在线预览
器件摘要：
SFR/U9034
BV
DSS
= -60 V
R
DS(on)
= 0.14 Ω
I
D
= -14 A
-60
-14
-9.8
56
±25
505
-14
4.9
-5.5
2.5
49
0.39
- 55 to +150
300
2.55
50
110
--
--
--
ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : 10 µA(Max.) @ V
DS
= -60V
ν Lower R
DS(ON)
: 0.106 Ω (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θJC
R
θJA
R
θJA
o
C/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
*
* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic Value UnitsSymbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
A
o
C
V
DSS
V
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
O
1
O
2
O
3
O
1
O
1
Rev. C

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