器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
2SB688 | Inchange Semiconductor | Bipolar Transistors;PNP;-8A;-120V;TO-3PN | 下载 |
2SB688 | 长电科技(JCET) | PNP晶体管 | 下载 |
2SB688 | JSMC | Power Amplifier Applications | 下载 |
2SB688 | - | TO-3P Plastic-Encapsulate Transistors | 下载 |
2SB688 | Wing Shing Computer Components Co., (H.K.)Ltd. | pnp planar silicon transistor(audio power amplifier DC TO DC converter) | 下载 |
2SB688 | Toshiba(东芝) | TRANSISTOR 8 A, 120 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | 下载 |
2SB688 | Jinmei | Silicon PNP Power Transistors | 下载 |
2SB688 | SAVANTIC | Silicon PNP Power Transistors | 下载 |
2SB688 | ISC | Silicon PNP Power Transistors | 下载 |
2SB688 | New Jersey Semiconductor | Silicon PNP Power Transistor | 下载 |
2SB688 | UNISONIC TECHNOLOGIES CO.,LTD | HIGH POWER AMPLIFIER APPLICATION | 下载 |
2SB688 | MOSPEC | POWER TRANSISTORS(8A,120V,80W) | 下载 |
2SB688-O-AB-N-B | JSMC | Power Amplifier Applications | 下载 |
2SB688-O-W-N-B | JSMC | Power Amplifier Applications | 下载 |
2SB688_15 | Jinmei | Silicon PNP Power Transistors | 下载 |
2SB688_15 | UNISONIC TECHNOLOGIES CO.,LTD | HIGH POWER AMPLIFIER APPLICATION | 下载 |
2SB688_15 | Quanzhou Jinmei Electronic Co.,Ltd. | Silicon PNP Power Transistors | 下载 |
2SB688_2014 | Quanzhou Jinmei Electronic Co.,Ltd. | Silicon PNP Power Transistors | 下载 |
2SB688_2014 | Jinmei | Silicon PNP Power Transistors | 下载 |
2SB688A-O-AB-N-B | JSMC | Power Amplifier Applications | 下载 |
2SB688A-O-W-N-B | JSMC | Power Amplifier Applications | 下载 |
2SB688B-O-AB-N-B | JSMC | Power Amplifier Applications | 下载 |
2SB688B-O-W-N-B | JSMC | Power Amplifier Applications | 下载 |
2SB688C-O-AB-N-B | JSMC | Power Amplifier Applications | 下载 |
2SB688C-O-W-N-B | JSMC | Power Amplifier Applications | 下载 |
2SB688L | UNISONIC TECHNOLOGIES CO.,LTD | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3P, 3 PIN | 下载 |
2SB688LO | UNISONIC TECHNOLOGIES CO.,LTD | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3P, 3 PIN | 下载 |
2SB688LR | UNISONIC TECHNOLOGIES CO.,LTD | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3P, 3 PIN | 下载 |
2SB688O | Inchange Semiconductor | Transistor | 下载 |
2SB688O | MOSPEC | Transistor | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
2SB688L 、 2SB688LO 、 2SB688LR 、 2SB688O 、 2SB688R | 下载文档 |
2SB688 、 2SB688O 、 2SB688R | 下载文档 |
2SB688_15 、 2SB688_2014 | 下载文档 |
2SB688O 、 2SB688R | 下载文档 |
2SB688O 、 2SB688R | 下载文档 |
2SB688_15 | 下载文档 |
2SB688 | 下载文档 |
2SB688 | 下载文档 |
2SB688 | 下载文档 |
2SB688 | 下载文档 |
型号 | 2SB688L | 2SB688LO | 2SB688LR | 2SB688O | 2SB688R |
---|---|---|---|---|---|
描述 | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3P, 3 PIN | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3P, 3 PIN | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3P, 3 PIN | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN |
是否Rohs认证 | 符合 | 符合 | 符合 | 不符合 | 不符合 |
零件包装代码 | TO-3P | TO-3P | TO-3P | TO-3P | TO-3P |
包装说明 | LEAD FREE, TO-3P, 3 PIN | LEAD FREE, TO-3P, 3 PIN | LEAD FREE, TO-3P, 3 PIN | TO-3P, 3 PIN | TO-3P, 3 PIN |
针数 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | compli | compli | compli | compli | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 10 A | 10 A | 10 A | 10 A | 10 A |
集电极-发射极最大电压 | 120 V | 120 V | 120 V | 120 V | 120 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 55 | 80 | 55 | 80 | 55 |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 |
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