SFR9230B / SFU9230B SFR9230B / SFU9230B
200V P-Channel MOSFET
General Description Features
These P-Channel enhancement mode power field effect -5.4A, -200V, RDS(on) = 0.8 @VGS = -10 V
transistors are produced using Fairchild's proprietary, Low gate charge ( typical 33 nC)
planar, DMOS technology. Low Crss ( typical 45 pF)
This advanced technology has been especially tailored to Fast switching
minimize on-state resistance, provide superior switching 100% avalanche tested
performance, and withstand high energy pulse in the Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
S
D !
G!
GS D-PAK GDS I-PAK
SFR Series SFU Series
!
D
Absolute Maximum Ratings TC = 25C unless otherwise noted
Symbol Parameter SFR9230B / SFU9230B Units
VDSS -200 V
ID Drain-Source Voltage -5.4 A
-3.4 A
IDM Drain Current - Continuous (TC = 25C) (Note 1) -22 A
VGSS Drain Current - Continuous (TC = 100C) 30 V
EAS - Pulsed 390 mJ
IAR -5.4 A
EAR Gate-Source Voltage 4.9 mJ
dv/dt -5.5
PD Single Pulsed Avalanche Energy (Note 2) 2.5 V/ns
49 W
TJ, TSTG Avalanche Current (Note 1) 0.39 W
TL
Repetitive Avalanche Energy (Note 1) -55 to +150 W/C
C
Peak Diode Recovery dv/dt (Note 3) 300
C
Power Dissipation (TA = 25C) *
Power Dissipation (TC = 25C)
- Derate above 25C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol Parameter Typ Max Units
RJC Thermal Resistance, Junction-to-Case -- 2.55 C/W
RJA Thermal Resistance, Junction-to-Ambient * -- 50 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 110 C/W
* When mounted on the minimum pad size recommended (PCB Mount)
2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Electrical Characteristics TC = 25C unless otherwise noted SFR9230B / SFU9230B
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A -200 -- -- V
BVDSS Breakdown Voltage Temperature ID = -250 A, Referenced to 25C -- -0.16 -- V/C
/ TJ Coefficient
VDS = -200 V, VGS = 0 V -- -- -1 A
IDSS Zero Gate Voltage Drain Current VDS = -160 V, TC = 125C -- -- -10 A
VGS = -30 V, VDS = 0 V -- -- -100 nA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V
RDS(on)
Static Drain-Source VGS = -10 V, ID = -2.7 A -- 0.6 0.8
On-Resistance
gFS Forward Transconductance VDS = -40 V, ID = -2.7 A (Note 4) -- 5.9 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V, -- 775 1000 pF
f = 1.0 MHz
Coss Output Capacitance -- 135 175 pF
Crss Reverse Transfer Capacitance -- 45 60 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -100 V, ID = -6.5 A, -- 10 30 ns
RG = 25
tr Turn-On Rise Time -- 30 70 ns
td(off) Turn-Off Delay Time -- 120 250 ns
tf Turn-Off Fall Time (Note 4, 5) -- 60 130 ns
Qg Total Gate Charge VDS = -160 V, ID = -6.5 A, -- 33 45 nC
Qgs Gate-Source Charge VGS = -10 V -- 4.5 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 14.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- -5.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -22 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -5.4 A -- -- -5.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -6.5 A, -- 160 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/s (Note 4) -- 1.25 -- C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20mH, IAS = -5.4A, VDD = -50V, RG = 25 , Starting TJ = 25C
3. ISD -6.5A, di/dt 400A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Typical Characteristics SFR9230B / SFU9230B
101 Top : VGS
-15.0 V
101
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V -ID , Drain Current [A]
-ID, Drain Current [A] 100 Bottom : -5.5 V
150
100 25
10-1 -55
10-2
Notes : Notes :
10-1 1. 250 s Pulse Test 1. VDS = -40V
2. TC = 25 2. 250s Pulse Test
100 101 10-1 2 4 6 8 10
-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
1.8
101
1.5 V = - 10V
DS(on) R [], GS -IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
