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SS8550

器件型号:SS8550
器件类别:半导体    分立半导体   
厂商名称:BILIN
厂商官网:http://www.galaxycn.com/
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器件描述

RF SMALL SIGNAL TRANSISTOR

射频小信号晶体管

参数
SS8550状态 Active

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BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
Collector Current.(I
C
= 1.5A)
Complementary To SS8550.
Collector Dissipation: P
C
=0.3W (T
C
=25°C)
Production specification
SS8550
Pb
Lead-free
APPLICATIONS
High Collector Current.
SOT-23
ORDERING INFORMATION
Type No.
SS8550
Marking
Y2
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
-40
-25
-5
-1.5
0.3
-55~150
Units
V
V
V
A
W
Document number: BL/SSSTC087
Rev.A
www.galaxycn.com
1
BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Base-emitter voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
BEF
Test conditions
I
C
=-100μA,I
E
=0
I
C
=-0.1mA,I
B
=0
B
Production specification
SS8550
unless otherwise specified
MIN
-40
-25
-5
-0.1
-0.1
-0.1
120
40
-0.5
-1.2
100
20
-1.6
V
V
MHz
pF
V
400
TYP
MAX
UNIT
V
V
V
μA
μA
μA
I
E
=-100μA,I
C
=0
V
CB
=-40V,I
E
=0
V
CE
=-20V,I
B
=0
B
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-100mA
V
CE
=-1V,I
C
=-800mA
I
C
=-800mA, I
B
= -80mA
B
I
C
=-800mA, I
B
= -80mA
B
V
CE
=-10V, I
C
= -50mA
f=30MHz
V
CB
=-10V,I
E
=0,f=1MHz
I
E
=-1.5A
CLASSIFICATION
Rank
Range
OF
h
FE(1)
L
120-200
H
200-350
J
300-400
Document number: BL/SSSTC087
Rev.A
www.galaxycn.com
2
BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
Production specification
SS8550
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC087
Rev.A
www.galaxycn.com
3
BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
E
Production specification
SS8550
SOT-23
SOT-23
Dim
A
B
C
D
Min
2.85
1.25
0.37
0.35
1.85
0.02
2.35
Max
2.95
1.35
0.43
0.48
1.95
0.1
2.45
K
B
1.0Typical
D
G
J
E
G
H
H
C
J
K
0.1Typical
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
Device
SS8550
INFORMATION
Package
SOT-23
Shipping
3000/Tape&Reel
Document number: BL/SSSTC087
Rev.A
www.galaxycn.com
4
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