DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8172TB
SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER
FOR WIRELESS TRANSCEIVER
PHASE-OUT
DESCRIPTION
The µPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless
transceiver transmitter stage.
This IC is as same circuit current as conventional µPC8106TB, but operates at higher frequency, higher gain and
lower distortion. Consequently this IC is suitable for mobile communications.
FEATURES
• Recommended operating frequency : fRFout = 0.8 to 2.5 GHz
• Higher IP3 : CG = 9.5 dB TYP., OIP3 = +7.5 dBm TYP. @ fRFout = 0.9 GHz
• High-density surface mounting : 6-pin super minimold package
• Supply voltage : VCC = 2.7 to 3.3 V
APPLICATIONS
• PCS1900M
• 2.4 GHz band transmitter/receiver system (wireless LAN etc.)
ORDERING INFORMATION
Part Number Package Marking Supplying Form
µPC8172TB-E3 6-pin super minimold C3A • Embossed tape 8 mm wide.
• Pin 1, 2, 3 face the tape perforation side.
• Qty 3 kpcs/reel.
Remark To order evaluation samples, please contact your nearby sales office.
(Part number for sample order: µPC8172TB-A)
Caution Electro-static sensitive devices
Document No. P14729EJ2V0DS00 (2nd edition) The mark shows major revised points.
Date Published September 2000 N CP(K)
µPC8172TB
PIN CONNECTIONS
Pin No. Pin Name
(Top View) (Bottom View)
1 IFinput
PHASE-OUTC3A3 4 4 3 2 GND
3 LOinput
2 5 5 2
4 PS
1 6 6 1 5 VCC
6 RFoutput
SERIES PRODUCTS (TA = +25°C, VCC = VRFout = 3.0 V, ZS = ZL = 50 Ω)
ICC fRFout CG (dB)
Part Number (mA) (GHz) @RF 0.9 GHzNote
@RF 1.9 GHz @RF 2.4 GHz
µPC8172TB 9 0.8 to 2.5 9.5 8.5 8.0
µPC8106TB 9 0.4 to 2.0 9 7 −
µPC8109TB 5 0.4 to.2.0 6 4 −
µPC8163TB 16.5 0.8 to 2.0 9 5.5 −
PO(sat) (dBm) OIP3 (dBm)
Part Number 0.9 GHzNote @RF 0.9 GHzNote
@RF @RF 1.9 GHz @RF 2.4 GHz @RF 1.9 GHz @RF 2.4 GHz
µPC8172TB +0.5 0 −0.5 +7.5 +6.0 +4.0
µPC8106TB −2 −4 − +5.5 +2.0 −
µPC8109TB −5.5 −7.5 − +1.5 −1.0 −
µPC8163TB +0.5 −2 − +9.5 +6.0 −
Note fRFout = 0.83 GHz @ µPC8163TB
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
To know the associated product, please refer to each latest data sheet.
BLOCK DIAGRAM (FOR THE µPC8172TB)
(Top View)
LOinput PS
GND VCC
IFinput RFoutput
2 Data Sheet P14729EJ2V0DS00
µPC8172TB
SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM)
Wireless Transceiver
Low Noise Tr.
DEMOD. I
RX Q
PHASE-OUT VCO ÷N PLL
SW
PLL
I
0°
TX Phase
shifter
PA 90°
µPC8172TB
Q
To know the associated products, please refer to each latest data sheet.
Data Sheet P14729EJ2V0DS00 3
µPC8172TB
CONTENTS
1. PIN EXPLANATION .......................................................................................................................... 5
2. ABSOLUTE MAXIMUM RATINGS .................................................................................................. 6
PHASE-OUT3.RECOMMENDEDOPERATING CONDITIONS............................................................................... 6
4. ELECTRICAL CHARACTERISTICS ................................................................................................ 6
5. OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY...................................... 7
6. TEST CIRCUIT .................................................................................................................................. 8
6.1 TEST CIRCUIT 1 (fRFout = 900 MHz).................................................................................... 8
6.2 TEST CIRCUIT 2 (fRFout = 1.9 GHz)..................................................................................... 9
6.3 TEST CIRCUIT 3 (fRFout = 2.4 GHz)..................................................................................... 10
7. TYPICAL CHARACTERISTICS ........................................................................................................ 12
8. PACKAGE DIMENSIONS ................................................................................................................. 24
9. NOTE ON CORRECT USE ............................................................................................................. 25
10. RECOMMENDED SOLDERING CONDITIONS............................................................................... 25
4 Data Sheet P14729EJ2V0DS00
µPC8172TB
1. PIN EXPLANATION
Pin Pin Applied Pin
No. Name Voltage Voltage Function and Explanation Equivalent Circuit
(V) (V)Note
1 IFinput − 1.4 This pin is IF input to double bal-
anced mixer (DBM). The input is
PHASE-OUT designed as high impedance.