1.2 VGS = - 20V
0.9 100
0.6 Notes :
1. VGS = 0V
Note : TJ = 25 150 25 2. 250 s Pulse Test
0.3 5 10 15 20 25 30 10-1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0 0.0
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
C = C + C (C = shorted) 12
iss gs gd ds
2000
C =C +C
oss ds gd
Crss = Cgd
10 VDS = -40V
-VGS, Gate-Source Voltage [V] V = -100V
DS
1500 C 8 VDS = -160V
iss
Capacitance [pF] 1000 6
C
500 oss 4
0 C
10-1 rss
Notes : 2
1. V = 0 V Note : ID = -6.5 A
GS
2. f = 1 MHz
0
100 101 0 8 16 24 32 40
V , Drain-Source Voltage [V] Q , Total Gate Charge [nC]
DS G
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Typical Characteristics (Continued) SFR9230B / SFU9230B
1.2 2.5
-BV DSS , (Normalized) 2.0
Drain-Source Breakdown Voltage
1.1 DS(ON) R , (Normalized)
Drain-Source On-Resistance
1.5
1.0
1.0
0.9 Notes :
1. VIDG=S =-2050V A 0.5 Notes :
2. 1. VGS = -10 V
0.0 2. ID = -3.3 A
-100
0.8 -50 0 50 100 150 200
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
6
Operation in This Area 5
is Limited by R
-ID, Drain Current [A] 101 -ID, Drain Current [A] 4
100 DS(on)
10-1 3
100 s
100 1 ms
10 ms
DC
2
Notes : 1
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
0
101 102 25 50 75 100 125 150
-V , Drain-Source Voltage [V] T , Case Temperature []
DS C
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Z (t), T herm al R esponse 100 D = 0.5 N otes :
JC 1 0 -1 1 . Z JC(t) = 2 .5 5 /W M a x .
0 .2 2. D uty F a ctor, D = t1/t2
0 .1 3 . T JM - T C = P D M * Z JC(t)
0 .05
0 .02 PDM
0 .01
t1
sin g le p u ls e t2
1 0 -2 1 0 -4 1 0 -3 1 0 -2 1 0 -1 100 101
1 0 -5
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Gate Charge Test Circuit & Waveform SFR9230B / SFU9230B
Same Type VGS
50K as DUT Qg
12V 200nF -10V
300nF
VGS VDS Qgs Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RL t on t off
VDD tr
VGS td(on) td(off) tf
RG DUT
VGS 10%
-10V
VDS 90%
Unclamped Inductive Switching Test Circuit & Waveforms
L EAS = --1-- L IAS2 BVDSS
VDS 2 --------------------
ID BVDSS - VDD
tp Time
RG VDD VDD VDS (t)
ID (t)
-10V DUT IAS
BVDSS
tp
2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Peak Diode Recovery dv/dt Test Circuit & Waveforms SFR9230B / SFU9230B
+
VDS
DUT _
I SD
L
Driver Compliment of DUT
RG (N-Channel)
VDD
VGS dv/dt controlled by RG
ISD controlled by pulse period
VGS D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h-- 10V
( Driver ) Gate Pulse Period
I SD Body Diode Reverse Current
( DUT ) IRM
VDS di/dt
( DUT ) IFM , Body Diode Forward Current
VSD
Body Diode VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Package Dimensions SFR9230B / SFU9230B
(0.50) 6.60 0.20 D-PAK0.70 0.20 2.30 0.10
5.34 0.30 0.50 0.10
(0.50)
(4.34)
0.80 0.20 0.60 0.20 2.70 0.20 0.91 0.10 MIN0.55
6.10 0.20
9.50 0.30
MAX0.96 0.76 0.10 0.89 0.10 0.50 0.10
1.02 0.20
2.30TYP 2.30TYP 2.30 0.20
[2.300.20] [2.300.20]
6.60 0.20 (0.70)
(5.34) (0.90)
(5.04) (1.00)
(1.50)
9.50 0.30 (2XR0.25) (0.10) (3.05)
6.10 0.20
2.70 0.20
2002 Fairchild Semiconductor Corporation 0.76 0.10
Dimensions in Millimeters
Rev. B, December 2002
Package Dimensions (Continued) SFR9230B / SFU9230B
(0.50) 6.60 0.20 I-PAK 2.30 0.20
5.34 0.20 0.50 0.10
(0.50)
(4.34)
0.60 0.20 0.70 0.20
6.10 0.20
0.80 0.10 1.80 0.20 16.10 0.30
9.30 0.30
MAX0.96
0.76 0.10 2.30TYP 0.50 0.10
[2.300.20]
2.30TYP
[2.300.20]
2002 Fairchild Semiconductor Corporation Dimensions in Millimeters
Rev. B, December 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production
This datasheet contains preliminary data, and
No Identification Needed Full Production supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
2002 Fairchild Semiconductor Corporation Rev. I1
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