S8050
NPN General Purpose Transistors TO-92
1. EMITTER 1
2. BASE 23
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 25 Vdc
Collector-Base Voltage VCBO 40 Vdc
Emitter-Base VOltage VEBO 5.0 Vdc
Collector Current IC 500 mAdc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 25 - Vdc
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 40 - Vdc
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) V(BR)EBO 5.0 - Vdc
Collector Cutoff Current (VCE= 20 Vdc, IB =0) ICE0 - 0.1 uAdc
Collector Cutoff Current (VCB= 40 Vdc, IE=0) ICBO - 0.1 uAdc
Emitter Cutoff Current (VEB= 3.0Vdc, I C =0) IEBO - 0.1 uAdc
WEITRON
http://www.weitron.com.tw
S8050
TO-92 Outline Dimensions unit:mm
E
TO-92
H Dim
Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L E
4.40 4.70
G 3.43 -
H 4.30 4.70
J J 1.270TYP
K K 2.44 2.64
G L 14.10 14.50
B
A
D
WEITRON
http://www.weitron.com.tw
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