www.irf.com 1
09/21/10
IRFH3702PbF
HEXFET
G174
G32Power MOSFET
NotesG32G129 through G134 are on page 10
Applications
Benefits
3mm x 3mm PQFN
G108 Low R
DS(ON)
G108 Very Low Gate Charge
G108 Low Junction to PCB Thermal Resistance
G108 Fully Characterized Avalanche Voltage and
Current
G108 100% Tested for R
G
G108 Lead-Free (Qualified up to 260°C Reflow)
G108 RoHS compliant (Halogen Free)
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
G68
G68
G68
G68
G83
G71
G83
G83
V
DSS
R
DS(on)
max
Qg
30V
7.1mΩ@V
GS
= 10V
9.6nC
G108G32Synchronous Buck Converter for Computer
Processor Power
G108 Isolated DC to DC Converters for Network and
Telecom
G108 Buck Converters for Set-Top Boxes
Absolute Maximum Ratings
Parameter Units
V
DS Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, VGS @ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, VGS @ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, VGS @ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM Pulsed Drain Current
c99
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJC Junction-to-Case c102 ––– 6.0
R
θJA Junction-to-Ambient c103c104 ––– 45 °C/W
R
θJA Junction-to-Ambient (t<10s) c104 ––– 44
-55 to + 150
2.8
0.02
1.8
Max.
16
42
120
± 20
30
12
25
V
W
A
°C
G80G68G32G45G32G57G55G51G54G56G65