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TISP3XXXH3SL

器件型号:TISP3XXXH3SL
厂商名称:Bourns
厂商官网:http://www.bourns.com
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器件描述

Overvoltage Protector Series

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oH
VE S CO
AV R M
AI SIO PL
LA N IA
BL S NT
E
TISP3070H3SL THRU TISP3115H3SL,
TISP3125H3SL THRU TISP3210H3SL,
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP3xxxH3SL Overvoltage Protector Series
TISP3xxxH3SL Overview
This TISP
®
device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP3xxxH3SL protects R-G and T-G. In addition, the device is rated for simultaneous R-G and T-G impulse conditions. The
TISP3xxxH3SL is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used.
These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950,
EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP3350H3SL meets the FCC Part 68 “B” ringer voltage requirement and sur-
vives both Type A and B impulse tests. These devices are housed in a through-hole 3-pin single-in-line (SL) plastic package.
Summary Electrical Characteristics
V
DRM
V
(BO)
V
T
@ I
T
V
V
V
TISP3070H3
58
70
3
TISP3080H3
65
80
3
TISP3095H3
75
95
3
TISP3115H3
90
115
3
TISP3125H3
100
125
3
TISP3135H3
110
135
3
TISP3145H3
120
145
3
TISP3180H3
145
180
3
TISP3210H3
160
210
3
TISP3250H3
190
250
3
TISP3290H3
220
290
3
TISP3350H3
275
350
3
† Bourns part has an improved protection voltage
Part #
I
DRM
µA
5
5
5
5
5
5
5
5
5
5
5
5
I
(BO)
mA
600
600
600
600
600
600
600
600
600
600
600
600
I
T
A
5
5
5
5
5
5
5
5
5
5
5
5
I
H
mA
150
150
150
150
150
150
150
150
150
150
150
150
C
o
@ -2 V
pF
140
140
140
74
74
74
74
74
74
62
62
62
Functionally
Replaces
P1402AC†
P1602AC†
P2202AC†
P2702AC†
P3002AC
P3602AC†
P4202AC
P4802AC†
P6002AC
Summary Current Ratings
Parameter
Waveshape
Value
2/10
500
1.2/50, 8/20
300
10/160
250
I
TSP
A
5/320
200
10/560
130
10/1000
100
I
TSM
A
1 cycle 60 Hz
60
di/dt
A/µs
2/10 Wavefront
400
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JANUARY 1999 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxH3SL Overvoltage Protector Series
ITU-T K.20/21 Rating . . . . . . . . 8 kV 10/700, 200 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Device
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
V
DRM
V
58
65
75
90
100
110
120
145
160
190
220
275
V
(BO)
V
70
80
95
115
125
135
145
180
210
250
290
350
SL Package (Top View)
T
G
R
1
2
3
MDXXAGA
Device Symbol
T
R
SD3XAA
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
Waveshape
2/10
µs
8/20
µs
10/160
µs
10/700
µs
10/560
µs
10/1000
µs
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
I
TSP
A
500
300
250
200
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
3-Pin Through-Hole Packaging
- Compatible with TO-220AB pin-out
- Low Height ................................................................... 8.3mm
Low Differential Capacitance ...................................... < 67 pF
160
100
.............................................. UL Recognized Component
Description
The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.
The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping
until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes
the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as
the diverted current subsides.
How To Order
For Standard
Termination Finish
Order As
TISP3xxxH3SL
For Lead Free
Termination Finish
Order As
TISP3xxxH3SL-S
Device
TISP3xxxH3
Package
SL (Single-in-Line)
Carrier
Tube
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
This TISP3xxxH3SL range consists of twelve voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in
a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in
SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A 10/1000 TISP3xxxF3SL series is
available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover
control and are virtually transparent to the system in normal operation.
JANUARY 1999 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxH3SL Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
Symbol
Value
±
58
