11/7/08
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HEXFET
G174
G32Power MOSFET
Benefits
G108 Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
G108 Fully Characterized Capacitance and Avalanche
SOA
G108 Enhanced body diode dV/dt and dI/dt Capability
G108G32Lead-Free
Applications
G108G32High Efficiency Synchronous Rectification in SMPS
G108G32Uninterruptible Power Supply
G108G32High Speed Power Switching
G108G32Hard Switched and High Frequency Circuits
S
D
G
GDS
Gate Drain Source
IRFS4115-7PPbF
G80G68G32G45G57G55G49G52G55
G68
G50
G80G97G107G32G55G32G80G105G110
G71
G83
G83
G68
G83
G83
G83
V
DSS
150V
R
DS(on)
typ.
10.0mG58
max. 11.8mG58
I
D
105A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current G99
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage V
dv/dt
Peak Diode Recovery G101
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy G100
mJ
I
AR
Avalanche Current G99
A
E
AR
Repetitive Avalanche Energy G102
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case G106G107 ––– 0.40 °C/W
R
θJA
Junction-to-Ambient (PCB Mount) G105G106 ––– 40
300
Max.
105
74
420
230
See Fig. 14, 15, 22a, 22b,
380
32
-55 to + 175
± 20
2.5
10lbG120in (1.1NG120m)