Parameter Max. Units
V
DS
Drain- Source Voltage -12 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -4.5V ±8.0
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ -4.5V ±7.0 A
I
DM
Pulsed Drain Current G129 ±70
P
D
@T
C
= 25°C Power Dissipation 1.5
P
D
@T
C
= 70°C Power Dissipation 0.96
Linear Derating Factor 0.01 W/°C
V
GS
Gate-to-Source Voltage ± 8.0 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
02/06/06
IRF7702PbF
HEXFET
G174
G32Power MOSFET
Parameter Max. Units
R
θJA
Maximum Junction-to-AmbientG131 83 °C/W
Thermal Resistance
Description
G65G98G115G111G108G117G116G101G32G77G97G120G105G109G117G109G32G82G97G116G105G110G103G115
G87
www.irf.com 1
G108 Ultra Low On-Resistance
G108 -1.8V Rated
G108G32G32 P-Channel MOSFET
G108 Very Small SOIC Package
G108 Low Profile ( < 1.1mm)
G108 Available in Tape & Reel
G108 Lead-Free
HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
V
DSS
R
DS(on)
max I
D
0.014@V
GS
= -4.5V -8.0A
-12V 0.019@V
GS
= -2.5V -7.0A
0.027@V
GS
= -1.8V -5.8A
c23c3c32c3c42
c22c3c32c3c54
c21c3c32c3c54
c20c3c32c3c39
c20
c21
c22
c23
c42
c39
c54
c24
c25
c26
c27
c27c3c32c3c39
c26c3c32c3c54
c25c3c32c3c54
c24c3c32c3c39
PD-96027