04/21/09
www.irf.com 1
HEXFET
G174
G32Power MOSFET
S
D
G
G80G68G32G45 96230
IRLP3034PbF
GDS
Gate Drain Source
Applications
G108G32DC Motor Drive
G108G32High Efficiency Synchronous Rectification in SMPS
G108G32Uninterruptible Power Supply
G108G32High Speed Power Switching
G108G32Hard Switched and High Frequency Circuits
Benefits
G108 Optimized for Logic Level Drive
G108 Very Low R
DS(ON)
at 4.5V V
GS
G108 Superior R*Q at 4.5V V
GS
G108 Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
G108 Fully Characterized Capacitance and Avalanche
SOA
G108 Enhanced body diode dV/dt and dI/dt Capability
G108G32Lead-Free
TO-247AC
IRLP3034PbF
V
DSS
40V
R
DS(on)
typ.
1.4mc58
max. 1.7mc58
I
D (Silicon Limited)
327Ac99
I
D (Package Limited)
195A
S
D
G
D
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM Pulsed Drain Current c100
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS Gate-to-Source Voltage
V
dv/dt Peak Diode Recovery c102 V/ns
T
J Operating Junction and
T
STG Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy c101
mJ
I
AR
Avalanche Current c100
A
E
AR
Repetitive Avalanche Energy c100
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC Junction-to-Case c106
––– 0.44
R
θCS Case-to-Sink, Flat, Greased Surface
0.24 –––
R
θJA Junction-to-Ambient
––– 40
See Fig. 14, 15, 22a, 22b,
A
°C
°C/W
224
341
4.6
±20
2.3
10lbfc120in (1.1Nc120m)
-55 to + 175
300
Max.
327c99
232 c99
1308
195