The circuit contributes to sup-
press spurious signal. Also this
symmetrical circuit can keep
specified performance insensitive
to process-condition distribution.
For above reason, double bal- 5
anced mixer is adopted. 6
2 GND GND − GND pin. Ground pattern on the 3
board should be formed as wide
as possible. Track Length should
be kept as short as possible to 1
minimize ground impedance.
3 LOinput − 2.3 Local input pin. Recommendable
input level is −10 to 0 dBm.
5 VCC 2.7 to 3.3 − Supply voltage pin. 2
6 RFoutput Same − This pin is RF output from DBM.
bias as This pin is designed as open
VCC collector. Due to the high imped-
through ance output, this pin should be
external externally equipped with LC
inductor matching circuit to next stage.
4 PS VCC/GND − Power save control pin. Bias VCC 5
controls operation as follows.
Pin bias Control
4
VCC Operation
GND Power Save GND 2
Note Each pin voltage is measured with VCC = VPS = VRFout = 3.0 V.
Data Sheet P14729EJ2V0DS00 5
µPC8172TB
2. ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Test Conditions Rating Unit
Supply Voltage VCC TA = +25°C 3.6 V
PS pin Input Voltage VPS TA = +25°C 3.6 V
Power Dissipation of Package PD Mounted on double-side copperclad 50 × 50 × 1.6 270 mW
PHASE-OUT mm epoxy glass PWB
(TA = +85°C)
Operating Ambient Temperature TA −40 to +85 °C
Storage Temperature Tstg −55 to +150 °C
Input Power Pin +10 dBm
3. RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Supply Voltage VCC The same voltage should be applied 2.7 3.0 3.3 V
to pin 5 and 6
Operating Ambient Temperature TA −40 +25 +85 °C
Local Input Level PLOin ZS = 50 Ω (without matching) −10 −5 0 dBm
RF Output Frequency fRFout With external matching circuit 0.8 − 2.5 GHz
IF Input Frequency fIFin 50 − 400 MHz
4. ELECTRICAL CHARACTERISTICS
(TA = +25°C, VCC = VRFout = 3.0 V, fIFin = 240 MHz, PLOin = −5 dBm, and VPS ≥ 2.7 V unless otherwise specified)
Parameter Symbol Test ConditionsNote MIN. TYP. MAX. Unit
Circuit Current ICC No Signal 5.5 9.0 13 mA
Circuit Current In Power Save ICC(PS) VPS = 0 V − − 2 µA
Mode
Conversion Gain CG1 fRFout = 0.9 GHz, PIFin = −30 dBm 6.5 9.5 12.5 dB
CG2 fRFout = 1.9 GHz, PIFin = −30 dBm 5.5 8.5 11.5 dB
CG3 fRFout = 2.4 GHz, PIFin = −30 dBm 5 8.0 11.0 dB
Saturated RF Output Power PO(sat)1 fRFout = 0.9 GHz, PIFin = 0 dBm −2.5 +0.5 − dBm
PO(sat)2 fRFout = 1.9 GHz, PIFin = 0 dBm −3.5 0 − dBm
PO(sat)3 fRFout = 2.4 GHz, PIFin = 0 dBm −4 −0.5 − dBm
Note fRFout < fLoin @ fRFout = 0.9 GHz
fLoin < fRFout @ fRFout = 1.9 GHz/2.4 GHz
6 Data Sheet P14729EJ2V0DS00
µPC8172TB
5. OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25°C, VCC = VRFout = 3.0 V, PLOin = −5 dBm, and VPS ≥ 2.7 V unless otherwise specified)
Parameter Symbol Test ConditionsNote Data Unit
Output Third-Order Distortion OIP31 fRFout = 0.9 GHz +7.5 dBm
Intercept Point OIP32 fRFout = 1.9 GHz fIFin1 = 240 MHz +6.0 dBm
fIFin2 = 241 MHz
PHASE-OUT OIP33 fRFout = 2.4 GHz +4.0 dBm
Input Third-Order Distortion IIP31 fRFout = 0.9 GHz −2.0 dBm
Intercept Point IIP32 fRFout = 1.9 GHz fIFin1 = 240 MHz −2.5 dBm
fIFin2 = 241 MHz
IIP33 fRFout = 2.4 GHz −4.0 dBm
SSB Noise Figure SSB•NF1 fRFout = 0.9 GHz, fIFin = 240 MHz 9.5 dB
