Absolute Maximum Ratings
Parameter Units
ID @ VGS = -4.5V, TC = 25°C Continuous Drain Current -0.53
I
D
@ V
GS
= -4.5V, T
C
= 100°C Continuous Drain Current -0.33
I
DM
Pulsed Drain Current G129 -2.12
P
D
@ T
C
= 25°C Max. Power Dissipation 0.57 W
Linear Derating Factor 0.0045 W/°C
V
GS
Gate-to-Source Voltage ±10 V
E
AS
Single Pulse Avalanche Energy G130 33.5 mJ
I
AR
Avalanche Current G129 -0.53 A
E
AR
Repetitive Avalanche Energy G129 0.06 mJ
dv/dt Peak Diode Recovery dv/dt G131 -4.4 V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (for 5s)
Weight 43 (Typical) mg
°C
A
G48G57G47G49G53G47G49G48
www.irf.com 1
For footnotes refer to the last page
Features:
G110G325V CMOS and TTL Compatible
G110 Fast Switching
G110 Single Event Effect (SEE) Hardened
G110 Low Total Gate Charge
G110 Simple Drive Requirements
G110 Ease of Paralleling
G110 Hermetically Sealed
G110 Light Weight
G110 Complimentary P-Channel Available -
IRHLUB770Z4, IRHLUBN770Z4
IRHLUBC770Z4 & IRHLUBCN770Z4
International Rectifier’s R7
TM
Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments. The threshold voltage remains within acceptable
operating limits over the full operating temperature and post
radiation. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as current boost
low signal source in PWM, voltage comparator and operational
amplifiers.
Pre-Irradiation
UB
(SHIELDED METAL LID)
RADIATION HARDENED JANSR2N7626UB
LOGIC LEVEL POWER MOSFET 60V, P-CHANNEL
SURFACE MOUNT (UB) REF: MIL-PRF-19500/745
G153
TECHNOLOGY
IRHLUB7970Z4
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHLUB7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UB
IRHLUB7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UB
Product Summary
Refer to Page 11 for 3 Additional Part Numbers -
IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4
PD-94764L