器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRFP250 | Thinki Semiconductor Co.,Ltd. | ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs | 下载 |
IRFP250 | ISC | iscN-Channel MOSFET Transistor | 下载 |
IRFP250 | ETC2 | SEMICONDUCTORS | 下载 |
IRFP250 | IXYS | High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | 下载 |
IRFP250 | Renesas(瑞萨电子) | 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 下载 |
IRFP250 | FCI / Amphenol | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
IRFP250 | Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
IRFP250 | General Electric Solid State | Transistor | 下载 |
IRFP250 | Texas Instruments(德州仪器) | IRFP250 | 下载 |
IRFP250 | Rochester Electronics | 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 下载 |
IRFP250 | ST(意法半导体) | MOSFET N-Ch 200 Volt 33 Amp | 下载 |
IRFP250 | Vishay(威世) | MOSFET N-Chan 200V 30 Amp | 下载 |
IRFP250 | IXYS ( Littelfuse ) | MOSFET 30 Amps 200V 0.085 Rds | 下载 |
IRFP250 | International Rectifier ( Infineon ) | POWER, FET | 下载 |
IRFP250 | SAMSUNG(三星) | POWER, FET | 下载 |
IRFP250 | Fairchild | POWER, FET | 下载 |
IRFP250_17 | Vishay(威世) | Power MOSFET | 下载 |
IRFP250_V01 | Vishay(威世) | Power MOSFET | 下载 |
IRFP250A | Thinki Semiconductor Co.,Ltd. | ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs | 下载 |
IRFP250A | ISC | isc N-Channel MOSFET Transistor | 下载 |
IRFP250A | SAMSUNG(三星) | Power Field-Effect Transistor, 32A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | 下载 |
IRFP250A | Fairchild | Advanced Power MOSFET | 下载 |
IRFP250B | Thinki Semiconductor Co.,Ltd. | ThinkiSemi 200V,32A N-Channel Planar Process Power MOSFETs | 下载 |
IRFP250B | Rochester Electronics | 32A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | 下载 |
IRFP250B | - | 200V N-Channel MOSFET | 下载 |
IRFP250B | Fairchild | POWER, FET | 下载 |
IRFP250M | Thinki Semiconductor Co.,Ltd. | ThinkiSemi 200V,30A N-Channel Planar Process Power MOSFETs | 下载 |
IRFP250M | ISC | N-Channel MOSFET Transistor | 下载 |
IRFP250M | Infineon(英飞凌) | —— | 下载 |
IRFP250MPBF | Thinki Semiconductor Co.,Ltd. | ThinkiSemi 200V,30A N-Channel Planar Process Power MOSFETs | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
IRFP250M 、 IRFP250MPBF | 下载文档 |
IRFP250N 、 IRFP250NPBF | 下载文档 |
IRFP250 、 IRFP250B | 下载文档 |
IRFP250MPBF | 下载文档 |
IRFP250N | 下载文档 |
IRFP250MPBF_15 | 下载文档 |
IRFP250MPBF | 下载文档 |
IRFP250NPBF_15 | 下载文档 |
IRFP250R | 下载文档 |
IRFP250R | 下载文档 |
型号 | IRFP250 | IRFP250B |
---|---|---|
描述 | POWER, FET | POWER, FET |
是否Rohs认证 | 不符合 | 不符合 |
厂商名称 | Fairchild | Fairchild |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | TO-3P, 3 PIN |
Reach Compliance Code | unknow | compli |
ECCN代码 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 810 mJ | 600 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 200 V | 200 V |
最大漏极电流 (Abs) (ID) | 33 A | 32 A |
最大漏极电流 (ID) | 33 A | 32 A |
最大漏源导通电阻 | 0.085 Ω | 0.085 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 |
JESD-609代码 | e0 | e0 |
元件数量 | 1 | 1 |
端子数量 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 180 W | 204 W |
最大脉冲漏极电流 (IDM) | 130 A | 128 A |
认证状态 | Not Qualified | Not Qualified |
表面贴装 | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON |
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