器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRF9610 | ETC2 | SEMICONDUCTORS | 下载 |
IRF9610 | SAMSUNG(三星) | Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
IRF9610 | Thomson Consumer Electronics | Transistor | 下载 |
IRF9610 | Vishay(威世) | MOSFET P-Chan 200V 1.8 Amp | 下载 |
IRF9610 | International Rectifier ( Infineon ) | 1.8A, 200V, 3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF9610-001 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 下载 |
IRF9610-001 | Vishay(威世) | Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 下载 |
IRF9610-001PBF | Vishay(威世) | Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | 下载 |
IRF9610-001PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 下载 |
IRF9610-002 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-002 | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-002PBF | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF9610-002PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-003 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-003 | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-003PBF | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF9610-003PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-004 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-004 | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-004PBF | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF9610-004PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-005 | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-005 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-005PBF | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF9610-005PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-006 | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-006 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-006PBF | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF9610-006PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF9610-007 | Vishay(威世) | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
IRF9610F 、 IRF9610F 、 IRF9610FPBF 、 IRF9610FPBF 、 IRF9610FX 、 IRF9610FX 、 IRF9610FXPBF 、 IRF9610FXPBF | 下载文档 |
IRF9610-009 、 IRF9610-009 、 IRF9610-009PBF 、 IRF9610-009PBF | 下载文档 |
IRF9610-001 、 IRF9610-001 、 IRF9610-001PBF 、 IRF9610-001PBF | 下载文档 |
IRF9610PBF | 下载文档 |
IRF9610S | 下载文档 |
IRF9610S | 下载文档 |
IRF9610SPBF | 下载文档 |
IRF9610SPBF | 下载文档 |
IRF9610PBF | 下载文档 |
IRF9610L | 下载文档 |
型号 | IRF9610F | IRF9610F | IRF9610FPBF | IRF9610FPBF | IRF9610FX | IRF9610FX | IRF9610FXPBF | IRF9610FXPBF |
---|---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, |
是否无铅 | 含铅 | 含铅 | 不含铅 | 不含铅 | 含铅 | 含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 不符合 | 不符合 | 符合 | 符合 | 不符合 | 不符合 | 符合 | 符合 |
厂商名称 | International Rectifier ( Infineon ) | Vishay(威世) | International Rectifier ( Infineon ) | Vishay(威世) | International Rectifier ( Infineon ) | Vishay(威世) | International Rectifier ( Infineon ) | Vishay(威世) |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
最大漏源导通电阻 | 3 Ω | 3 Ω | 3 Ω | 3 Ω | 3 Ω | 3 Ω | 3 Ω | 3 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | 225 | NOT SPECIFIED | 250 | NOT SPECIFIED | 225 | NOT SPECIFIED | 250 | NOT SPECIFIED |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 30 | NOT SPECIFIED | 30 | NOT SPECIFIED | 30 | NOT SPECIFIED | 30 | NOT SPECIFIED |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
热搜器件
技术资料推荐
论坛推荐
技术视频推荐
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2023 EEWORLD.com.cn, Inc. All rights reserved