www.irf.com 1
04/30/09
IRF6727MPbF
IRF6727MTRPbF
DirectFETG153G32Power MOSFET G130
Description
The IRF6727MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6727MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6727MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)G129
Fig 1. Typical On-Resistance vs. Gate Voltage
G84G121G112G105G99G97G108G32G118G97G108G117G101G115G32G40G117G110G108G101G115G115G32G111G116G104G101G114G119G105G115G101G32G115G112G101G99G105G102G105G101G100G41
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
G129 Click on this section to link to the appropriate technical paper.
G130 Click on this section to link to the DirectFET Website.
G131G32Surface mounted on 1 in. square Cu board, steady state.
G132 T
C
measured with thermocouple mounted to top (Drain) of part.
G133G32Repetitive rating; pulse width limited by max. junction temperature.
G134 Starting T
J
= 25°C, L = 0.77mH, R
G
= 25Ω, I
AS
= 25A.
G78G111G116G101G115G58
DirectFETG153 ISOMETRIC
G77G88
G108 RoHS Compliant and Halogen Free G129
G108 Low Profile (<0.7 mm)
G108 Dual Sided Cooling Compatible G129
G108 Ultra Low Package Inductance
G108 Optimized for High Frequency Switching G129
G108 Ideal for CPU Core DC-DC Converters
G108 Optimized for both Sync.FET and some Control FET
applicationG129
G108 Low Conduction and Switching Losses
G108 Compatible with existing Surface Mount Techniques G129
G108 100% Rg tested
SQ SX ST MQ MX MT MP
0 5 10 15 20
V
GS,
Gate -to -Source Voltage (V)
0
1
2
3
4
T
y
p
i
c
a
l

R
D
S
(
o
n
)

(
m
Ω
)
I
D
= 32A
T
J
= 25°C
T
J
= 125°C
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
49nC 16nC 5.3nC 45nC 28nC 1.8V
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, VGS @ 10V
c101
I
D
@ T
A
= 70°C Continuous Drain Current, VGS @ 10V c101 A
I
D
@ T
C
= 25°C Continuous Drain Current, VGS @ 10V
c102
I
DM
Pulsed Drain Current c103
E
AS
Single Pulse Avalanche Energy c104 mJ
I
AR Avalanche Current
c3c103 A25
Max.
26
180
260
±20
30
32
250
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
,

Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
V
G
S
,

G
a
t
e
-
t
o
-
S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 25A
V
DSS
V
GS
R
DS(on)
R
DS(on)
30V max ±20V max 1.22mΩ@ 10V 1.84mΩ@ 4.5V
G80G68G32G45G32G57G54G49G50G50G65