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NCE3080K
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE3080K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES Schematic diagram
VDS =30V,ID =80A
RDS(ON) < 6.5m @ VGS=10V
RDS(ON) < 10m @ VGS=5V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application Marking and pin Assignment
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
100% UIS TESTED!
TO-252 top view
Package Marking And Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
- - -
NCE3080K NCE3080K TO-252
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
20 V
Gate-Source Voltage VGS 80 A
50 A
Drain Current-Continuous ID 170 A
Drain Current-Continuous(TC=100) 83 W
Pulsed Drain Current ID (100) 0.56 W/
Maximum Power Dissipation 140 mJ
Derating factor IDM -55 To 175
PD
Single pulse avalanche energy (Note 5) EAS
Operating Junction and Storage Temperature Range TJ,TSTG
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NCE3080K
Thermal Characteristic RJC 1.8 /W
Thermal Resistance,Junction-to-Case(Note 2)
Electrical Characteristics (TA=25unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250A 30 V
Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=20V,VDS=0V 100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A 1 3 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A 6.5
VGS=5V, ID=24A m
10
Forward Transconductance gFS VDS=10V,ID=24A 20 S
Dynamic Characteristics (Note4)
Input Capacitance Clss VDS=15V,VGS=0V, 4700 PF
Output Capacitance
Reverse Transfer Capacitance Coss 500 PF
F=1.0MHz
Crss 345 PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) 20 nS
Turn-on Rise Time tr VDD=10V,ID=30A 15 nS
Turn-Off Delay Time
td(off) VGS=10V,RGEN=2.7 65 nS
Turn-Off Fall Time tf 10 nS
Total Gate Charge Qg VDS=10V,ID=30A, 51 nC
Gate-Source Charge
Gate-Drain Charge Qgs VGS=10V 14 nC
Qgd 11 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=24A 0.85 1.2 V
Diode Forward Current (Note 2) IS 80 A
Reverse Recovery Time trr TJ = 25C, IF = 80A 32 50 nS
Reverse Recovery Charge
Qrr di/dt = 100A/s(Note3) 12 20 nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=15V,VG=10V,L=1mH,Rg=25
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Test circuit NCE3080K
1EAS test Circuits
2Gate charge test Circuit:
3Switch Time Test Circuit
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NCE3080K
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
ID- Drain Current (A) Normalized On-Resistance
Vds Drain-Source Voltage (V) TJ-Junction Temperature()
Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A) Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V) Qg Gate Charge (nC)
Figure 2 Transfer Characteristics Figure 5 Gate Charge
Rdson On-Resistance Normalized Is- Reverse Drain Current (A)
ID- Drain Current (A) Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward
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NCE3080K
C Capacitance (pF) Normalized BVdss
Vds Drain-Source Voltage (V) TJ-Junction Temperature()
Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
Vds Drain-Source Voltage (V) TJ-Junction Temperature()
Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperatur
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-252-2L Package Information
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NCE3080K
ATTENTION:
Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer's products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
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