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MX1N5369DE3TR

器件型号:MX1N5369DE3TR
器件类别:分立半导体    二极管   
厂商名称:Microsemi
厂商官网:https://www.microsemi.com
标准:
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器件描述

Zener Diode, 51V V(Z), 1%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

参数
是否Rohs认证符合
包装说明ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
针数2
Reach Compliance Codeunknow
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
参考标准MIL-19500
标称参考电压51 V
表面贴装NO
技术ZENER
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差1%
工作测试电流25 mA
Base Number Matches1

文档预览

1N5333B thru 1N5388B, e3
Silicon 5 Watt Zener Diodes
SCOTTSDALE DIVISION
DESCRIPTION
The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt
Zeners provides voltage regulation in a selection from 3.3 to 200 volts with
different tolerances as identified by specific suffix letter on the part number.
These plastic encapsulated Zeners have moisture classification of Level 1
with no dry pack required and are also available in various military
equivalent screening levels by adding a prefix identifier as also described in
the Features section. They may be operated at high maximum dc currents
with adequate heat sinking with their comparatively low thermal resistance
design. Microsemi also offers numerous other Zener products to meet
higher and lower power applications.
APPEARANCE
WWW .
Microsemi
.C
OM
T-18
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
JEDEC registered 1N5333 to 1N5388B
Zener voltage available 3.3V to 200V
Standard voltage tolerances are plus/minus 5% with B
suffix and 10 % with A suffix identification
Tight tolerances available in plus or minus 2% or 1%
with C or D suffix respectively
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are available
by adding MQ, MX, or MV prefixes respectively to
part numbers.
Surface mount equivalents available as SMBJ5333 to
SMBJ5388B, or SMBG5333B to SMBG5388B
RoHS Compliant devices available by adding e3 suffix
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current and
temperature range
Wide selection from 3.3 to 200 V
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
Withstands high surge stresses
Minimal changes of voltage versus current as
specified by voltage regulation (ΔV
Z
)
High specified maximum current (I
ZM
) when
adequately heat sunk
Moisture classification is Level 1 per IPC/JEDEC J-
STD-020B with no dry pack required
MAXIMUM RATINGS
Power dissipation at 25
º
C: 5.0 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
º
C to
+150
º
C
Thermal Resistance: 25
º
C/W junction to lead at 3/8
(10 mm) lead length from body, or 85
º
C/W junction
to ambient when mounted on FR4 PC board (1oz
Cu) with 4 mm
2
copper pads and track width 1
mm, length 25 mm
Steady-State Power: 5 watts at T
L
< 25
o
C 3/8 inch
(10 mm) from body, or 1.47 watts at T
A
= 25
º
C
when mounted on FR4 PC described for thermal
resistance (also see Figure 1)
Forward voltage @1.0 A: 1.2 volts (maximum)
Solder Temperatures: 260
º
C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: Leads, Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750, method 2026
POLARITY: Cathode indicated by band. Diode to
be operated with the banded end positive with
respect to the opposite end.
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.7 grams
See package dimensions on last page
1N5333B thru 1N5388B, e3
Copyright
©
2008
8-06-2008 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5333B thru 1N5388B, e3
Silicon 5 Watt Zener Diodes
SCOTTSDALE DIVISION
*ELECTRICAL CHARACTERISTICS @ 25
o
C
TYPE
NUMBER
REGULATOR
VOLTAGE
TEST
CURRENT
MAXIMUM
DYNAMIC
IMPEDANCE
MAXIMUM
REVERSE
CURRENT
I
R
TEST
VOLTAGE
WWW .
Microsemi
.C
OM
(V
Z
)
V
(I
ZT
)
mA dc
380
350
320
290
260
240
220
200
200
175
175
150
150
150
125
125
100
100
100
75
75
70
65
65
65
50
50
50
50
50
40
40
30
30
30
25
25
20
20
20
20
20
15
15
15
12
12
10
10
8.0
8.0
8.0
8.0
5.0
5.0
5.0
(Z
Z
)
(A&B Suffix)
(V
R
)
(Non-Suffix &
A Suffix)
I
R
TEST
VOLTAGE
(I
R
)
μA
300
150
50
10
5.0
1.0
1.0
1.0
1.0
10
10
10
10
7.5
5.0
5.0
2.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
(V
R
)
(B,C,D Suffix)
MAXIMUM
REGULATOR
CURRENT
(I
ZM
)
(B,C,D Suffix)
MAXIMUM
DYNAMIC KNEE
IMPEDANCE
Z
ZK
@ 1.0 mA
(A,B,C,D Suffix)
MAXIMUM
SURGE