±
65
±
75
±90
±100
±110
±120
±145
±160
±190
±220
±275
500
300
250
220
200
200
200
200
160
100
55
60
1
400
-40 to +150
-65 to +150
Unit
Repetitive peak off-state voltage, (see Note 1)
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10
µs
(GR-1089-CORE, 2/10
µs
voltage wave shape)
8/20
µs
(IEC 61000-4-5, 1.2/50
µs
voltage, 8/20 current combination wave generator)
10/160
µs
(FCC Part 68, 10/160
µs
voltage wave shape)
5/200
µs
(VDE 0433, 10/700
µs
voltage wave shape)
0.2/310
µs
(I3124, 0.5/700
µs
voltage wave shape)
5/310
µs
(ITU-T K.20/21, 10/700
µs
voltage wave shape)
5/310
µs
(FTZ R12, 10/700
µs
voltage wave shape)
5/320
µs
(FCC Part 68, 9/720
µs
voltage wave shape)
10/560
µs
(FCC Part 68, 10/560
µs
voltage wave shape)
10/1000
µs
(GR-1089-CORE, 10/1000
µs
voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
I
TSP
A
I
TSM
di
T
/dt
T
J
T
stg
A
A/µs
°C
°C
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP3xxxH3SL must be in thermal equilibrium.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T
terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G
terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the
TISP3xxxH3SL returns to its initial conditions.
4. See Figure 10 for impulse current ratings at other temperatures. Above 85
°C,
derate linearly to zero at 150
°C
lead
temperature.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for
simultaneous operation. In this condition, the G terminal current will be 2xI
TSM(t)
, the sum of the R and T terminal currents. Derate
current values at -0.61 %/°C for ambient temperatures above 25
°C.
JANUARY 1999 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxH3SL Overvoltage Protector Series
Electrical Characteristics for the R and G or T and G Terminals, TA = 25
°C
(Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Test Conditions
V
D
= V
DRM
T
A
= 25
°C
T
A
= 85
°C
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
±0.15
±0.15
±5
±10
170
90
84
150
79
67
140
74
62
73
35
28
33
26
Min
Typ
Max
±5
±10
±70
±80
±95
±115
±125
±135
±145
±180
±210
±250
±290
±350
±78
±88
±103
±124
±134
±144
±154
±189
±220
±261
±302
±362
±0.6
±3
±0.6
Unit
µA
I
DRM
V
(BO)
Breakover voltage
dv/dt =
±750
V/ms,
R
SOURCE
= 300
V
V
(BO)
Impulse breakover
voltage
dv/dt
±1000
V/µs, Linear voltage ramp,
Maximum ramp value =
±500
V
di/dt =
±20
A/µs, Linear current ramp,
Maximum ramp value =
±10
A
V
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt =
±750
V/ms, R
SOURCE
= 300
I
T
=
±5
A, t
W
= 100
µs
I
T
=
±5
A, di/dt = - /+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
=
±50
V
f = 100 kHz, V
d
= 1 V rms, V
D
= 0,
T
A
= 85
°C
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3125 thru ‘3210
‘3250 thru ‘3350
A
V
A
kV/µs
µA
f = 100 kHz, V
d
= 1 V rms, V
D
= -1 V
C
off
Off-state capacitance
f = 100 kHz, V
d
= 1 V rms, V
D
= -2 V
pF
f = 100 kHz, V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz, V
d
= 1 V rms, V
D
= -100 V
(see Note 6)
NOTE
6: To avoid possible voltage clipping, the ‘3125 is tested with V
D
= -98 V.
JANUARY 1999 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxH3SL Overvoltage Protector Series
Electrical Characteristics for the R and T Terminals, TA = 25
°C
(Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Test Conditions
V
D
= 2V
DRM
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
Min
Typ
Max
±5
±140
±160
±190
±230
±250
±270
±290
±360
±420
±500
±580
±700
±156
±176
±206
±248
±268
±288
±308
±378
±440
±522
±604
±724
Unit
µA
I
DRM
V
(BO)
Breakover voltage
dv/dt =
±750
V/ms, R
SOURCE
= 300
V
V
(BO)
Impulse breakover
voltage
dv/dt
±1000
V/µs, Linear voltage ramp,
Maximum ramp value =
±500
V
di/dt =
±20
A/µs, Linear current ramp,
Maximum ramp value =
±10
A
V
Thermal Characteristics
Parameter
R
θ
JA
Junction to free air thermal resistance
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 °C, (see Note 7)
Min
Typ
Max
50
Unit
° C/W
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JANUARY 1999 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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