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2SC2712-GR

eeworld网站中关于2SC2712-GR有43个元器件。有2SC2712-GR、2SC2712-GR等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
2SC2712-GR 蓝箭(BLUE ROCKET) 额定功率:150mW 集电极电流Ic:150mA 集射极击穿电压Vce:50V 晶体管类型:NPN 下载
2SC2712-GR Toshiba(东芝) Bipolar Transistors - BJT 下载
2SC2712-GR MCC 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 下载
2SC2712-GR Micro Commercial Components (MCC) Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 下载
2SC2712-GR SECOS Small Signal Bipolar Transistor 下载
2SC2712-GR(5LHMD,F Toshiba(东芝) Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 下载
2SC2712-GR(F) Toshiba(东芝) 150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR 下载
2SC2712-GR(T5L,F,T Toshiba(东芝) 双极小信号 x34 small signal transistor 下载
2SC2712-GR(T5L,F,T) Toshiba(东芝) TRANS NPN 50V 150MA S-MINI 下载
2SC2712-GR(T5LFT) Toshiba(东芝) Small Signal Bipolar Transistor 下载
2SC2712-GR(T5LHITF Toshiba(东芝) Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 下载
2SC2712-GR(T5LHO,F Toshiba(东芝) Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 下载
2SC2712-GR(T5LMATF Toshiba(东芝) Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 下载
2SC2712-GR(T5LPASF Toshiba(东芝) Small Signal Bipolar Transistor 下载
2SC2712-GR(T5LPEWF Toshiba(东芝) Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 下载
2SC2712-GR(T5LPP,F Toshiba(东芝) Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 下载
2SC2712-GR(T5LTYDF Toshiba(东芝) Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 下载
2SC2712-GR(TE85L,F Toshiba(东芝) transistors bipolar - bjt 150ma 50v 下载
2SC2712-GR(TLSPFT) Toshiba(东芝) TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-23 下载
2SC2712-GR,LF Toshiba(东芝) TRANS NPN 50V 0.15A S-MINI 下载
2SC2712-GR,LF(B Toshiba(东芝) Small Signal Bipolar Transistor 下载
2SC2712-GR,LF(T Toshiba(东芝) 额定功率:150mW 集电极电流Ic:150mA 集射极击穿电压Vce:50V 晶体管类型:NPN NPN,Vceo=50V,Ic=150mA 下载
2SC2712-GR-C SECOS Small Signal Bipolar Transistor 下载
2SC2712-GR-T Micro Commercial Components (MCC) Transistor 下载
2SC2712-GR-TP Micro Commercial Components (MCC) Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 下载
2SC2712-GR-TP-HF Micro Commercial Components (MCC) Small Signal Bipolar Transistor, 0.15A I(C), NPN, 下载
2SC2712-GRLF Toshiba(东芝) Bipolar Transistors - BJT Transistor Lo Freq 0.15A 50V 下载
2SC2712-GRTE85L Toshiba(东芝) TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal 下载
2SC2712-GRTE85LF Toshiba(东芝) Bipolar Transistors - BJT 150mA 50V 下载
2SC2712-GRTE85R Toshiba(东芝) TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal 下载
关于2SC2712-GR相关文档资料:
对应元器件 pdf文档资料下载
2SC2712-GR(T5L,F,T) 、 2SC2712-GRTE85L 、 2SC2712-GRTE85R 、 2SC2712GRTE85R 下载文档
2SC2712-GR-TP 、 2SC2712-GR-TP-HF 下载文档
2SC2712-GRTE85LF 、 2SC2712GRT5LFT 下载文档
2SC2712-GR 、 2SC2712-GRLF 下载文档
2SC2712-GR 、 2SC2712-GR-C 下载文档
2SC2712GR 下载文档
2SC2712GR 下载文档
2SC2712GR 下载文档
2SC2712GR 下载文档
2SC2712GR 下载文档
2SC2712-GR资料比对:
型号 2SC2712-GR(T5L,F,T) 2SC2712-GRTE85L 2SC2712-GRTE85R 2SC2712GRTE85R
描述 TRANS NPN 50V 150MA S-MINI TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow unknow unknow
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE
最大集电极电流 (IC) 0.15 A 0.15 A 0.15 A 0.15 A
基于收集器的最大容量 3.5 pF 3.5 pF 3.5 pF 3.5 pF
集电极-发射极最大电压 50 V 50 V 50 V 50 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 200 200 200 200
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 125 °C 125 °C 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN
表面贴装 YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 80 MHz 80 MHz 80 MHz 80 MHz
VCEsat-Max 0.25 V 0.25 V 0.25 V 0.25 V
Base Number Matches 1 1 1 1
认证状态 - Not Qualified Not Qualified Not Qualified
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