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TQP7M9103

器件型号:TQP7M9103
器件类别:无线/射频/通信    RF 放大器   
厂商名称:Qorvo
厂商官网:https://www.qorvo.com/
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TQP7M9103 ¥72.18 1 点击查看 点击购买

器件描述

频率范围:400MHz ~ 4GHz IP1dB:29.5dBm 增益:16.6dB 噪声系数:4.4dB

参数
产品属性属性值
属性:参数值
商品目录:RF 放大器
频率范围:400MHz ~ 4GHz
电源电流:235mA
RF 类型:LTE, W-CDMA, CDMA
工作电压:5V
IP1dB:29.5dBm
增益:16.6dB
测试频率:2.14GHz
噪声系数:4.4dB

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TQP7M9103
®
1W High Linearity Amplifier
Product Overview
The TQP7M9103 is a high linearity driver amplifier in
industry standard, RoHS compliant, SOT-89 surface mount
package. This InGaP/GaAs HBT delivers high performance
across a broad range of frequencies while achieving
+45 dBm OIP3 and +29.5 dBm P1dB while only consuming
235 mA quiescent current. All devices are 100% RF and
DC tested.
The TQP7M9103 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input power
levels that may occur in a system.
The TQP7M9103 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium power,
and high efficiency are required. The device an excellent
candidate for transceiver line cards and high power
amplifiers in current and next generation multi-carrier
3G / 4G base stations.
3-pin SOT−89 Package
Key Features
400 – 4000 MHz
+29.5 dBm P1dB
+45 dBm Output IP3
16.5 dB Gain at 2140 MHz
+5 V Single Supply, 235 mA Current
Internal RF Overdrive Protection
Internal DC Overvoltage Protection
On chip ESD Protection
RF Power Handling
10:1 VSWR, V
CC
=+5 V, 2.14 GHz
Pout=+29.5 dBm CW
Pout=+20 dBm WCDMA
SOT−89 Package
Functional Block Diagram
GND
4
Applications
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
General Purpose Wireless
1
RF IN
2
GND
3
RF OUT
Top View
Ordering Information
Part No.
TQP7M9103
TQP7M9103-PCB900
TQP7M9103-PCB2140
TQP7M9103-PCB2600
Description
1 W High Linearity Amplifier
920 – 960 MHz Evaluation Board
2.11 – 2.17 GHz Evaluation Board
2.62 – 2.69 GHz Evaluation Board
www.qorvo.com
Standard T/R size = 1000 pieces on a 7” reel
Data Sheet, April 13, 2018 | Subject to change without notice
1 of 24
TQP7M9103
®
1W High Linearity Amplifier
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power,
CW, 50 Ω, T=+25 °C
Device Voltage (V
CC
)
Rating
−65 to 150 °C
+30 dBm
+8 V
Recommended Operating Conditions
Parameter
Device Voltage (V
CC
)
T
CASE
Tj for >10
6
hours MTTF
Min
−40
Typ
+5.0
Max Units
+5.25
+105
+170
V
°C
°C
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: V
CC
= +5.0 V, Temp= +25 °C
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
WCDMA Output Power
Noise Figure
Quiescent Current, I
CQ
Thermal Resistance, θ
jc
Notes:
1.
Conditions
Min
400
14.7
Typ
2140
16.6
12.0
15.0
+29.5
+45
+20
4.4
235
Max Units
4000
17.7
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
°C/W
Pout = +15 dBm/tone, ∆f = 1 MHz
−50 dBc ACLR 
(1)
+28.5
+42.5
210
Module (junction to case)
260
35.6
ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet, April 13, 2018 | Subject to change without notice
2 of 24
www.qorvo.com
TQP7M9103
®
1W High Linearity Amplifier
Device Characterization Data
30
Gain and Maximum Stable Gain
Gain (Max)
Input Smith Chart
1
0.8
4 GHz
0.6
Output Smith Chart
25
20
Gain (dB)
4 GHz
0.4
15
10
5
Gain (S21)
0.01 GHz
0.2
0
-0.2
-1 -0.75
-0.5-0.25 0 0.25 0.5 0.75 1
-0.4
-0.6
0.01 GHz
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-0.8
Frequency (GHz)
-1
Note:
The gain for the unmatched device in 50 ohm system is shown as the trace in red color, [Gain (S21)]. For a tuned circuit for a particular
frequency, its expected gain will be higher, up to the maximum stable gain. The maximum stable gain is shown as the black trace, [Gain (Max)]. The
impedance plots are shown from 0.01– 4 GHz.
S-Parameters
Test Conditions: V
CC
=+5 V, I
CQ
=235 mA, T=+25
°
C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
S11 (dB)
-1.05
-1.15
-2.07
-1.01
-0.61
-0.59
-0.62
-0.62
-0.67
-0.64
-0.75
-0.64
-0.62
