器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
2N7000 | ISC | Isc N-Channel MOSFET Transistor | 下载 |
2N7000 | GE | DMOS Transistors (N-Channel) | 下载 |
2N7000 | CDIL[Continental Device India Pvt. Ltd.] | Small Signal Field-Effect Transistor, | 下载 |
2N7000 | TDK(株式会社) | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 下载 |
2N7000 | Inchange Semiconductor | MOSFETs;0.2A;60V;TO-92 | 下载 |
2N7000 | MCC | N-Channel MOSFET | 下载 |
2N7000 | - | MOSFET (N-Channel) | 下载 |
2N7000 | Philips Semiconductors (NXP Semiconductors N.V.) | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 下载 |
2N7000 | SECELECTRONICS | N-Channel Enhancement Mode Power MOSFET | 下载 |
2N7000 | KEXIN | N-Channel Enhancement Mode MOSFET | 下载 |
2N7000 | ON Semiconductor(安森美) | 漏源电压(Vdss):60V 连续漏极电流(Id)(25°C 时):200mA 栅源极阈值电压:3V @ 1mA 漏源导通电阻:5Ω @ 500mA,10V 最大功率耗散(Ta=25°C):400mW 类型:N沟道 N沟道,60V,200mA | 下载 |
2N7000 | 长电科技(JCET) | 漏源电压(Vdss):60V 连续漏极电流(Id)(25°C 时):200mA 栅源极阈值电压:3V @ 1mA 漏源导通电阻:5Ω @ 500mA,10V 最大功率耗散(Ta=25°C):400mW 类型:N沟道 N沟道,60V,0.2A,6Ω@4.5V | 下载 |
2N7000 | Vishay(威世) | MOSFET 60V 0.2A 0.4W | 下载 |
2N7000 | ST(意法半导体) | MOSFET N-Ch 60 Volt 0.35 A | 下载 |
2N7000 | Teledyne Technologies Incorporated | Small Signal Field-Effect Transistor, 0.21A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA | 下载 |
2N7000 | Rochester Electronics | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, TO-92, 3 PIN | 下载 |
2N7000 | Diodes | MOSFET | 下载 |
2N7000 | Microchip(微芯科技) | MOSFET 60V 5Ohm | 下载 |
2N7000 | Fairchild | Diodes - General Purpose, Power, Switching 100V Io/200mA BULK | 下载 |
2N7000 | Transys Electronics Limited | N-channel-enhancement | 下载 |
2N7000 | All Sensors | N-channel-enhancement | 下载 |
2N7000 | NXP(恩智浦) | N-channel enhancement mode vertical D-mos transistor | 下载 |
2N7000 | Supertex | mosfet 小信号 60v 5ohm | 下载 |
2N7000 | DIOTEC | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 下载 |
2N7000 | KEC | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 下载 |
2N7000 | National Semiconductor(TI ) | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 下载 |
2N7000 | SAMSUNG(三星) | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 下载 |
2N7000 | Weitron Technology | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 下载 |
2N7000 | SECOS | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 下载 |
2N7000 | DCCOM [ DC COMPONENTS ] | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 下载 |
对应元器件 | pdf文档资料下载 |
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2N7000/D28Z 、 2N7000/D29Z 、 2N7000/D81Z 、 2N7000/D89Z 、 2N7000/D10Z 、 2N7000/D11Z | 下载文档 |
2N7000-G 、 2N7000-G P002 、 2N7000-G P003 、 2N7000-G P005 、 2N7000-G P013 、 2N7000-G P014 | 下载文档 |
2N7000-D74Z 、 2N7000-D75Z 、 2N7000-G 、 2N7000_D26Z_Q 、 2N7000_Q 、 2N7000BU | 下载文档 |
2N7000/D26Z 、 2N7000/D27Z 、 2N7000/D74Z 、 2N7000/D75Z 、 2N7000/J05Z 、 2N7000/J18Z | 下载文档 |
2N7000 、 2N7000-G P005 、 2N7000-G P013 、 2N7000-G-P002 | 下载文档 |
2N7000_D26Z 、 2N7000_D74Z 、 2N7000_D75Z 、 2N7000_J61Z | 下载文档 |
2N7000 、 2N7000-G 、 2N7000_07 | 下载文档 |
2N7000-AP 、 2N7000-AP-HF 、 2N7000-BP-HF | 下载文档 |
2N7000-T92-B 、 2N7000-T92-K 、 2N7000-T92-R | 下载文档 |
2N7000 AMO 、 2N7000,126 | 下载文档 |
型号 | 2N7000/D10Z | 2N7000/D11Z | 2N7000/D28Z | 2N7000/D29Z | 2N7000/D81Z | 2N7000/D89Z |
---|---|---|---|---|---|---|
描述 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
包装说明 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
最大漏极电流 (ID) | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
最大漏源导通电阻 | 5 Ω | 5 Ω | 5 Ω | 5 Ω | 5 Ω | 5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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