SSB•NF2 fRFout = 1.9 GHz, fIFin = 240 MHz 10.4 dB
SSB•NF3 fRFout = 2.4 GHz, fIFin = 240 MHz 10.6 dB
Power Save Rise time TPS(rise) VPS: GND → VCC 1 µs
Response Time Fall time TPS(fall) VPS: VCC → GND 1.5 µs
Note fRFout < fLOin @ fRFout = 0.9 GHz
fLOin < fRFout @ fRFout = 1.9 GHz/2.4 GHz
Data Sheet P14729EJ2V0DS00 7
µPC8172TB
6. TEST CIRCUIT
6.1 TEST CIRCUIT 1 (fRFout = 900 MHz)
Strip Line
Spectrum Analyzer 1 pF 100 pF Signal Generator
100 pF
PHASE-OUT 6 RFoutput IFinput 1
50 Ω C3 C8 L 10 nH C1 50 Ω
5 VCC GND 2
100 pF Signal Generator
1 000 pF 4 PS LOinput 3
C2 50 Ω
VCC C5 C7 C6 C4 1 000 pF
1 µF 68 pF 1 µF
EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD
C4 PS bias
LOinput C2
PS
C5
GND VCC C7
C6
L Voltage Supply
C 8
IFinput C1 C3 RFoutput
µ PC8172TB
COMPONENT LIST
Form Symbol Value (∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad
Chip capacitor C1, C2, C3 100 pF (∗2) Ground pattern on rear of the board
C4 1 000 pF (∗3) Solder plated patterns
C5, C6 1 µF (∗4) : Through holes
C7 68 pF
C8 1 pF
Chip inductor L 10 nHNote
Note 10 nH: LL1608-FH10N (TOKO Co., Ltd.)
8 Data Sheet P14729EJ2V0DS00
µPC8172TB
6.2 TEST CIRCUIT 2 (fRFout = 1.9 GHz)
Strip Line
Spectrum Analyzer 100 pF 100 pF Signal Generator
C3 6 RFoutput IFinput 1
50 Ω 2.75 pF C8 L 470 nH C1 50 Ω
GND
PHASE-OUT 5 VCC 2
100 pF Signal Generator
1 000 pF 4 PS LOinput 3
C2 50 Ω
VCC C5 C7 C6 C4 1 000 pF
1 µF 30 pF 1 µF
EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD
LOinput C2 C4 PS bias
PS
C5
GND L VCC C7
C6
Voltage Supply
IFinput C1 C3 C8 RFoutput
µ PC8172TB
COMPONENT LIST
Form Symbol Value (∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad
Chip capacitor C1, C2, C3 100 pF (∗2) Ground pattern on rear of the board
C4 1 000 pF (∗3) Solder plated patterns
C5, C6 1 µF (∗4) : Through holes
C7 30 pF
C8 2.75 pF
Chip inductor L 470 nHNote
Note 470 nH: LL2012-FR47 (TOKO Co., Ltd.)
Data Sheet P14729EJ2V0DS00 9
µPC8172TB
6.3 TEST CIRCUIT 3 (fRFout = 2.4 GHz)
Strip Line
Spectrum Analyzer 100 pF 100 pF Signal Generator
C3 6 RFoutput IFinput 1
50 Ω 1.75 pF C8 L 470 nH C1 50 Ω
PHASE-OUT 5 VCC GND 2
100 pF Signal Generator
1 000 pF 4 PS LOinput 3
C2 50 Ω
VCC C5 C7 C6 C4 1 000 pF
1 µF 10 pF 1 µF
EXAMPLE OF TEST CIRCUIT 3 ASSEMBLED ON EVALUATION BOARD
LOinput C2 C4 PS bias
PS
C5
GND L VCC C7
C6
Voltage Supply
IFinput C1 C8 C3 RFoutput
µ PC8172TB
COMPONENT LIST
Form Symbol Value (∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad
Chip capacitor C1, C2, C3 100 pF (∗2) Ground pattern on rear of the board
C4 1 000 pF (∗3) Solder plated patterns
C5, C6 1 µF (∗4) : Through holes
C7 10 pF
C8 1.75 pF
Chip inductor L 470 nHNote
Note 470 nH: LL2012-FR47 (TOKO Co., Ltd.)
10 Data Sheet P14729EJ2V0DS00
µPC8172TB
Caution The test circuits and board pattern on data sheet are for performance evaluation use only (They
are not recommended circuits). In the case of actual design-in, matching circuit should be de-
termined using S-parameter of desired frequency in accordance to actual mounting pattern.
PHASE-OUT
Data Sheet P14729EJ2V0DS00 11
µPC8172TB
7. TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C, VCC = VRFout)
CIRCUIT CURRENT vs.
