器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
2SC2712-GR | 蓝箭(BLUE ROCKET) | 额定功率:150mW 集电极电流Ic:150mA 集射极击穿电压Vce:50V 晶体管类型:NPN | 下载 |
2SC2712-GR | Toshiba(东芝) | Bipolar Transistors - BJT | 下载 |
2SC2712-GR | MCC | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 | 下载 |
2SC2712-GR | Micro Commercial Components (MCC) | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 | 下载 |
2SC2712-GR | SECOS | Small Signal Bipolar Transistor | 下载 |
2SC2712-GR(5LHMD,F | Toshiba(东芝) | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 下载 |
2SC2712-GR(F) | Toshiba(东芝) | 150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | 下载 |
2SC2712-GR(T5L,F,T | Toshiba(东芝) | 双极小信号 x34 small signal transistor | 下载 |
2SC2712-GR(T5L,F,T) | Toshiba(东芝) | TRANS NPN 50V 150MA S-MINI | 下载 |
2SC2712-GR(T5LFT) | Toshiba(东芝) | Small Signal Bipolar Transistor | 下载 |
2SC2712-GR(T5LHITF | Toshiba(东芝) | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 下载 |
2SC2712-GR(T5LHO,F | Toshiba(东芝) | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 下载 |
2SC2712-GR(T5LMATF | Toshiba(东芝) | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 下载 |
2SC2712-GR(T5LPASF | Toshiba(东芝) | Small Signal Bipolar Transistor | 下载 |
2SC2712-GR(T5LPEWF | Toshiba(东芝) | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 下载 |
2SC2712-GR(T5LPP,F | Toshiba(东芝) | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 下载 |
2SC2712-GR(T5LTYDF | Toshiba(东芝) | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 下载 |
2SC2712-GR(TE85L,F | Toshiba(东芝) | transistors bipolar - bjt 150ma 50v | 下载 |
2SC2712-GR(TLSPFT) | Toshiba(东芝) | TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-23 | 下载 |
2SC2712-GR,LF | Toshiba(东芝) | TRANS NPN 50V 0.15A S-MINI | 下载 |
2SC2712-GR,LF(B | Toshiba(东芝) | Small Signal Bipolar Transistor | 下载 |
2SC2712-GR,LF(T | Toshiba(东芝) | 额定功率:150mW 集电极电流Ic:150mA 集射极击穿电压Vce:50V 晶体管类型:NPN NPN,Vceo=50V,Ic=150mA | 下载 |
2SC2712-GR-C | SECOS | Small Signal Bipolar Transistor | 下载 |
2SC2712-GR-T | Micro Commercial Components (MCC) | Transistor | 下载 |
2SC2712-GR-TP | Micro Commercial Components (MCC) | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 下载 |
2SC2712-GR-TP-HF | Micro Commercial Components (MCC) | Small Signal Bipolar Transistor, 0.15A I(C), NPN, | 下载 |
2SC2712-GRLF | Toshiba(东芝) | Bipolar Transistors - BJT Transistor Lo Freq 0.15A 50V | 下载 |
2SC2712-GRTE85L | Toshiba(东芝) | TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 下载 |
2SC2712-GRTE85LF | Toshiba(东芝) | Bipolar Transistors - BJT 150mA 50V | 下载 |
2SC2712-GRTE85R | Toshiba(东芝) | TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
2SC2712-GR(T5L,F,T) 、 2SC2712-GRTE85L 、 2SC2712-GRTE85R 、 2SC2712GRTE85R | 下载文档 |
2SC2712-GR-TP 、 2SC2712-GR-TP-HF | 下载文档 |
2SC2712-GRTE85LF 、 2SC2712GRT5LFT | 下载文档 |
2SC2712-GR 、 2SC2712-GRLF | 下载文档 |
2SC2712-GR 、 2SC2712-GR-C | 下载文档 |
2SC2712GR | 下载文档 |
2SC2712GR | 下载文档 |
2SC2712GR | 下载文档 |
2SC2712GR | 下载文档 |
2SC2712GR | 下载文档 |
型号 | 2SC2712-GR(T5L,F,T) | 2SC2712-GRTE85L | 2SC2712-GRTE85R | 2SC2712GRTE85R |
---|---|---|---|---|
描述 | TRANS NPN 50V 150MA S-MINI | TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow | unknow | unknow | unknow |
其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
最大集电极电流 (IC) | 0.15 A | 0.15 A | 0.15 A | 0.15 A |
基于收集器的最大容量 | 3.5 pF | 3.5 pF | 3.5 pF | 3.5 pF |
集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 200 | 200 | 200 | 200 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | NPN | NPN | NPN | NPN |
表面贴装 | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 80 MHz | 80 MHz | 80 MHz | 80 MHz |
VCEsat-Max | 0.25 V | 0.25 V | 0.25 V | 0.25 V |
Base Number Matches | 1 | 1 | 1 | 1 |
认证状态 | - | Not Qualified | Not Qualified | Not Qualified |
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