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IRFP250N

器件型号:IRFP250N
器件类别:半导体    分立半导体   
厂商名称:International Rectifier ( Infineon )
厂商官网:http://www.irf.com/
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器件描述

30 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC

30 A, 200 V, 0.075 ohm, N沟道, 硅, POWER, 场效应管, TO-247交流

参数
IRFP250N最小击穿电压 200 V
IRFP250N端子数量 3
IRFP250N加工封装描述 TO-247AC, 3 PIN
IRFP250N状态 Transferred
IRFP250N额定雪崩能量 315 mJ
IRFP250N壳体连接 DRAIN
IRFP250N结构 SINGLE WITH BUILT-IN DIODE
IRFP250N最大漏电流 30 A
IRFP250N最大漏极导通电阻 0.0750 ohm
IRFP250N场效应晶体管技术 METAL-OXIDE SEMICONDUCTOR
IRFP250Njedec_95_code TO-247AC
IRFP250Njesd_30_code R-PSFM-T3
IRFP250Njesd_609_code e0
IRFP250Nmoisture_sensitivity_level NOT SPECIFIED
IRFP250N元件数量 1
IRFP250N操作模式 ENHANCEMENT MODE
IRFP250N包装材料 PLASTIC/EPOXY
IRFP250N包装形状 RECTANGULAR
IRFP250N包装尺寸 FLANGE MOUNT
IRFP250Npeak_reflow_temperature__cel_ NOT SPECIFIED
IRFP250Npolarity_channel_type N-CHANNEL
IRFP250N最大漏电流脉冲 120 A
IRFP250Nqualification_status COMMERCIAL
IRFP250N表面贴装 NO
IRFP250N端子涂层 TIN LEAD
IRFP250N端子形式 THROUGH-HOLE
IRFP250N端子位置 SINGLE
IRFP250Ntime_peak_reflow_temperature_max__s_ NOT SPECIFIED
IRFP250N晶体管应用 SWITCHING
IRFP250N晶体管元件材料 SILICON
IRFP250Nadditional_feature AVALANCHE RATED

文档预览

PD - 95007A
IRFP250NPbF
l
l
l
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= 200V
R
DS(on)
= 0.075Ω
G
S
I
D
= 30A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
‚
Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
30
21
120
214
1.4
± 20
315
30
21
8.6
-55 to +175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.7
–––
40
Units
°C/W
www.irf.com
1
08/18/10
IRFP250NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
–––
–––
2.0
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
43
41
33
4.5
7.5
2159
315
83
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.075
V
GS
= 10V, I
D
= 18A
„
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 18A
„
25
V
DS
= 200V, V
GS
= 0V
µA
250
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
123
I
D
= 18A
21
nC
V
DS
= 160V
57
V
GS
= 10V, See Fig. 6 and 13
„
–––
V
DD
= 100V
–––
I
D
= 18A
ns
–––
R
G
= 3.9Ω
–––
R
D
= 5.5Ω, See Fig. 10
„
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)

Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
30
––– –––
showing the
A
G
integral reverse
––– ––– 120
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
„
––– 186 279
ns
T
J
= 25°C, I
F
= 18A
––– 1.3 2.0
µC
di/dt = 100A/µs
„
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)

Repetitive rating; pulse width limited by
‚
Starting T
J
= 25°C, L = 1.9mH
max. junction temperature. (See Fig. 11)
R
G
= 25Ω, I
AS
= 18A. (See Figure 12)
ƒ
I
SD
18A, di/dt
374A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
„
Pulse width
300µs; duty cycle
2%.
2
www.irf.com
IRFP250NPbF
1000
I
D
, Drain-to-Source Current (A)
100
10
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
1
4.5V
4.5V
1
0.1
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1000
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 30A
I
D
, Drain-to-Source Current (A)
100
T
J
= 175
°
C
10
T
J
= 25
°
C
1
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFP250NPbF
5000
4000
Coss = Cds + Cgd
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
16
I
D
=
18A
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
C, Capacitance(pF)
12
3000
Ciss
8
2000
Coss
1000
4
Crss
0
1
10
100
1000
0
0
20
40
60
80
100
VDS Drain-to-Source Voltage (V)
,
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
1000
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175
°
C
10
I
D
, Drain Current (A)
100
100
10us
T
J
= 25
°
C
1
100us
10
1ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
1
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
www.irf.com
IRFP250NPbF
35
35
30
30
V
DS
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
V
DD
I
D
, Drain Current (A)
I
D
, Drain Current (A)
25
25
20
20
15
15
10
10
5
0
5
0
-
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
25
50
75
100
125
150
50
T
75
100
125
150
, Case Temperature ( ° C)
T
C C
Case Temperature ( ° C)
,
175
175
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
1
Fig 10b.
Switching Time Waveforms
Thermal Response(Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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