IRFI4019HG-117P
器件描述：Integrated Half-Bridge Package
器件厂商：IRF [International Rectifier]
厂商主页：http://www.irf.com/
文件大小：273.8KB，共7页
Sponsor by e络盟器件资料摘要：
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10/08/09
IRFI4019HG-117P
NotesG32G129G32through G134 are on page 2
G68G73G71G73G84G65G76G32G65G85G68G73G79G32G77G79G83G70G69G84
TO-220 Full-Pak 5 PIN
Features
G159 Integrated Half-Bridge Package
G159 Reduces the Part Count by Half
G159 Facilitates Better PCB Layout
G159 Key Parameters Optimized for Class-D
Audio Amplifier Applications
G159 Low R
DS(ON)
for Improved Efficiency
G159 Low Qg and Qsw for Better THD and
Improved Efficiency
G159 Low Qrr for Better THD and Lower EMI
G159 Can Delivery up to 200W per Channel into
8Ω Load in Half-Bridge Configuration
Amplifier
G159 Lead-Free Package
G159 Halogen-Free
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
G1, G2 D1, D2 S1, S2
Gate Drain Source
Absolute Maximum Ratings c104
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current c99
E
AS
Single Pulse Avalanche Energyc100
mJ
P
D
@T
C
= 25°C
Power Dissipation c102
W
P
D
@T
C
= 100°C
Power Dissipation c102
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance c104
Parameter Typ. Max. Units
R
θJC
Junction-to-Case c102
––– 6.9
R
θJA
Junction-to-Ambient c102
––– 65
77
18
7.2
0.15
10lbc120in (1.1Nc120m)
-55 to + 150
300
Max.
6.2
34
±20
150
8.7
G83G50
G71G50
G83G49G47G68G50
G71G49
G68G49
V
DS
150 V
R
DS(ON)
typ. @ 10V 80 mc58
Q
g
typ. 13 nC
Q
sw
typ. 4.1 nC
R
G(int)
typ. 2.5 Ω
T
J
max 150 °C
Key Parameters c104
G80G68G32G45G32G57G54G50G55G52
10/08/09
IRFI4019HG-117P
NotesG32G129G32through G134 are on page 2
G68G73G71G73G84G65G76G32G65G85G68G73G79G32G77G79G83G70G69G84
TO-220 Full-Pak 5 PIN
Features
G159 Integrated Half-Bridge Package
G159 Reduces the Part Count by Half
G159 Facilitates Better PCB Layout
G159 Key Parameters Optimized for Class-D
Audio Amplifier Applications
G159 Low R
DS(ON)
for Improved Efficiency
G159 Low Qg and Qsw for Better THD and
Improved Efficiency
G159 Low Qrr for Better THD and Lower EMI
G159 Can Delivery up to 200W per Channel into
8Ω Load in Half-Bridge Configuration
Amplifier
G159 Lead-Free Package
G159 Halogen-Free
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
G1, G2 D1, D2 S1, S2
Gate Drain Source
Absolute Maximum Ratings c104
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current c99
E
AS
Single Pulse Avalanche Energyc100
mJ
P
D
@T
C
= 25°C
Power Dissipation c102
W
P
D
@T
C
= 100°C
Power Dissipation c102
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance c104
Parameter Typ. Max. Units
R
θJC
Junction-to-Case c102
––– 6.9
R
θJA
Junction-to-Ambient c102
––– 65
77
18
7.2
0.15
10lbc120in (1.1Nc120m)
-55 to + 150
300
Max.
6.2
34
±20
150
8.7
G83G50
G71G50
G83G49G47G68G50
G71G49
G68G49
V
DS
150 V
R
DS(ON)
typ. @ 10V 80 mc58
Q
g
typ. 13 nC
Q
sw
typ. 4.1 nC
R
G(int)
typ. 2.5 Ω
T
J
max 150 °C
Key Parameters c104
G80G68G32G45G32G57G54G50G55G52