KP110
Absolute Pressure Sensor IC KP110
Programmable Temperature Compensation and Calibration
On-Chip Signal Conditioning
Low Cost Bare Die Version
Data Sheet
357
Features
Ratiometric analog output
Programmable transfer function performed
by customer
High accuracy over a large temperature range
up to 1.2 kPa (10 ... 85 C)
CMOS compatible surface micromachining
Bare die
Specific transfer functions programmable
Broken wire detection
Type Ordering Code Minimum Order Quantity
KP110 Q62705-K432 1 Wafer
Product Description
The KP110 is a miniaturized absolute pressure sensor IC based on the capacitive
principle. It is surface micromachined with a monolithic integrated signal conditioning
circuit realized in the state-of-the-art 0.8 m BiCMOS technology. As the KP110 is a high
precision IC for cost critical solutions. High accuracy and high sensitivity enable the
dedication in automotive applications as well as consumer products.
In the automotive field the manifold air pressure (MAP) and barometric air pressure
(BAP) are important parameters to compute the air-fuel ratio provided to the engine and
for controlling spark advance to optimize engine efficiency.
Data Book 1 2003-05
KP110
Pad Configuration
(top view of die)
Figure 1
Pad Definitions and Functions
Pad No. Symbol Function
1 SERIAL_CLK/ External clock for communication/
PROG_VOLT Programming voltage
2 DTA_IN Serial in
3 DTA_OUT Serial out
4 VCC Supply voltage
5 (GND) Alternative ground pad
6 VOUT Analog pressure signal output
7 GND 0 V circuit ground potential
The pads described in the shaded rows of the table above are used during calibration only.
Data Book 2 2003-05
KP110
Die Data
Semiconductor material: Silicon
Surface passivation: Silicon-Nitride
Die thickness: 675 m
Die dimension: 4.30 mm x 3.34 mm
Pad metallisation: AlSiCu
Size of the bondpads (area free of passivation): 200 x 200 m
Rear side metallisation of the chips: no used
The rear side of the chip is electrical connected with GND-Pad
Figure 2 Functional Block Diagram
Data Book 3 2003-05
KP110
Functional Description
Digital Programming Interface
The KP110 digital interface is a 3 wire interface consisting of Data_In, Data_Out and
Clock. A write cycle needs 13 Clock cycles. With the first 12 rising edges of the Clock the
signal on Data_In is clocked into a shift register. The first 3 bits are interpreted as a
register address, the last 9 as data bits. The address and the data word are starting with
the LSB, respectively. During the falling edges of the first 11 Clock cycles the Data_In
must be low. The falling edge of the 12th Clock cycle enables the write frame, at this time
Data_In must be high. A 13th Clock cycle is needed for internal purposes, the signal at
Data_In is ignored.
Simultaneously to the write cycle, a read cycle at Data_Out is performed. The signal at
Data_Out is structured the same way as at Data_In, i.e. 3 address bits and 9 data bits.
The selected register for reading depends on the content of the TESTREG register.
The first valid bit at Data_Out appears with the 13th rising edge of the Clock of the
previous write frame.
The following figure shows the timing diagram:
Figure 3 Timing Diagram
Data Book 4 2003-05
KP110
The table below shows the internal registers of the KP110. For the shaded registers
PROM cells exist. The PROM cells are used for permanent programming of the
calibration data.
In addition to the registers in the table below a 12 x 9 bit RAM table exists for the
linearization and definition of the analog pressure signal. This RAM table is also
overlayed by PROM cells.
To write a 9 bit word to the RAM table at first the data content must be written into the
MEMDAT register. In a further write cycle the desired word is addressed by the 4 LSBs
of the MEMCTL register.
Register Function
MEMDAT Data bit 0 to 9
MEMCTL Selection of register of linearization table
GLOBOFF Global offset compensation
FUSE_NR Fuse number
TESTREG Selection of register for read cycle
TGAIN Temperature gain compensation (linear and square)
TOFFL Linear temperature offset compensation
TOFFQ Square temperature offset compensation
MODEREG Selection of registers for programming of PROM
The shaded registers in the table are overlayed with PROM
Nonvolatile Memory
Each PROM cell consists of a thin polysilicon wire located in a small evacuated cavity.
The cells are called HR-fuses. In order to write a logic "1" to a HR-cell the wire has to be
cut with a current pulse. Since the current can reach up to 100 mA only a single HR-fuse
can be programmed at a time.
