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JAN1N3822AUR-1

器件型号:JAN1N3822AUR-1
器件类别:分立半导体    二极管   
厂商名称:Microsemi
厂商官网:https://www.microsemi.com
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器件描述

3.6 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB

参数
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码DO-213AB
包装说明O-LELF-R2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-213AB
JESD-30 代码O-LELF-R2
JESD-609代码e0
湿度敏感等级1
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1 W
认证状态Qualified
参考标准MIL-19500/115K
标称参考电压3.6 V
表面贴装YES
技术ZENER
端子面层Tin/Lead (Sn/Pb)
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差5%
工作测试电流69 mA
Base Number Matches1

文档预览

• 1N3821AUR-1 thru 1N3828AUR-1 AVAILABLE IN
JAN, JANTX AND JAN-
TXV
PER MIL-PRF-19500/115
• LEADLESS PACKAGE FOR SURFACE MOUNT
• DOUBLE PLUG CONSTRUCTION
1N3821AUR-1
thru
1N3828AUR-1
and
CDLL3821 thru CDLL 3828A
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 1 watt @ +TEC = 125°C
Power Derating: 20 mW / °C above TEC = 125°C
Forward Voltage @ 200mA = 1.2 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
CDI
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
VZ @ 1ZT
(NOTE 3)
VOLTS
CDLL3821
CDLL3821A
CDLL3822
CDLL3822A
CDLL3823
CDLL3823A
CDLL3824
CDLL3824A
CDLL3825
CDLL3825A
CDLL3826
CDLL3826A
CDLL3827
CDLL3827A
CDLL3828
CDLL3828A
3.3
3.3
3.6
3.6
3.9
3.9
4.3
4.3
4.7
4.7
5.1
5.1
5.6
5.6
6.2
6.2
ZENER
TEST
CURRENT
1ZT
ZZT @ 1ZT
ZZK @ 1ZK=1mA
(NOTE 2)
OHMS
400
400
400
400
400
400
400
400
500
500
550
550
600
600
700
700
MAXIMUM ZENER IMPEDANCE
MAX. DC
ZENER
CURRENT
1ZM
MAX. REVERSE
LEAKAGE CURRENT
lR @ VR
mA
76
76
69
69
64
64
58
58
53
53
49
49
45
45
41
41
OHMS
10
10
10
10
9
9
9
9
8
8
7
7
5
5
2
2
mA
276
276
252
252
238
238
213
213
194
194
178
178
162
162
146
146
µ
A
100
100
75
75
25
25
5
5
5
5
3
3
3
3
3
3
VOLTS
1
1
1
1
1
1
1
1
1
1
1
1
2
2
3
3
MILLIMETERS
DIM MIN MAX
D
2.39
2.66
F
0.41
0.55
G
4.80
5.20
G1
4.11 REF.
S
0.03 MIN.
INCHES
MIN MAX
.094 .105
.016 .022
.189 .205
.159 REF.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE:
DO-213AB, Hermetically sealed
glass case. (MELF, LL41)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC): 50
°
C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZO
JX): 15
°
C/W maximum
POLARITY:
Diode to be operated with the
banded (cathode) end positive.
MOUNTING POSITION:
Any.
NOTE 1
NOTE 2
NOTE 3
No suffix = + 10% tolerance on nominal Zener voltage, suffix “A” signifies +5%, "C" suffix
signifies + 2% and "D" suffix signifies + 1%.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to
10% of 1ZT.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion (COE)
Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
109
1N3821AUR-1 thru 1N3828AUR-1
and
CDLL3821A thru CDLL3828A
FIGURE 2
1000
800
600
400
200
0
0
25
50
75
100
125
150
175
Pd, Rated Power
Dissipation (mW)
TEC , End cap temperature (°C)
POWER DERATING CURVE
1000
ZZT, Zener Impedance (OHMS)
100
10
1
.1
1.0
10
100
OPERATING CURRENT lZT (mA)
FIGURE 3
ZENER IMPEDANCE
VS.
OPERATING CURRENT
110

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