CIRCUIT CURRENT vs. SUPPLY VOLTAGE OPERATING AMBIENT TEMPERATURE
12 12
VCC = 3.3 V
(mA) 10 (mA) 10
TA = +85°C
CurrentT 8 8
ICC ICC VCC = 3.0 V
VCC = 2.7 V
6 Current 6
TA = +25°C
Circuit 4 Circuit 4
(mA)-OU
2 TA = –40°C 2
no signal no signal
0 VCC = VPS 0 VCC = VPS
0 1 2 3 4 –40 –20 0 20 40 60 80
Supply Voltage VCC (V) Operating Ambient Temperature TA (°C)
CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE
12
10
Circuit PHAS CurrentEICC8
6
4
2
VCC = 3.0 V
0 0 1 2 3 4
PS Pin Input Voltage VPS (V)
PS PIN CONTROL RESPONSE TIME
REF LVL = 0 dBm
ATT = 10 dB
10 dB/DIV (Vertical axis)
CENTER = 0.9 GHz
SPAN = 0 Hz
RBW = 3 MHz
VBW = 3 MHz
SWP = 50 µ sec
5 µsec/DIV (Horizontal axis)
12 Data Sheet P14729EJ2V0DS00
µPC8172TB
S-PARAMETERS FOR EACH PORT (VCC = VPS = VRFout = 3.0 V)
(The parameters are monitored at DUT pins)
LO port RF port (without matching)
S11 Z S22 Z
REF 1.0 Units REF 1.0 Units
1 200.0 mUnits/ 1 200.0 mUnits/
21.625 Ω –91.148 Ω hp 71.5 Ω –240.34 Ω
PHASE-OUThp
MARKER 1 MARKER 1
1.15 GHz 900.0 MHz
MARKER 2 MARKER 2
1.65 GHz 1.9 GHz
MARKER 3 MARKER 3
2.15 GHz 2.5 GHz
1
1 2
3
3
2
START 0.400000000 GHz START 0.400000000 GHz
STOP 2.500000000 GHz STOP 2.500000000 GHz
IF port
S11 Z
REF 1.0 Units
1 200.0 mUnits/
hp 332.63 Ω –601.34 Ω
MARKER 1
240.0 MHz
1
START 0.100000000 GHz
STOP 1.000000000 GHz
Data Sheet P14729EJ2V0DS00 13
µPC8172TB
S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) −ON EVALUATION BOARD−
(S22 data are monitored at RF connector on board)
900 MHz (matched in test circuit 1) 1.9 GHz (matched in test circuit 2)
S22 Z S22 Z
REF 1.0 Units REF 1.0 Units
1 200.0 mUnits/ 1 200.0 mUnits/
hp 55.615 Ω 2.2849 Ω hp 38.584 Ω –2.2656 Ω
PHASE-OUT
C C
MARKER 1 MARKER 1
D 900.0 MHz D 1.9 GHz
1 1
START 0.400000000 GHz START 1.400000000 GHz
STOP 1.400000000 GHz STOP 2.400000000 GHz
S22 log MAG. S22 log MAG.
REF 0.0 dB REF 0.0 dB
1 10.0 dB/ 1 10.0 dB/
–24.754 dB –18.196 dB
hp hp
C MARKER 1 C MARKER 1
900.0 MHz 1.9 GHz
D D
1
1
1
START 0.400000000 GHz START 1.400000000 GHz
STOP 1.400000000 GHz STOP 2.400000000 GHz
14 Data Sheet P14729EJ2V0DS00
µPC8172TB
S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) −ON EVALUATION BOARD−
(S22 data are monitored at RF connector on board)
2.4 GHz (matched in test circuit 3)
S22 Z
REF 1.0 Units
1 200.0 mUnits/
hp 47.975 Ω –7.1113 Ω
PHASE-OUT
C
MARKER 1
D 2.4 GHz
1
START 1.900000000 GHz
STOP 2.900000000 GHz
S22 log MAG.
