IRLR/U2905
HEXFET
®
Power MOSFET
S
D
G
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.4
R
θJA
Case-to-Ambient (PCB mount)** ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 0.027Ω
I
D
= 42A
Description
12/8/00
www.irf.com 1
D-Pak
TO-252AA
I-Pak
TO-251AA
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR2905)
l Straight Lead (IRLU2905)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 42
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 30 A
I
DM
Pulsed Drain Current 160
P
D
@T
C
= 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 210 mJ
I
AR
Avalanche Current 25 A
E
AR
Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
PD- 91334E