The desired bit within a HR-fuse register is addressed by a register called FUSE_NR. In
case of the linearization table the desired PROM register itself is addressed by the
MEMCTL-register. In order to program the GLOBOFF, TGAIN, TOFFL and TOFFQ
register the MODREG-register is used for addressing.
After the correct addressing of PROM register and bit a fuse pulse has to be applied to
pad 1. The requirements for the pulse voltage, length and slew rate are given in the
electrical characteristics.
The exact sequences for RAM/PROM reading/writing are available on request.
Data Book 5 2003-05
KP110
Calibration
The GLOBOFF register is needed to adjust the sensor cell to the internal A/D converter
range. The TGAIN, TOFFL and TOFFQ registers are used for the temperature
compensation. These registers together with the linearization table have to be
programmed to achieve the full sensor performance.
For a proper calibration of the compensation registers and the linearization table it is
proposed to measure the sensor at a minimum of two different temperatures (e.g. 25 C,
100 C) and 3 pressures, depending on the desired pressure range. To set up an
appropriate calibration sequence support of the IFX sensor application group is
available.
Maximum Ratings
Parameter Symbol Limit Values Unit
min. max.
Supply voltage VCC 0.3 6.5 V
Supply voltage1)
Supply current VCC 6.52) 16.5 V
Ambient temperature
Storage temperature ICC 10 mA
Burst pressure
Voltage at pad DTA_IN TMAX 40 140 C
Voltage at pad SERIAL_CLK/
PROG_VOLT during clock mode TS 60 150 C
pBURST 400 kPa
VDTA_IN 0.2 3.2 V
VSERIAL_CLK 0.2 3.2 V
Voltage at pad SERIAL_CLK/ VPROG 0.2 12 V
PROG_VOLT during fuse mode
"H" output peak current at pad DTA_OUT IOHP 2 mA
"L" output peak current at pad DTA_OUT IOLP 2 mA
1) 1h@70 C
2) Reverse polarity; ICC < 300 mA
Note: Stresse above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Data Book 6 2003-05
KP110
ESD Protection
Human Body Model (HBM) tests according to:
Standard EIA/JESD22-A114-B HBM (covers MIL STD 883D)
Parameter Symbol Limit Values Unit Notes
ESD-Protection VESD min. max. R = 1.5 k,
C = 100 pF
Pins VCC, GND, VOUT kV
2
Calibration Pins 1
Operating Range
VCC = 5.0 V, GND = 0 V, TA = -40 C to +140 C, unless otherwise specified
Parameter Symbol Limit Values Unit
min. max.
Supply voltage1) VCC 4.5 5.5 V
Output current (pad 6) Sink2) IOUT 0.25 mA
Source2) 0.25 mA
Operating temperature TA 40 140 C
Minimum rated pressure pN, MIN 10 50 kPa
Maximum rated pressure pN, MAX 102 120 kPa
Pressure span PSPAN 70 105 kPa
Lifetime tLT 15 year
1) The output of the sensor is ratiometric to the supply voltage VCC within its specified range of 4.50 to 5.50 V.
2) Sink: Current into device. Source: Current driven by device
Electrical Characteristics
VCC = 5.0 V, GND = 0 V, TA = -40 C to +140 C, unless otherwise specified
Parameter Symbol Limit Values Unit
Output voltage at min. rated pressure1) VOUT, MIN min. typ. max.
Output voltage at max. rated pressure1) VOUT, MAX 0.25 0.5 V
Overall accuracy ACC 4.50 4.85 V
see
below kPa
Ratiometricity2) Rat -25 25 mV
Response time3)
tR 5 ms
Data Book 7 2003-05
KP110
Electrical Characteristics (cont'd)
VCC = 5.0 V, GND = 0 V, TA = -40 C to +140 C, unless otherwise specified
Parameter Symbol Limit Values Unit
min. typ. max.
Output ripple @ f > 1 kHz 10 15 mVpp
@ f < 1 kHz
5 7.5 mVpp
Stabilization time4) tS 20 ms
Power up time tUP 5 ms
1) The output of the sensor is ratiometric to the supply voltage VCC within its specified range of 4.50 to 5.50 V.
2) Definition:
Rat = VOUT(@VCC) VOUT(@5 V ) V-----C----C-
5V
for VOUT in the range of 0.1 VDD to 0.9 VCC
and VCC in the range of 4.50 V to 5.50 V
Ratiometric signal error is not included in the overall accuracy!
