10/16/09
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HEXFET
G174
G32Power MOSFET
S
D
G
IRLB3036GPbF
GDS
Gate Drain Source
Applications
G108G32DC Motor Drive
G108G32High Efficiency Synchronous Rectification in SMPS
G108G32Uninterruptible Power Supply
G108G32High Speed Power Switching
G108G32Hard Switched and High Frequency Circuits
Benefits
G108 Optimized for Logic Level Drive
G108 Very Low R
DS(ON)
at 4.5V V
GS
G108 Superior R*Q at 4.5V V
GS
G108 Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
G108 Fully Characterized Capacitance and Avalanche
SOA
G108 Enhanced body diode dV/dt and dI/dt Capability
G108G32Lead-Free
G108G32Halogen-Free
TO-220AB
IRLB3036GPbF
V
DSS
60V
R
DS(on)
typ.
1.9mΩ
max. 2.4mΩ
I
D (Silicon Limited)
270Ac99
I
D (Package Limited)
195A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM Pulsed Drain Current
c100
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS Gate-to-Source Voltage
V
dv/dt Peak Diode Recovery c102 V/ns
T
J Operating Junction and
T
STG Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy c101
mJ
I
AR
Avalanche Current c100
A
E
AR
Repetitive Avalanche Energy c103
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC Junction-to-Case c106
––– 0.40
R
θCS Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θJA Junction-to-Ambient
––– 62
-55 to + 175
300
Max.
270c99
190c99
1100
195
See Fig. 14, 15, 22a, 22b
A
°C
°C/W
290
380
8.0
±16
2.5
10lbc120in (1.1Nc120m)
G80G68G32G45 96275