www.irf.com 1
12/18/08
IRFS5615PbF
IRFSL5615PbF
NotesG32G129G32through G134 are on page 2
G68G73G71G73G84G65G76G32G65G85G68G73G79G32G77G79G83G70G69G84
Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low R
DSON
for Improved Efficiency
• Low Q
G
and Q
SW
for Better THD and Improved
Efficiency
• Low Q
RR
for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
• Can Deliver up to 300W per Channel intoG324ΩG32Load in
Half-Bridge Configuration Amplifier
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
S
D
G
GDS
Gate Drain Source
S
D
G
D
D
S
G
D
2
Pak
IRFS5615PbF
TO-262
IRFSL5615PbF
G80G68G32G45G32G57G54G50G48G52
V
DS
150 V
R
DS(ON)
typ. @ 10V 34.5 mc58
Q
g
typ. 26 nC
Q
sw
typ. 11 nC
R
G(int)
typ. 2.7 Ω
T
J
max 175 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current c99
P
D
@T
C
= 25°C
Power Dissipation c102
P
D
@T
C
= 100°C
Power Dissipation c102
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case c102
––– 1.045
R
θJA
Junction-to-Ambient (PCB Mount) c104
––– 40
°C/W
°C
A
V
W
144
72
0.96
-55 to + 175
300
Max.
24
140
±20
150
33