器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
SI1032 | ETC2 | DEVELOPMENT KIT SI101X | 下载 |
SI1032-A-GM | Silicon Laboratories Inc | IC RF TXRX+MCU ISM<1GHZ 85-VFLGA | 下载 |
SI1032-A-GM | Silicon | RF microcontrollers - mcu 32kb 8kb ram prgrm xcvr, DC-DC | 下载 |
SI1032-A-GM | SILABS | Ultra Low Power 128K, LCD MCU Family | 下载 |
SI1032-A-GMR | Silicon Laboratories Inc | IC RF TXRX+MCU ISM<1GHZ 85-VFLGA | 下载 |
SI1032-A-GMR | Silicon | RF microcontrollers - mcu 32kb, 8kb ram +20dbm, lcd, xcvr | 下载 |
SI1032-B-GM3 | Silicon Laboratories Inc | IC RF TXRX+MCU ISM<1GHZ 85-VFLGA | 下载 |
SI1032-B-GM3R | Silicon Laboratories Inc | IC RF TXRX+MCU ISM<1GHZ 85-VFLGA | 下载 |
SI1032R | Vishay(威世) | N-Channel 20-V (D-S) MOSFET | 下载 |
SI1032R-E3 | Vishay(威世) | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 下载 |
SI1032R-T1 | Vishay(威世) | MOSFET 20V 0.2A | 下载 |
SI1032R-T1-E3 | Vishay(威世) | MOSFET 20V 0.2A | 下载 |
SI1032R-T1-GE3 | Vishay(威世) | 漏源电压(Vdss):20V 连续漏极电流(Id)(25°C 时):140mA 栅源极阈值电压:1.2V @ 250uA 漏源导通电阻:5Ω @ 200mA,4.5V 最大功率耗散(Ta=25°C):250mW 类型:N沟道 N沟道,20V,140mA,10Ω@1.5V | 下载 |
SI1032R_08 | Vishay(威世) | VISHAY SILICONIX - SI1032R-T1-GE3 - N CHANNEL MOSFET; 20V; 140mA SC-75A; FULL REEL | 下载 |
SI1032R_10 | Vishay(威世) | N-Channel 1.5 V (G-S) MOSFET | 下载 |
SI1032X | Vishay(威世) | VISHAY SILICONIX - SI1032R-T1-GE3 - N CHANNEL MOSFET; 20V; 140mA SC-75A; FULL REEL | 下载 |
SI1032X-E3 | Vishay(威世) | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
SI1032X-T1 | Vishay(威世) | N-Channel 20-V (D-S) MOSFET | 下载 |
SI1032X-T1-E3 | Vishay(威世) | —— | 下载 |
SI1032X-T1-GE3 | Vishay(威世) | MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V | 下载 |
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