REF 0.0 dB
1 10.0 dB/
–22.326 dB
hp
C MARKER 1
2.4 GHz
D
1
1
START 1.900000000 GHz
STOP 2.900000000 GHz
Data Sheet P14729EJ2V0DS00 15
µPC8172TB
CONVERSION GAIN vs. LOCAL INPUT LEVEL RF OUTPUT LEVEL vs. IF INPUT LEVEL
15 5 VCC = 3.3 V
VCC = 3.3 V
(dB) 10 (dBm) 0
VCC = 3.0 V VCC = 3.0 V
CG 5 PRFout –5 VCC = 2.7 V
VCC = 2.7 V
ConversionT Gain
0 RF Output Level –10
–5 –15
fRFout = 900 MHz fRFout = 900 MHz
–10 fLOin = 1 140 MHz –20 fLOin = 1 140 MHz
PIFin = –30 dBm PLOin = –5 dBm
VCC = VPS VCC = VPS
(dB)OU
–15 –25
–30 –25 –20 –15 –10 –5 0 5 10 –30 –25 –20 –15 –10 –5 0 5 10
Local Input Level PLOin (dBm) IF Input Level PIFin (dBm)
CONVERSION GAIN vs. LOCAL INPUT LEVEL RF OUTPUT LEVEL vs. IF INPUT LEVEL
15 5
10 (dBm) 0
TA = –40°C
CG 5 PRFout –5 TA = –40°C
Conversion PHASEGain- TA = +85°C TA = +85°C
0 RF Output Level –10
–5 TA = +25°C –15
fRFout = 900 MHz TA = +25°C fRFout = 900 MHz
–10 fLOin = 1 140 MHz –20 fLOin = 1 140 MHz
PIFin = –30 dBm PLOin = –5 dBm
–15 VCC = VPS = 3.0 V –25 VCC = VPS = 3.0 V
–30 –25 –20 –15 –10 –5 0 5 10 –30 –25 –20 –15 –10 –5 0 5 10
Local Input Level PLOin (dBm) IF Input Level PIFin (dBm)
16 Data Sheet P14729EJ2V0DS00
µPC8172TB
CONVERSION GAIN vs. LOCAL INPUT LEVEL RF OUTPUT LEVEL vs. IF INPUT LEVEL
15 5 VCC = 3.3 V
VCC = 3.3 V
(dB) 10 (dBm) 0
VCC = 3.0 V VCC = 3.0 V
CG 5 PRFout –5 VCC = 2.7 V
VCC = 2.7 V
ConversionT Gain
0 RF Output Level –10
–5 –15
fRFout = 1.9 GHz fRFout = 1.9 GHz
–10 fLOin = 1 660 MHz –20 fLOin = 1 660 MHz
PIFin = –30 dBm PLOin = –5 dBm
VCC = VPS VCC = VPS
(dB)OU–15 –25
–30 –25 –20 –15 –10 –5 0 5 10 –30 –25 –20 –15 –10 –5 0 5 10
Local Input Level PLOin (dBm) IF Input Level PIFin (dBm)
CONVERSION GAIN vs. LOCAL INPUT LEVEL RF OUTPUT LEVEL vs. IF INPUT LEVEL
15 5
10 (dBm) 0
TA = –40°C TA = –40°C
CG 5 PRFout –5
Conversion PHASEGain-
0 RF Output Level –10
TA = +25°C TA = +25°C
–5 TA = +85°C –15
fRFout = 1.9 GHz TA = +85°C fRFout = 1.9 GHz
–10 fLOin = 1 660 MHz –20 fLOin = 1 660 MHz
PIFin = –30 dBm PLOin = –5 dBm
–15 VCC = VPS = 3.0 V –25 VCC = VPS = 3.0 V
–30 –25 –20 –15 –10 –5 0 5 10 –30 –25 –20 –15 –10 –5 0 5 10
Local Input Level PLOin (dBm) IF Input Level PIFin (dBm)
Data Sheet P14729EJ2V0DS00 17
µPC8172TB
CONVERSION GAIN vs. LOCAL INPUT LEVEL RF OUTPUT LEVEL vs. IF INPUT LEVEL
15 5
VCC = 3.3 V
VCC = 3.3 V (dBm)
(dB) 10 0
CG 5 VCC = 3.0 V PRFout –5 VCC = 3.0 V
VCC = 2.7 V VCC = 2.7 V
ConversionT Gain0 RF Output Level –10
–5 fRFout = 2.4 GHz –15
fRFout = 2.4 GHz
–10 fLOin = 2 160 MHz –20 fLOin = 2 160 MHz
PIFin = –30 dBm PLOin = –5 dBm
VCC = VPS VCC = VPS
(dB)OU
–15 –25
–30 –25 –20 –15 –10 –5 0 5 10 –30 –25 –20 –15 –10 –5 0 5 10
Local Input Level PLOin (dBm) IF Input Level PIFin (dBm)
CONVERSION GAIN vs. LOCAL INPUT LEVEL RF OUTPUT LEVEL vs. IF INPUT LEVEL
15 5
10 (dBm) 0
CG 5 TA = –40°C PRFout –5 TA = –40°C
Conversion PHASEGain-0 RF Output Level –10
TA = +25°C TA = +25°C
–5 –15
TA = +85°C fRFout = 2.4 GHz TA = +85°C fRFout = 2.4 GHz
–10 fLOin = 2 160 MHz –20 fLOin = 2 160 MHz
PIFin = –30 dBm PLOin = –5 dBm
VCC = VPS = 3.0 V VCC = VPS = 3.0 V
–15 –25
–30 –25 –20 –15 –10 –5 0 5 10 –30 –25 –20 –15 –10 –5 0 5 10
Local Input Level PLOin (dBm) IF Input Level PIFin (dBm)
18 Data Sheet P14729EJ2V0DS00
µPC8172TB
(dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL (dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
(dBm) 10 (dBm) 10
IM3 PRFout 0 IM3 PRFout 0
3rd OrderT Intermodulation Distortion –10 3rd Order Intermodulation Distortion –10
RF Output Level of Each Tone –20 RF Output Level of Each Tone –20
–30 –30
–40 TA = +25°C –40 TA = –40°C
–50 VCC = VPS = 2.7 V –50 VCC = VPS = 3.0 V
fRFout = 900 MHz fRFout = 900 MHz
–60 fIFin1 = 240 MHz –60 fIFin1 = 240 MHz
fIFin2 = 241 MHz fIFin2 = 241 MHz
–70 fLOin = 1 140 MHz –70 fLOin = 1 140 MHz
PLOin = –5 dBm PLOin = –5 dBm
(dBm) U –80 –80
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
IF Input Level PIFin (dBm) IF Input Level PIFin (dBm)
3rd OrderE Intermodulation- DistortionO(dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL (dBm) (dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10 10
IM3 PRFout 0 IM3 PRFout 0
–10 3rd Order Intermodulation Distortion –10
RF Output Level of Each Tone –20 RF Output Level of Each Tone –20
–30 –30
–40 TA = +25°C –40 TA = +25°C
–50 VCC = VPS = 3.0 V –50 VCC = VPS = 3.0 V
fRFout = 900 MHz fRFout = 900 MHz
–60 fIFin1 = 240 MHz –60 fIFin1 = 240 MHz
fIFin2 = 241 MHz fIFin2 = 241 MHz
–70 fLOin = 1 140 MHz –70 fLOin = 1 140 MHz
PLOin = –5 dBm PLOin = –5 dBm
(dBm) S –80 –80
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
IF Input Level PIFin (dBm) IF Input Level PIFin (dBm)
IM3A
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL (dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
(dBm) 10 (dBm) 10
PRFout 0 IM3 PRFout 0
3rdP Order IntermodulationH Distortion –10 3rd Order Intermodulation Distortion –10
RF Output Level of Each Tone –20 RF Output Level of Each Tone –20
–30 –30
–40 TA = +25°C –40 TA = +85°C
–50 VCC = VPS = 3.3 V –50 VCC = VPS = 3.0 V
fRFout = 900 MHz fRFout = 900 MHz
–60 fIFin1 = 240 MHz –60 fIFin1 = 240 MHz
fIFin2 = 241 MHz fIFin2 = 241 MHz
–70 fLOin = 1 140 MHz –70 fLOin = 1 140 MHz
–80 PLOin = –5 dBm –80 PLOin = –5 dBm
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
IF Input Level PIFin (dBm) IF Input Level PIFin (dBm)
Data Sheet P14729EJ2V0DS00 19
µPC8172TB
(dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL (dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
(dBm) 10 (dBm) 10
IM3 PRFout 0 IM3 PRFout 0
3rd OrderT Intermodulation Distortion–10 3rd Order Intermodulation Distortion –10
RF Output Level of Each Tone –20 RF Output Level of Each Tone –20
–30 –30
–40 TA = +25°C –40 TA = –40°C
–50 VCC = VPS = 2.7 V –50 VCC = VPS = 3.0 V
fRFout = 1.9 GHz fRFout = 1.9 GHz
–60 fIFin1 = 240 MHz –60 fIFin1 = 240 MHz
fIFin2 = 241 MHz fIFin2 = 241 MHz
–70 fLOin = 1 660 MHz –70 fLOin = 1 660 MHz
PLOin = –5 dBm PLOin = –5 dBm
(dBm) U –80 –80
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
IF Input Level PIFin (dBm) IF Input Level PIFin (dBm)
3rd OrderE Intermodulation- DistortionO(dBm)IM3, RFOUTPUT LEVEL vs. IF INPUT LEVEL (dBm) (dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10 10
IM3 PRFout 0 IM3 PRFout 0
–10 3rd Order Intermodulation Distortion –10
RF Output Level of Each Tone –20 RF Output Level of Each Tone –20
–30 –30
–40 TA = +25°C –40 TA = +25°C
–50 VCC = VPS = 3.0 V –50 VCC = VPS = 3.0 V
