器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
FDS6680A | Rochester Electronics | 12500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SO-8 | 下载 |
FDS6680A | ON Semiconductor(安森美) | 漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):12.5A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:9.5mΩ @ 12.5A,10V 最大功率耗散(Ta=25°C):2.5W 类型:N沟道 | 下载 |
FDS6680A | Fairchild | Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.1uF X7R 10% | 下载 |
FDS6680A-NBBI005A | Fairchild | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
FDS6680A_12 | Fairchild | Single N-Channel, Logic Level, PowerTrench® MOSFET | 下载 |
FDS6680A_NL | Fairchild | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | 下载 |
FDS6680A_Q | Fairchild | MOSFET SO-8 SGL N-CH 30V | 下载 |
FDS6680AD84Z | Fairchild | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | 下载 |
FDS6680AF011 | Fairchild | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | 下载 |
FDS6680AL86Z | Fairchild | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | 下载 |
FDS6680AS | Rochester Electronics | 11500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | 下载 |
FDS6680AS | ON Semiconductor(安森美) | 漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):11.5A 栅源极阈值电压:3V @ 1mA 漏源导通电阻:10mΩ @ 11.5A,10V 最大功率耗散(Ta=25°C):2.5W 类型:N沟道 | 下载 |
FDS6680AS | Fairchild | 8-bit Microcontrollers - MCU 14KB FL 1KBRAM 32MHz 12I/0 Enhanced Mid | 下载 |
FDS6680AS62Z | Fairchild | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | 下载 |
FDS6680AS_08 | Fairchild | 11500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 下载 |
FDS6680AS_NL | Fairchild | 11500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
FDS6680AD84Z 、 FDS6680AF011 、 FDS6680AL86Z | 下载文档 |
FDS6680AS | 下载文档 |
FDS6680AS | 下载文档 |
FDS6680AS | 下载文档 |
FDS6680AS62Z | 下载文档 |
FDS6680AS_NL | 下载文档 |
FDS6680AS_08 | 下载文档 |
FDS6680A_Q | 下载文档 |
FDS6680A | 下载文档 |
FDS6680A | 下载文档 |
型号 | FDS6680AD84Z | FDS6680AF011 | FDS6680AL86Z |
---|---|---|---|
描述 | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 |
厂商名称 | Fairchild | Fairchild | Fairchild |
零件包装代码 | SOT | SOT | SOT |
包装说明 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
针数 | 8 | 8 | 8 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 30 V | 30 V | 30 V |
最大漏极电流 (ID) | 12.5 A | 12.5 A | 12.5 A |
最大漏源导通电阻 | 0.0095 Ω | 0.0095 Ω | 0.0095 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
元件数量 | 1 | 1 | 1 |
端子数量 | 8 | 8 | 8 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
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