器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IRF3205 | ISC | isc N-Channel Mosfet Transistor | 下载 |
IRF3205 | Thinki Semiconductor Co.,Ltd. | POWER, FET | 下载 |
IRF3205 | Nell | POWER, FET | 下载 |
IRF3205 | Kersemi Electronic | POWER, FET | 下载 |
IRF3205 | - | HEXFET Power MOSFET | 下载 |
IRF3205 | International Rectifier ( Infineon ) | POWER, FET | 下载 |
IRF3205-002 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-002 | Infineon(英飞凌) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF3205-002PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-002PBF | Infineon(英飞凌) | 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF3205-003 | Infineon(英飞凌) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF3205-003 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-003PBF | Infineon(英飞凌) | 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF3205-003PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-006 | Infineon(英飞凌) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF3205-006 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-006PBF | Infineon(英飞凌) | 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF3205-006PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-007 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-007PBF | Infineon(英飞凌) | 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF3205-007PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-009 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-009 | Infineon(英飞凌) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF3205-009PBF | Infineon(英飞凌) | 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF3205-009PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-010 | Infineon(英飞凌) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
IRF3205-010 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-010PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 下载 |
IRF3205-010PBF | Infineon(英飞凌) | 98A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
IRF3205-011 | Infineon(英飞凌) | Power Field-Effect Transistor, 98A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 下载 |
对应元器件 | pdf文档资料下载 |
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IRF3205Z 、 IRF3205ZL 、 IRF3205ZPBF 、 IRF3205ZS 、 IRF3205ZSTRL | 下载文档 |
IRF3205 、 IRF3205Z 、 IRF3205ZL 、 IRF3205ZS | 下载文档 |
IRF3205Z 、 IRF3205ZL 、 IRF3205ZLPBF | 下载文档 |
IRF3205L 、 IRF3205S 、 IRF3205STRLPBF | 下载文档 |
IRF3205SPBF 、 IRF3205STRRPBF | 下载文档 |
IRF3205L 、 IRF3205STRR | 下载文档 |
IRF3205LPBF 、 IRF3205STRRPBF | 下载文档 |
IRF3205ZLPbF 、 IRF3205ZSPbF | 下载文档 |
IRF3205-007PBF | 下载文档 |
IRF3205 | 下载文档 |
型号 | IRF3205Z | IRF3205ZL | IRF3205ZPBF | IRF3205ZS | IRF3205ZSTRL |
---|---|---|---|---|---|
描述 | MOSFET N-CH 55V 75A TO-220AB | MOSFET N-CH 55V 75A TO-262 | 漏源电压(Vdss):55V 连续漏极电流(Id)(25°C 时):75A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:6.5mΩ @ 66A,10V 最大功率耗散(Ta=25°C):170W 类型:N沟道 N沟道,55V,75A,6.5mΩ@10V | MOSFET N-CH 55V 75A D2PAK | mosfet N-CH 55v 75a d2pak |
是否Rohs认证 | 不符合 | 不符合 | 符合 | 不符合 | - |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | - |
包装说明 | PLASTIC PACKAGE-3 | PLASTIC, TO-262, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | PLASTIC, D2PAK-3 | - |
Reach Compliance Code | compliant | not_compliant | compliant | not_compliant | - |
其他特性 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - |
雪崩能效等级(Eas) | 250 mJ | 250 mJ | 250 mJ | 250 mJ | - |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | - |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V | - |
最大漏极电流 (ID) | 75 A | 75 A | 75 A | 75 A | - |
最大漏源导通电阻 | 0.0065 Ω | 0.0065 Ω | 0.0065 Ω | 0.0065 Ω | - |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
JEDEC-95代码 | TO-220AB | TO-262AA | TO-220AB | TO-263AB | - |
JESD-30 代码 | R-PSFM-T3 | R-PSIP-T3 | R-PSFM-T3 | R-PSSO-G2 | - |
元件数量 | 1 | 1 | 1 | 1 | - |
端子数量 | 3 | 3 | 3 | 2 | - |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
封装形式 | FLANGE MOUNT | IN-LINE | FLANGE MOUNT | SMALL OUTLINE | - |
峰值回流温度(摄氏度) | NOT SPECIFIED | 225 | NOT SPECIFIED | 225 | - |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
最大脉冲漏极电流 (IDM) | 440 A | 440 A | 440 A | 440 A | - |
表面贴装 | NO | NO | NO | YES | - |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | - |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | - |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | NOT SPECIFIED | 30 | - |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | - |
ECCN代码 | - | EAR99 | EAR99 | EAR99 | - |
JESD-609代码 | - | e0 | e3 | e0 | - |
认证状态 | - | Not Qualified | Not Qualified | Not Qualified | - |
端子面层 | - | Tin/Lead (Sn/Pb) | Matte Tin (Sn) - with Nickel (Ni) barrier | Tin/Lead (Sn/Pb) | - |
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