fRFout = 1.9 GHz fRFout = 1.9 GHz
–60 fIFin1 = 240 MHz –60 fIFin1 = 240 MHz
fIFin2 = 241 MHz fIFin2 = 241 MHz
–70 fLOin = 1 660 MHz –70 fLOin = 1 660 MHz
PLOin = –5 dBm PLOin = –5 dBm
(dBm) S –80 –80
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
IF Input Level PIFin (dBm) IF Input Level PIFin (dBm)
IM3A
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL (dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
(dBm) 10 (dBm) 10
PRFout 0 IM3 PRFout 0
3rdP Order IntermodulationH Distortion–10 3rd Order Intermodulation Distortion –10
RF Output Level of Each Tone –20 RF Output Level of Each Tone –20
–30 –30
–40 TA = +25°C –40 TA = +85°C
–50 VCC = VPS = 3.3 V –50 VCC = VPS = 3.0 V
fRFout = 1.9 GHz fRFout = 1.9 GHz
–60 fIFin1 = 240 MHz –60 fIFin1 = 240 MHz
fIFin2 = 241 MHz fIFin2 = 241 MHz
–70 fLOin = 1 660 MHz –70 fLOin = 1 660 MHz
–80 PLOin = –5 dBm –80 PLOin = –5 dBm
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
IF Input Level PIFin (dBm) IF Input Level PIFin (dBm)
20 Data Sheet P14729EJ2V0DS00
µPC8172TB
(dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL (dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
(dBm) 10 (dBm) 10
IM3 PRFout 0 IM3 PRFout 0
3rd OrderT Intermodulation Distortion –10 3rd Order Intermodulation Distortion –10
RF Output Level of Each Tone –20 RF Output Level of Each Tone –20
–30 –30
–40 TA = +25°C –40 TA = –40°C
–50 VCC = VPS = 2.7 V –50 VCC = VPS = 3.0 V
fRFout = 2.4 GHz fRFout = 2.4 GHz
–60 fIFin1 = 240 MHz –60 fIFin1 = 240 MHz
fIFin2 = 241 MHz fIFin2 = 241 MHz
–70 fLOin = 2 160 MHz –70 fLOin = 2 160 MHz
PLOin = –5 dBm PLOin = –5 dBm
(dBm) U –80 –80
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
IF Input Level PIFin (dBm) IF Input Level PIFin (dBm)
3rd OrderE Intermodulation- DistortionO(dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL (dBm) (dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10 10
IM3 PRFout 0 IM3 PRFout 0
–10 3rd Order Intermodulation Distortion –10
RF Output Level of Each Tone –20 RF Output Level of Each Tone –20
–30 –30
–40 TA = +25°C –40 TA = +25°C
–50 VCC = VPS = 3.0 V –50 VCC = VPS = 3.0 V
fRFout = 2.4 GHz fRFout = 2.4 GHz
–60 fIFin1 = 240 MHz –60 fIFin1 = 240 MHz
fIFin2 = 241 MHz fIFin2 = 241 MHz
–70 fLOin = 2 160 MHz –70 fLOin = 2 160 MHz
PLOin = –5 dBm PLOin = –5 dBm
(dBm) S –80 –80
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
IF Input Level PIFin (dBm) IF Input Level PIFin (dBm)
IM3A
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL (dBm) IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
(dBm) 10 (dBm) 10
PRFout 0 IM3 PRFout 0
3rdP Order IntermodulationH Distortion –10 3rd Order Intermodulation Distortion –10
RF Output Level of Each Tone –20 RF Output Level of Each Tone –20
–30 –30
–40 TA = +25°C –40 TA = +85°C
–50 VCC = VPS = 3.3 V –50 VCC = VPS = 3.0 V
fRFout = 2.4 GHz fRFout = 2.4 GHz
–60 fIFin1 = 240 MHz –60 fIFin1 = 240 MHz
fIFin2 = 241 MHz fIFin2 = 241 MHz
–70 fLOin = 2 160 MHz –70 fLOin = 2 160 MHz
–80 PLOin = –5 dBm –80 PLOin = –5 dBm
–30 –25 –20 –15 –10 –5 0 5 –30 –25 –20 –15 –10 –5 0 5
IF Input Level PIFin (dBm) IF Input Level PIFin (dBm)
Data Sheet P14729EJ2V0DS00 21
µPC8172TB
LOCAL LEAKAGE AT IF PIN vs. LOCAL LEAKAGE AT IF PIN vs.
