01/06/09
Benefits
G108 Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
G108 Fully Characterized Capacitance and Avalanche
SOA
G108 Enhanced body diode dV/dt and dI/dt Capability
G108G32Lead-Free
G108G32Halogen-Free
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IRFB4110GPbF
HEXFET
G174
G32Power MOSFET
Applications
G108G32High Efficiency Synchronous Rectification in SMPS
G108G32Uninterruptible Power Supply
G108G32High Speed Power Switching
G108G32Hard Switched and High Frequency Circuits
S
D
G
TO-220AB
IRFB4110GPbF
GDS
Gate Drain Source
V
DSS
100V
R
DS(on)
typ.
3.7mc58
max. 4.5mc58
I
D (Silicon Limited)
180A c99
I
D (Package Limited)
120A
PD - 96214
D
S
D
G
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM Pulsed Drain Current c100
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS Gate-to-Source Voltage
V
dv/dt Peak Diode Recovery c102 V/ns
T
J Operating Junction and
T
STG Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy c101
mJ
I
AR
Avalanche Currentc3c100
A
E
AR
Repetitive Avalanche Energy c100
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC Junction-to-Case c106
––– 0.402
R
θCS Case-to-Sink, Flat Greased Surface
0.50 ––– °C/W
R
θJA Junction-to-Ambient
––– 62
°C
A
190
See Fig. 14, 15, 22a, 22b
370
5.3
-55 to + 175
± 20
2.5
10lbfc120in (1.1Nc120m)
300
Max.
180c99
130c99
670
120