3) Response time is defined as the time for the incremental change in the output to go from 10% to 90% of its
final value when subjected to a specified step change in pressure.
4) Stabilization time is defined as the time required for the product to meet the specified output voltage after the
pressure has been stabilized.
Input Pad SERIAL_CLK / PROG_VOLT
Input voltage (fuse mode) VPROGIN 9 V
Input capacitance
Input current (clock mode) CSERIAL_CLK 160 pF
Input current (fuse mode) for 10 ms
"H" Input voltage (clock mode) ICKLIN 5 360 A
"L" Input voltage (clock mode)
Input hysteresis IVPROG 10 100 mA
VHSERIAL_CLK 2.2 V
VLSERIAL_CLK 0.5 V
VCINHYST 480 mV
Input Pad DTA_IN CDTA_IN 2.5 pF
Input capacitance
Input current IDTA_IN 360 A
"H" Input voltage
"L" Input voltage VHDTA_IN 2.2 3.2 V
Input hysteresis
VLDTA_IN 0.5 V
VSINHYST 480 mV
Data Book 8 2003-05
KP110
Electrical Characteristics (cont'd)
VCC = 5.0 V, GND = 0 V, TA = -40 C to +140 C, unless otherwise specified
Parameter Symbol Limit Values Unit
min. typ. max.
Output Pad DTA_OUT
"H" output voltage (IOH = 1 mA) VOH 2.4 V
"L" output voltage (IOL = -1 mA) VOL 0.3 V
Timing and Tolerances
Clock frequency SERIAL_CLK fCLK 1 250 kHz
CLKS "H" pulse width tWH 2 s
CLKS "L" pulse width tWL 2 s
DTA_IN setup time (At Pad DTA_IN) tISU 500 ns
DTA_IN hold time (At Pad DTA_IN) tICH 500 ns
DTA_OUT output delay time tOD 0 200 ns
(At Pad DTA_OUT)
ENABLE setup time (At Pad DTA_IN) tENS 500 ns
ENABLE hold time (At Pad DTA_IN) tENH 500 ns
PROG_VOLT setup time tVPD 1 s
(At Pad SERIAL_CLK)
PROG_VOLT hold time tVPH 10 ms
(At Pad SERIAL_CLK)
PROG_VOLT slew rate SR 100 V/s
Data Book 9 2003-05
KP110
Transfer Function
The sensor can be calibrated with a linear transfer characteristic between the applied
pressure and the output signal:
VOUT = VCC (a p + b)
The output is ratiometric. The gain a and the offset b can be calibrated. A feasible
transfer function for the KP110 is for example:
VOUT = 5.000 V (0.0106 p 0.32666)
With the parameters a and b the following calibration is adjusted:
pN, MIN = 40 kPa VOUT = 0.5 V and
pN, MAX = 115 kPa VOUT = 4.5 V (@VCC = 5 V)
Figure 4 Possible Transfer Function of the KP110
The output circuit has a low pass filter (min. 1st .Order) with a cut off frequency greater
than 500 Hz. The output circuit is protected against short circuit to VDD and GND.
Data Book 10 2003-05
KP110
Accuracy
Accuracy is the deviation in actual output from nominal output over the entire pressure
and temperature range according to figure below due to all sources of error including the
following:
Pressure:
Output deviation from target transfer function over the specified pressure range.
Temperature:
Output deviation over the temperature range.
Aging during operating time
The error band is determined by a continuous line through four relevant break points:
Break Point (C) Typical Accuracy (kPa)
40 2.4
10 1.2
85 1.2
140 2.4
Note: The gained output signal accuracy depends largely on the quality of the mounting
and calibration process accomplished by the customer!
Figure 5 Overall Accuracy over Temperature
Data Book 11 2003-05
KP110
Application Circuit
It is recommended, that the circuit of the pressure sensor IC is protected against
overload voltage and electro magnetic influences (like shown in Figure 6).
The output circuitry acts as a low pass decoupling filter between the output of the sensor
IC and the A/D input of the C.
Note: Circuitries of customer specific applications may deviate from this circuitry.
Figure 6 Typical Application Circuit of the KP110
Component Range Typ. value
59 k
R1 20 k < R1 < 100 k 47 k
R2 3.9 k < R1 < 100 k 0 nF
C1 0 < C1 < 100 nF 100 nF
C2 33 nF < C2 < 100 nF
Data Book 12 2003-05
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