器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRF250 | ISC | Nanosecond Switching Speed | 下载 |
IRF250 | ST(意法半导体) | 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | 下载 |
IRF250 | Texas Instruments(德州仪器) | IRF250 | 下载 |
IRF250 | SEMELAB | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | 下载 |
IRF250 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | 下载 |
IRF250 | IXYS | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
IRF250 | Motorola ( NXP ) | 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 下载 |
IRF250 | Rochester Electronics | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | 下载 |
IRF250 | Littelfuse | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 下载 |
IRF250 | All Sensors | N-channel power mosfet | 下载 |
IRF250 | New Jersey Semiconductor | POWER, FET | 下载 |
IRF250 | Nell | POWER, FET | 下载 |
IRF250 | IXYS ( Littelfuse ) | POWER, FET | 下载 |
IRF250 | - | POWER, FET | 下载 |
IRF250 | Intersil ( Renesas ) | POWER, FET | 下载 |
IRF250 | SAMSUNG(三星) | POWER, FET | 下载 |
IRF250 | SEME-LAB | POWER, FET | 下载 |
IRF250-JQR-B | TT Electronics plc | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | 下载 |
IRF250-JQR-B | SEMELAB | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | 下载 |
IRF250-JQR-BR1 | TT Electronics plc | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | 下载 |
IRF250-JQR-BR1 | SEMELAB | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | 下载 |
IRF250CF | Texas Instruments(德州仪器) | IRF250CF | 下载 |
IRF250E | Infineon(英飞凌) | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | 下载 |
IRF250E | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 下载 |
IRF250EA | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 下载 |
IRF250EAPBF | Infineon(英飞凌) | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 下载 |
IRF250EAPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 下载 |
IRF250EB | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 下载 |
IRF250EBPBF | Infineon(英飞凌) | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 下载 |
IRF250EBPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 下载 |
对应元器件 | pdf文档资料下载 |
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IRF250SMD 、 IRF250SMD-JQR-B 、 IRF250SMD-JQR-B 、 IRF250SMD-JQR-BR4 、 IRF250SMD-JQR-BR4 、 IRF250SMDR4 、 IRF250SMDR4 | 下载文档 |
IRF250E 、 IRF250EAPBF 、 IRF250EBPBF 、 IRF250ECPBF 、 IRF250ED 、 IRF250EDPBF 、 IRF250EPBF | 下载文档 |
IRF250-JQR-B 、 IRF250-JQR-B 、 IRF250-JQR-BR1 、 IRF250-JQR-BR1 、 IRF250R1 、 IRF250R1 | 下载文档 |
IRF250PBF | 下载文档 |
IRF250P224 | 下载文档 |
IRF250R | 下载文档 |
IRF250P225 | 下载文档 |
IRF250R | 下载文档 |
IRF250SMD | 下载文档 |
IRF250SMD | 下载文档 |
型号 | IRF250E | IRF250EAPBF | IRF250EBPBF | IRF250ECPBF | IRF250ED | IRF250EDPBF | IRF250EPBF |
---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
是否Rohs认证 | 不符合 | 符合 | 符合 | 符合 | 不符合 | 符合 | 符合 |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
Reach Compliance Code | unknow | compli | compliant | compliant | unknown | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 200 mJ | 200 mJ | 200 mJ | 200 mJ | 200 mJ | 200 mJ | 200 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
最大漏极电流 (ID) | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A |
最大漏源导通电阻 | 0.09 Ω | 0.09 Ω | 0.09 Ω | 0.09 Ω | 0.09 Ω | 0.09 Ω | 0.09 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-204AE | TO-204AE | TO-204AE | TO-204AE | TO-204AE | TO-204AE | TO-204AE |
JESD-30 代码 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 120 A | 120 A | 120 A | 120 A | 120 A | 120 A | 120 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
参考标准 | CECC | CECC | CECC | CECC | CECC | CECC | CECC |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
包装说明 | - | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | - | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
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