Advance Product Information
Jan 17, 2005
27 - 31 GHz 1W Power Amplifier TGA4509-EPU
Key Features
22 dB Nominal Gain @ 30 GHz
30 dBm Nominal Pout @ P1dB
25% PAE @ P1dB
-10 dB Nominal Return Loss
Built-in Power Detector
0.25-m mmW pHEMT 3MI
Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA
Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm
(0.096 x 0.045 x 0.004 in)
Primary Applications
Point to Point Radio
Point to Multi-point Radio
LMDS
Satellite Ground Terminal
Fixtured Measured Performance
Bias Conditions: Vd = 6 V, Id =420 mA
30
25
20
15 S21
10
Sij (dB) 5
0
-5
-10
-15
-20 S22 S11
-25
-30
25 26 27 28 29 30 31 32 33 34
Frequency (GHz) 1000
800
32 600
400
30 200
0
Pout (dBm) & Gain (dB) 28 21
Data taken 26
@ 30 GHz
24 Pout IDS (mA)
22
20 Gain
18
16 IDS
14
12
10
-12 -9 -6 -3 0 3 6 9 12 15 18
Pin (dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1
Advance Product Information
Jan 17, 2005
TGA4509-EPU
TABLE I
MAXIMUM RATINGS 1/
Symbol Parameter Value Notes
V+ Positive Supply Voltage 7V 2/, 5/
V- Negative Supply Voltage Range 3/, 4/
Gate Current -5 V to 0 V
|Ig| Positive Supply Current 35.2 mA
I+ Power Dissipation 930 mA
Input Continuous Wave Power TBD
PD Operating Channel Temperature 22 dBm
PIN Mounting Temperature (30 seconds) 150 C
TCH Storage Temperature 320 C
TM -65 C to 150 C
TSTG
1/ These values represent the maximum operable values of this device
2/ Total current for the entire MMIC
3/ These ratings apply to each individual FET
4/ Junction operating temperature will directly affect the device mean time to
failure (MTTF). For maximum life it is recommended that junction
temperatures be maintained at the lowest possible levels.
5/ The maximum supply current from one side is 650 mA. From both sides, the
maximum supply current is 930 mA.
TABLE II
ELECTRICAL CHARACTERISTICS
(TA = 25oC, Nominal)
Parameter Units Typical
Drain Operating Voltage V 6
Quiescent Current mA 420
Small Signal Gain @ 30 GHz dB 22
Gain Flatness dB/50MHz 0.0660
Input Return Loss (Linear Small Signal) dB -10
Output Return Loss (Linear Small Signal) dB -10
Reverse Isolation dB -40
CW Output Power @ P1dB dBm 30
Power Added Efficiency @ P1dB % 25
P1dB temperature coeff. TC (-40 to +85 C) dB/deg C 0.0135
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2
Advance Product Information
Jan 17, 2005
TGA4509-EPU
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 420 mA
26
24
22
20
Gain (dB) 18
16
14
12
10
8
6
26 27 28 29 30 31 32 33 34
Frequency (GHz)
Return Loss (dB) 0
S11
-5
-10 S22
-15
-20
-25
-30
25 26 27 28 29 30 31 32 33 34
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3
Advance Product Information
Jan 17, 2005
TGA4509-EPU
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 420 mA
32
Psat
31
Power (dBm) 30
Pout @ P1dB (dBm)
29
28
27
26
27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 32.5 33 33.5
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4
Vg (optional) Advance Product Information
0.01 PF Jan 17, 2005
TGA4509-EPU
Recommended Assembly Diagram
Vd
0.01 PF
Reference 100pF 100pF 0.01PF DQ
Diode cap
(opt.)
Input Output
TFN TFN
100pF 100pF Power
0.01 PF 0.01 PF Detector
Vd (optional)
Vg
Notes:
1. Connection to power det, ref diode shown.
2. 1 F cap on gate & drain power supplies are lines required.
3. Gate voltage can either be from one side or both sides.
4. Drain voltage is required from both sides for Id > 650 mA.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5
Advance Product Information
Jan 17, 2005
TGA4509-EPU
On-chip diode functions as envelope detector
External coupler and DC bias required
TGA4509 measured detector voltage offset vs output power with 20dB
coupler: Vb=0.8V, f = 30GHz, Coupler loss is uncalibrated, 10K load
10
Detector voltage (V) 1
0.1
0.01 10 12 14 16 18 20 22 24 26 28 30 32
8 Pout (dBm)
Video out TGA4509 External coupler
(Vdet) (-20dB)
RF
OUT 50:
C=2pF External
DC bias
10K:
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6
Advance Product Information
Jan 17, 2005
TGA4509-EPU
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7
Advance Product Information
Jan 17, 2005
TGA4509-EPU
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8
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