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ZXMN10A08

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ZXMN10A08

",共25个Datasheet相关器件
器件名 厂商 描 述 功能
ZXMN10A08 Zetex Semiconductors 2 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 下载
ZXMN10A08DN8 Diodes 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 下载
ZXMN10A08DN8 Zetex Semiconductors 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 下载
ZXMN10A08DN8_15 Diodes 100V N-CHANNEL ENHANCEMENT MODE MOSFET 下载
ZXMN10A08DN8TA Diodes Incorporated MOSFET 100V 2.1A N-Channel Enhancement MOSFET 下载
ZXMN10A08DN8TA Diodes 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 下载
ZXMN10A08DN8TA Zetex Semiconductors 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 下载
ZXMN10A08DN8TC Zetex Semiconductors Power Field-Effect Transistor, 2.1A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 下载
ZXMN10A08DN8TC Diodes 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET 下载
ZXMN10A08E6 Diodes 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 下载
ZXMN10A08E6 Zetex Semiconductors 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 下载
ZXMN10A08E6_05 Zetex Semiconductors 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 下载
ZXMN10A08E6_15 Diodes 100V N-CHANNEL ENHANCEMENT MODE MOSFET 下载
ZXMN10A08E6TA Diodes 漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):1.5A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:250mΩ @ 3.2A,10V 最大功率耗散(Ta=25°C):1.1W 类型:N沟道 N沟道,100V,1.9A 下载
ZXMN10A08E6TA Zetex Semiconductors 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 下载
ZXMN10A08E6TC Diodes MOSFET 100V N-Chnl UMOS 下载
ZXMN10A08E6TC Zetex Semiconductors 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 下载
ZXMN10A08G KEXIN N-Channel MOSFET 下载
ZXMN10A08G Diodes 2 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 下载
ZXMN10A08G Zetex Semiconductors 2 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 下载
ZXMN10A08G_15 Diodes 100V SOT223 N-CHANNEL ENHANCEMENT MODE MOSFET 下载
ZXMN10A08GTA Zetex Semiconductors Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN 下载
ZXMN10A08GTA Diodes 漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):2A 栅源极阈值电压:2V @ 250uA 漏源导通电阻:250mΩ @ 3.2A,10V 最大功率耗散(Ta=25°C):2W 类型:N沟道 N沟道,100V,2A,250mΩ@10V 下载
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