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IRF3205

eeworld网站中关于IRF3205有119个元器件。有IRF3205、IRF3205等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
IRF3205 ISC isc N-Channel Mosfet Transistor 下载
IRF3205 Thinki Semiconductor Co.,Ltd. POWER, FET 下载
IRF3205 Nell POWER, FET 下载
IRF3205 Kersemi Electronic POWER, FET 下载
IRF3205 - HEXFET Power MOSFET 下载
IRF3205 International Rectifier ( Infineon ) POWER, FET 下载
IRF3205-002 International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-002 Infineon(英飞凌) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF3205-002PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-002PBF Infineon(英飞凌) 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF3205-003 Infineon(英飞凌) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF3205-003 International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-003PBF Infineon(英飞凌) 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF3205-003PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-006 Infineon(英飞凌) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF3205-006 International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-006PBF Infineon(英飞凌) 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF3205-006PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-007 International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-007PBF Infineon(英飞凌) 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF3205-007PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-009 International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-009 Infineon(英飞凌) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF3205-009PBF Infineon(英飞凌) 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF3205-009PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-010 Infineon(英飞凌) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
IRF3205-010 International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-010PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
IRF3205-010PBF Infineon(英飞凌) 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
IRF3205-011 Infineon(英飞凌) Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 下载
关于IRF3205相关文档资料:
对应元器件 pdf文档资料下载
IRF3205Z 、 IRF3205ZL 、 IRF3205ZPBF 、 IRF3205ZS 、 IRF3205ZSTRL 下载文档
IRF3205 、 IRF3205Z 、 IRF3205ZL 、 IRF3205ZS 下载文档
IRF3205Z 、 IRF3205ZL 、 IRF3205ZLPBF 下载文档
IRF3205L 、 IRF3205S 、 IRF3205STRLPBF 下载文档
IRF3205SPBF 、 IRF3205STRRPBF 下载文档
IRF3205L 、 IRF3205STRR 下载文档
IRF3205LPBF 、 IRF3205STRRPBF 下载文档
IRF3205ZLPbF 、 IRF3205ZSPbF 下载文档
IRF3205-007PBF 下载文档
IRF3205 下载文档
IRF3205资料比对:
型号 IRF3205Z IRF3205ZL IRF3205ZPBF IRF3205ZS IRF3205ZSTRL
描述 MOSFET N-CH 55V 75A TO-220AB MOSFET N-CH 55V 75A TO-262 漏源电压(Vdss):55V 连续漏极电流(Id)(25°C 时):75A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:6.5mΩ @ 66A,10V 最大功率耗散(Ta=25°C):170W 类型:N沟道 N沟道,55V,75A,6.5mΩ@10V MOSFET N-CH 55V 75A D2PAK mosfet N-CH 55v 75a d2pak
是否Rohs认证 不符合 不符合 符合 不符合 -
厂商名称 Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) -
包装说明 PLASTIC PACKAGE-3 PLASTIC, TO-262, 3 PIN FLANGE MOUNT, R-PSFM-T3 PLASTIC, D2PAK-3 -
Reach Compliance Code compliant not_compliant compliant not_compliant -
其他特性 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE -
雪崩能效等级(Eas) 250 mJ 250 mJ 250 mJ 250 mJ -
外壳连接 DRAIN DRAIN DRAIN DRAIN -
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
最小漏源击穿电压 55 V 55 V 55 V 55 V -
最大漏极电流 (ID) 75 A 75 A 75 A 75 A -
最大漏源导通电阻 0.0065 Ω 0.0065 Ω 0.0065 Ω 0.0065 Ω -
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95代码 TO-220AB TO-262AA TO-220AB TO-263AB -
JESD-30 代码 R-PSFM-T3 R-PSIP-T3 R-PSFM-T3 R-PSSO-G2 -
元件数量 1 1 1 1 -
端子数量 3 3 3 2 -
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 FLANGE MOUNT IN-LINE FLANGE MOUNT SMALL OUTLINE -
峰值回流温度(摄氏度) NOT SPECIFIED 225 NOT SPECIFIED 225 -
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
最大脉冲漏极电流 (IDM) 440 A 440 A 440 A 440 A -
表面贴装 NO NO NO YES -
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING -
端子位置 SINGLE SINGLE SINGLE SINGLE -
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 NOT SPECIFIED 30 -
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING -
晶体管元件材料 SILICON SILICON SILICON SILICON -
ECCN代码 - EAR99 EAR99 EAR99 -
JESD-609代码 - e0 e3 e0 -
认证状态 - Not Qualified Not Qualified Not Qualified -
端子面层 - Tin/Lead (Sn/Pb) Matte Tin (Sn) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) -
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