LOCAL INPUT FREQUENCY LOCAL INPUT FREQUENCY
0 0
(dBm) –10 (dBm) –10
LOif LOif
Pin –20 Pin –20
IF IF
LocalTat at
Leakage –30 Leakage –30
–40 fRFout = 900 MHz Local –40 fRFout = 1.9 GHz
PLOin = –5 dBm PLOin = –5 dBm
(dBm)OU VCC = VPS = 3.0 V VCC = VPS = 3.0 V
–50 0 0.5 1 1.5 2 2.5 3 –50 0 0.5 1 1.5 2 2.5 3
Local Input Frequency fLOin (GHz) Local Input Frequency fLOin (GHz)
LOCAL LEAKAGE AT RF PIN vs. LOCAL LEAKAGE AT RF PIN vs.
LOCAL INPUT FREQUENCY LOCAL INPUT FREQUENCY
0 0
–10 (dBm) –10
LOrfPin- LOrf
–20 Pin –20
RF RF
LeakageE
at –30 at –30
–40 fRFout = 900 MHz Leakage –40 fRFout = 1.9 GHz
Local PLOin = –5 dBm Local PLOin = –5 dBm
(dBm)AS VCC = VPS = 3.0 V VCC = VPS = 3.0 V
–50 0 0.5 1 1.5 2 2.5 3 –50 0 0.5 1 1.5 2 2.5 3
Local Input Frequency fLOin (GHz) Local Input Frequency fLOin (GHz)
IF LEAKAGE AT RF PIN vs. IF LEAKAGE AT RF PIN vs.
IF INPUT FREQUENCY IF INPUT FREQUENCY
–50 0
fRFout = 1.9 GHz
(dBm) fLOin = 1 660 MHz
–60 –10 PLOin = –5 dBm
a tH
IFrf IFrf VCC = VPS = 3.0 V
Pin –70 Pin –20
RF RF
–80 at –30
LeakageI FP fRFout = 900 MHz Leakage
–90 fLOin = 1 140 MHz –40
PLOin = –5 dBm IF
VCC = VPS = 3.0 V
–100 0 100 200 300 400 500 –50 0 100 200 300 400 500
IF Input Frequency fIFin (MHz) IF Input Frequency fIFin (MHz)
22 Data Sheet P14729EJ2V0DS00
µPC8172TB
LOCAL LEAKAGE AT IF PIN vs. LOCAL LEAKAGE AT RF PIN vs.
LOCAL INPUT FREQUENCY LOCAL INPUT FREQUENCY
0 0
(dBm) –10 (dBm) –10
LOif LOrf
LocalT Leakage at IF Pin–20 Local Leakage at RF Pin –20
–30 –30
–40 fRFout = 2.4 GHz –40 fRFout = 2.4 GHz
PLOin = –5 dBm PLOin = –5 dBm
(dBm)OU VCC = VPS = 3.0 V VCC = VPS = 3.0 V
–50 0 0.5 1 1.5 2 2.5 3 –50 0 0.5 1 1.5 2 2.5 3
Local Input Frequency fLOin (GHz) Local Input Frequency fLOin (GHz)
IF LEAKAGE AT RF PIN vs.
IF INPUT FREQUENCY
0
fRFout = 2.4 GHz
fLOin = 2 160 MHz
–10 PLOin = –5 dBm
VCC = VPS = 3.0 V
IF PHAS LeakageE atRFPin-IFrf
–20
–30
–40
–50 0 100 200 300 400 500
IF Input Frequency fIFin (MHz)
Remark The graphs indicate nominal characteristics.
Data Sheet P14729EJ2V0DS00 23
µPC8172TB
8. PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
1.25±0.1
2.0±0.2T 0.65 0.2–+00..015
1.3
0.9±0.1 U0.65
0.1 MIN.
0.7 0.1O 0.15–+00..015
to
0 PHASE-
24 Data Sheet P14729EJ2V0DS00
µPC8172TB
9. NOTE ON CORRECT USE
(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
(3) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin.
(4) Connect a matching circuit to the RF output pin.
(5) The DC cut capacitor must be each attached to the input and output pins.
PHASE-OUT10.RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
Soldering Method Soldering Conditions Recommended Condition Symbol
Infrared Reflow Package peak temperature: 235°C or below IR35-00-3
Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limit: NoneNote
VPS Package peak temperature: 215°C or below VP15-00-3
Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limit: NoneNote
Wave Soldering Soldering bath temperature: 260°C or below WS60-00-1
Time: 10 seconds or less
Count: 1, Exposure limit: NoneNote
Partial Heating Pin temperature: 300°C −
Time: 3 seconds or less (per side of device)
Exposure limit: NoneNote
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P14729EJ2V0DS00 25
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
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incurred by you resulting from errors in or omissions from the information included herein.
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the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
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NOTE 3: Products and product information are subject to change without notice.
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