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09/14/07
IRFP4232PbF
NotesG32G129G32through G133 are on page 8
Description
G84G104G105G115G32HEXFET
®
Power MOSFETG32G105G115G32G115G112G101G99G105G102G105G99G97G108G108G121G32G100G101G115G105G103G110G101G100G32G102G111G114G32G83G117G115G116G97G105G110G59G32G69G110G101G114G103G121G32G82G101G99G111G118G101G114G121G32G38G32G80G97G115G115G32G115G119G105G116G99G104
G97G112G112G108G105G99G97G116G105G111G110G115G32G105G110G32G80G108G97G115G109G97G32G68G105G115G112G108G97G121G32G80G97G110G101G108G115G46G32G84G104G105G115G32MOSFETG32G117G116G105G108G105G122G101G115G32G116G104G101G32G108G97G116G101G115G116G32G112G114G111G99G101G115G115G105G110G103G32G116G101G99G104G110G105G113G117G101G115G32G116G111G32G97G99G104G105G101G118G101
G108G111G119G32G111G110G45G114G101G115G105G115G116G97G110G99G101G32G112G101G114G32G115G105G108G105G99G111G110G32G97G114G101G97G32G97G110G100G32G108G111G119G32G69
G80G85G76G83G69
G32G114G97G116G105G110G103G46G32G65G100G100G105G116G105G111G110G97G108G32G102G101G97G116G117G114G101G115G32G111G102G32G116G104G105G115G32MOSFETG32G97G114G101G32G49G55G53G176G67
G111G112G101G114G97G116G105G110G103G32G106G117G110G99G116G105G111G110G32G116G101G109G112G101G114G97G116G117G114G101G32G97G110G100G32G104G105G103G104G32G114G101G112G101G116G105G116G105G118G101G32G112G101G97G107G32G99G117G114G114G101G110G116G32G99G97G112G97G98G105G108G105G116G121G46G32G84G104G101G115G101G32G102G101G97G116G117G114G101G115G32G99G111G109G98G105G110G101G32G116G111
G109G97G107G101G32G116G104G105G115G32MOSFETG32G97G32G104G105G103G104G108G121G32G101G102G102G105G99G105G101G110G116G44G32G114G111G98G117G115G116G32G97G110G100G32G114G101G108G105G97G98G108G101G32G100G101G118G105G99G101G32G102G111G114G32G80G68G80G32G100G114G105G118G105G110G103G32G97G112G112G108G105G99G97G116G105G111G110G115G46
Features
G108 Advanced process technology
G108 Key parameters optimized for PDP Sustain &
Energy Recovery applications
G108 Low E
PULSE
rating to reduce the power
dissipation in Sustain & ER applications
G108 Low Q
G
for fast response
G108 High repetitive peak current capability for
reliable operation
G108 Short fall & rise times for fast switching
G108175°C operating junction temperature for
improved ruggedness
G108 Repetitive avalanche capability for robustness
and reliability
S
D
G
G80G68G80G32G77G79G83G70G69G84
TO-247AC
Absolute Maximum Ratings
Parameter Units
V
GS
Gate-to-Source Voltage V
V
GS
(TRANSIENT) Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current c99
I
RP
@ T
C
= 100°C Repetitive Peak Current c103
P
D
@T
C
= 25°C Power Dissipation W
P
D
@T
C
= 100°C Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case c102 ––– 0.35 °C/W
Max.
42
240
±30
60
±20
117
300
-40 to + 175
10lbc120in (1.1Nc120m)
430
210
2.9
V
DS
min 250 V
V
DS (Avalanche)
typ. 300 V
R
DS(ON)
typ. @ 10V 30 mc58
E
PULSE
typ. 310 µJ
I
RP
max @ T
C
= 100°C 117 A
T
J
max 175 °C
Key Parameters
G80G68G32G45G32G57G54G57G54G53G65