMP11XV6T5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
Symbol
I
R
V
F
V
R
C
D
t
rr
(Note 3)
Condition
V
R
= 70 V
I
F
= 100 mA
I
R
= 100
mA
V
R
= 6.0 V, f = 1.0 MHz
I
F
= 5.0 mA, V
R
= 6.0 V, R
L
= 100
W,
I
rr
= 0.1 I
R
Min
−
−
0
−
−
Max
0.1
1.2
−
3.5
4.0
Unit
mAdc
Vdc
Vdc
pF
ns
3. t
rr
Test Circuit for NSDEMP11XV6T1 in Figure 4.
TYPICAL ELECTRICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (mA)
T
A
= 85°C
10
T
A
= −40°C
IR , REVERSE CURRENT (
μ
A)
10
T
A
= 150°C
T
A
= 125°C
1.0
0.1
T
A
= 85°C
T
A
= 55°C
1.0
T
A
= 25°C
0.01
T
A
= 25°C
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 1. Forward Voltage
1.75
CD, DIODE CAPACITANCE (pF)
Figure 2. Reverse Current
1.5
1.25
1.0
0.75
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
t
r
t
p
t
10%
A
R
L
90%
V
R
t
p
= 2
ms
t
r
= 0.35 ns
I
rr
= 0.1 I
R
I
F
= 5.0 mA
V
R
= 6 V
R
L
= 100
W
I
F
t
rr
t
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1
http://onsemi.com
2
NSDEMP11XV6T1, NSDEMP11XV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
A
L
4
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
1
2
3
E
−Y−
H
E
DIM
A
b
C
D
E
e
L
H
E
e
b
6 PL
5
0.08 (0.003)
C
M
X Y
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
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800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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For additional information, please contact your local
Sales Representative
http://onsemi.com
3
NSDEMP11XV6T1/D
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与NSDEMP11XV6T1相近的元器件有：NSDEMP11XV6T5G、NSDEMP11XV6T1G、NSDEMP11XV6T5。描述及对比如下：
型号 NSDEMP11XV6T1 NSDEMP11XV6T5G NSDEMP11XV6T1G NSDEMP11XV6T5
描述 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN 0.1A, 4 ELEMENT, SILICON, SIGNAL DIODE, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN 0.1A, 4 ELEMENT, SILICON, SIGNAL DIODE, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN 0.1A, 4 ELEMENT, SILICON, SIGNAL DIODE, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN
是否无铅 不含铅 不含铅 不含铅 不含铅
厂商名称 Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
包装说明 R-PDSO-F6 LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN
针数 6 6 6 6
制造商包装代码 CASE 463A-01 CASE 463A-01 CASE 463A-01 CASE 463A-01
Reach Compliance Code unknown unknown unknown unknown
配置 2 BANKS, COMMON ANODE, 2 ELEMENTS 2 BANKS, COMMON ANODE, 2 ELEMENTS 2 BANKS, COMMON ANODE, 2 ELEMENTS 2 BANKS, COMMON ANODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
元件数量 4 4 4 4
端子数量 6 6 6 6
最大输出电流 0.1 A 0.1 A 0.1 A 0.1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 260 260
最大功率耗散 0.5 W 0.5 W 0.5 W 0.5 W
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
最大反向恢复时间 0.004 µs 0.004 µs 0.004 µs 0.004 µs
表面贴装 YES YES YES YES
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40
Base Number Matches 1 1 1 1

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器件捷径:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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