器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRF610 | ETC2 | SEMICONDUCTORS | 下载 |
IRF610 | ISC | isc N-Channel MOSFET Transistor | 下载 |
IRF610 | Advanced Microelectronic Products Inc | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
IRF610 | Texas Instruments(德州仪器) | IRF610 | 下载 |
IRF610 | Microsemi | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | 下载 |
IRF610 | Motorola ( NXP ) | 2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF610 | Renesas(瑞萨电子) | 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF610 | Rochester Electronics | 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF610 | Vishay(威世) | Standard Circular Connector STD CABLE CLAMP 17 | 下载 |
IRF610 | New Jersey Semiconductor | 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF610 | - | N-Channel Power Mosfets | 下载 |
IRF610 | Fairchild | 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF610 | Intersil ( Renesas ) | 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF610-001 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 下载 |
IRF610-001 | Vishay(威世) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 下载 |
IRF610-001PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 下载 |
IRF610-001PBF | Vishay(威世) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 下载 |
IRF610-002 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF610-002 | Vishay(威世) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF610-002PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF610-002PBF | Vishay(威世) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF610-003 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF610-003 | Vishay(威世) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF610-003PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF610-003PBF | Vishay(威世) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF610-004 | Vishay(威世) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF610-004 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF610-004PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF610-004PBF | Vishay(威世) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF610-005 | Vishay(威世) | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
IRF61016 、 IRF610A 、 IRF610A16A 、 IRF610AF 、 IRF610AJ | 下载文档 |
IRF610-001 、 IRF610-001 、 IRF610-001PBF 、 IRF610-001PBF | 下载文档 |
IRF610-009 、 IRF610-009 、 IRF610-009PBF 、 IRF610-009PBF | 下载文档 |
IRF610-007 、 IRF610-007 、 IRF610-007PBF 、 IRF610-007PBF | 下载文档 |
IRF610 、 IRF610-613 | 下载文档 |
IRF610 | 下载文档 |
IRF610_R4941 | 下载文档 |
IRF6100TR | 下载文档 |
IRF6100PBF | 下载文档 |
IRF610A | 下载文档 |
型号 | IRF61016 | IRF610A | IRF610A16A | IRF610AF | IRF610AJ |
---|---|---|---|---|---|
描述 | 2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 2.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V |
最大漏极电流 (ID) | 2.5 A | 2.5 A | 2.5 A | 2.5 A | 2.5 A |
最大漏源导通电阻 | 1.5 Ω | 1.5 Ω | 1.5 Ω | 1.5 Ω | 1.5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
功耗环境最大值 | 20 W | 20 W | 20 W | 20 W | 20 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
厂商名称 | - | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
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