-0.77
-0.66
-0.73
-0.69
-0.74
-0.74
-0.72
-0.77
-0.80
S11 (ang)
179.35
176.19
171.50
-176.54
173.92
169.36
164.62
160.93
156.67
153.26
149.43
145.77
142.62
139.07
135.41
132.81
128.99
125.72
122.13
119.18
116.00
113.01
S21 (dB)
15.75
13.33
11.63
15.01
13.87
13.05
12.35
11.51
10.73
10.00
9.12
8.50
7.90
7.16
6.58
6.04
5.51
5.01
4.52
4.02
3.52
3.15
S21 (ang)
154.01
155.93
168.26
153.46
137.55
125.26
114.05
103.77
94.67
86.25
78.19
70.63
63.72
57.32
51.13
45.43
39.41
33.18
27.44
22.42
16.74
11.74
S12 (dB)
-35.54
-35.54
-37.45
-36.02
-35.08
-34.89
-34.56
-34.60
-34.79
-34.75
-34.75
-34.81
-34.51
-34.72
-34.60
-34.65
-34.51
-34.65
-34.60
-34.56
-34.37
-34.33
S12 (ang)
-2.51
-9.63
-27.07
22.73
6.61
0.27
-4.24
-7.64
-12.27
-15.00
-17.78
-20.08
-23.77
-26.63
-29.04
-33.24
-33.49
-34.26
-37.56
-43.68
-44.96
-46.26
S22 (dB)
-2.94
-2.28
-2.00
-3.38
-3.21
-3.18
-3.13
-3.21
-3.18
-3.21
-3.25
-3.09
-3.24
-3.10
-3.07
-3.16
-3.09
-3.12
-3.09
-3.13
-3.04
-2.96
S22 (ang)
-171.04
-176.20
176.45
172.64
171.33
168.76
166.33
164.22
162.12
159.50
156.37
154.32
151.96
148.69
147.12
144.43
141.32
138.96
136.12
133.54
130.91
128.69
Data Sheet, April 13, 2018 | Subject to change without notice
3 of 24
www.qorvo.com
TQP7M9103
®
1W High Linearity Amplifier
Evaluation Board, 615 – 655 MHz Reference Design
J4
J3
J3 +5V
1.0 uF
C7
C6
C7
J4 GND
C6
100 pF
L3
33 nH
J1
RF
Input
C1
L1
1
L3
U1
C1
L1
L2
C2
C5
C3
U1
TQP7M9103
L2
3
C2
J2
RF
Output
100 pF
C3
10 pF
3.9 nH
2,4
3.9 nH
C5 100 pF
7.5 pF
Notes:
1.
2.
3.
4.
5.
Components shown on the silkscreen but not on the schematic are not used.
0 Ω resistor can be replaced with copper trace in the target application layout.
All components are of 0603 size unless stated on the schematic.
The recommended component values are dependent upon the frequency of operation.
Critical component placement locations:
Distance between U1 Pin 1 Pad left edge to L1 (right edge): 55 mil
Distance between U1 Pin 1 Pad left edge to C3 (right edge): 130 mil
Distance between U1 Pin 3 Pad right edge to C5 (left edge): 160 mil
Distance between U1 Pin 3 Pad right edge to L2 (left edge): 85 mil
Bill of Material, 615 – 655 MHz
Reference Des.
n/a
U1
C3
C5
C1, C2, C6
C7
L1, L2
L3
Value
n/a
n/a
10 pF
7.5 pF
100 pF
1.0 uF
3.9 nH
33 nH
Description
Printed Circuit Board
1 W High Linearity Amplifier
CAP, 0603, ± 0.05 pF, 50V, NPO
CAP, 0603, ± 0.05 pF, 50V, NPO
CAP, 0603, 5%, 50V, NPO/COG
CAP, 0603, 10%, X5R , 10V
IND, 0603, +/-0.3nH
IND, 0805, 5%, Wirewound
Manuf.
Qorvo
Qorvo
AVX
AVX
various
various
TOKO
Coilcraft
Part Number
TQP7M9103
06032U100J
06032U7R5B
LL1608-FSL3N9S
0805CS-330XJL
Data Sheet, April 13, 2018 | Subject to change without notice
4 of 24
www.qorvo.com
TQP7M9103
®
1W High Linearity Amplifier
Typical Performance, 615 – 655 MHz
Test conditions unless otherwise noted: V
C C
= +5 V, I
CQ 
= 235 mA, Temp. = +25 °C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power 
(1)
Conditions
617
20.9
9.5
20
+29.3
+47.7
+19.3
Typical Value
635
20.9
10
19
+29.5
+46.2
+19.2
652
20.8
10
18
+29.7
+44.2
+18.3
Units
MHz
dB
dB
dB
dBm
dBm
dBm
Pout = +19 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
Notes:
1. 1C 20MHz LTE signal, PAR=9.5dB
Performance Plots, 615 – 655 MHz
Test conditions unless otherwise noted: V
C C
= +5 V, I
CQ 
= 235 mA, Temp. = +25 °C
23
Gain vs. Frequency
0
Return Loss vs. Frequency
49
48
OIP3 vs. Pout/tone
22
-5
47
46
|S11| & |S22| (dB)
Gain (dB)
21
-10
OIP3 (dBm)
45
44
43
42
20
-15
19
-20
Input Return Loss
41
617 MHz
40
39
635 MHz
652 MHz
Output Return Loss
18
-25
600
610
620
630
640
650
660
670
600
610
620
630
640
650
660
670
14
15
16
17
18
19
20
21
22
Frequency (MHz)
Frequency (MHz)
Pout/Tone (dBm)
-35
ACPR vs Pout
1C 20MHz LTE signal, PAR=9.5dB
-40
ACPR (dBc)
-45
-50
-55
617 MHz
635 MHz
652 MHz
-60
15
16
17
18
19
20
21
22
Pout (dBm)
Data Sheet, April 13, 2018 | Subject to change without notice
5 of 24
www.qorvo.com

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