CURRENT
MAXIMUM
VOLTAGE
REGULATION
(I
ZSM
)
AMPS
20
18.7
17.6
16.4
15.3
14.4
13.4
12.7
12.4
11.5
10.7
10
9.5
9.2
8.6
8.0
7.5
7.0
6.7
6.3
6.0
5.8
5.5
5.3
5.1
4.7
4.4
4.3
4.1
3.9
3.7
3.5
3.3
3.1
2.8
2.7
2.5
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.2
1.1
1.1
1.0
1.0
0.9
0.9
(ΔV
Z
)
(A,B,C,D
Suffix)
OHMS
3.0
2.5
2.0
2.0
2.0
1.5
1.0
1.0
1.0
1.0
1.5
1.5
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
3.0
3.0
3.5
3.5
4.0
5.0
6.0
8.0
10
11
14
20
25
27
35
40
42
44
45
65
75
75
90
125
170
190
230
330
350
380
430
450
480
V
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.0
4.9
5.4
5.9
6.25
6.6
7.2
8.0
8.6
9.4
10.1
10.8
11.5
12.2
13
13.7
14.4
15.8
17.3
18
19.4
20.1
21.6
23.8
25.9
28.1
31
33.8
36.7
40.3
43
44.6
49
54
59
63
65.5
72
79.2
86.4
93.6
101
108
115
122
130
137
144
V
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.0
5.2
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.9
10.6
11.5
12.2
12.9
13.7
14.4
15.2
16.7
18.2
19
20.6
21.2
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
45.5
47.1
51.7
56
62.2
66
69.2
76
83.6
91.2
98.8
106
114
122
129
137
144
152
mA
1440
1320
1220
1100
1010
930
865
790
765
700
630
580
545
520
475
430
395
365
340
315
295
280
264
250
237
216
198
190
176
170
158
144
132
122
110
100
93
86
79
76
70
63
58
54.5
52.5
47.5
43
39.5
36.6
34
31.6
29.4
28
26.4
25
23.6
OHMS
400
500
500
500
450
400
400
300
200
200
200
200
200
150
125
125
125
100
75
75
75
75
75
75
75
75
100
110
120
130
140
150
160
170
190
210
230
280
350
400
500
620
720
760
760
800
1000
1150
1250
1500
1500
1650
1750
1750
1850
1850
VOLTS
0.85
0.80
0.54
0.49
0.44
0.39
0.25
0.19
0.10
0.15
0.15
0.20
0.20
0.22
0.22
0.25
0.25
0.25
0.25
0.25
0.30
0.35
0.40
0.40
0.40
0.45
0.55
0.55
0.60
0.60
0.60
0.60
0.65
0.65
0.70
0.80
0.90
1.00
1.20
1.35
1.50
1.60
1.80
2.00
2.20
2.30
2.50
2.50
2.50
2.50
3.00
3.00
3.00
4.00
5.00
5.00
1N5333B
1N5334B
1N5335B
1N5336B
1N5337B
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
1N5388B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
87
91
100
110
120
130
140
150
160
170
180
190
200
1N5333B thru 1N5388B, e3
*JEDEC Registered Data.
NOTE 1:
Devices listed above with B suffix have ±5% tolerance, A suffix designates ±10% tolerance, C suffix designates ±2%
tolerance, and D suffix designates ±1% tolerance. No suffix designates ±20%.
o
o
NOTE 2:
Zener voltage (Vz) is measured at T
L
= 25 C (+8, -2 C). Voltage measurement performed at 40 ±10 milliseconds
after application of dc current.
NOTE 3:
The zener impedance is derived from 1 kHz ac voltage resulting from an ac current modulation having an rms value
equal to 10% of the dc zener current (I
ZT
or I
ZK
) superimposed on I
ZT
or I
ZK
. See Micro Note 202 for zener impedance
variation with different operating currents.
NOTE 4:
The maximum current (I
ZM
) shown is for a ±5% tolerance devices. The I
ZM
for other tolerances can be calculated using
the formula: I
ZM
= P/V
ZM
where V
ZM
is the V
Z
at the high end of the voltage tolerance specified and P is the rated power
for the method of mounting.
NOTE 5:
The surge current (I
ZSM
) is specified as the maximum peak of a non-recurrent half-sine wave of 8.3 ms duration.
NOTE 6:
Voltage regulation (ΔV
Z
) is the difference between the voltage measured at 10% and 50% of I
ZM
.
Copyright
©
2008
8-06-2008 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N5333B thru 1N5388B, e3
Silicon 5 Watt Zener Diodes
SCOTTSDALE DIVISION
OUTLINE AND CIRCUIT
WWW .
Microsemi
.C
OM
Pd, Maximum Power
Dissipation (Watts)
T
L
T
A
on FR4
PC board
T
L
, Lead temperature ( C) 3/8” from body. or
T
A
ambient temperature on FR4 PC Board
o
FIGURE 1
Power Derating Curve
FIGURE 2
Typical Capacitance vs.
Reverse Voltage for 5 Watt Zeners
PACKAGE DIMENSIONS
1N5333B thru 1N5388B, e3
FIGURE 3
Typical Capacitance vs.
Reverse Voltage for 5 Watt Zeners
Copyright
©
2008
8-06-2008 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Manufacture Diodes, IGBTs, LED Driver, Small Signal & Analog, RF Power,...verter, Power Modules, RF Transistors, Power Over Ethernet, PoE, PoE IC
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file://///blrwnapp002/Sourcing/Automation/Automation_CPR/05162011/MSSD/1N5333B.htm [18-May-2011 10:01:38 AM]

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