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CD0603-B0230L

器件型号:CD0603-B0230L
器件类别:半导体    分立半导体   
厂商名称:Bourns
厂商官网:http://www.bourns.com
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器件描述

0.1 A, 35 V, SILICON, SIGNAL DIODE

0.1 A, 35 V, 硅, 信号二极管

参数
端子数量2
元件数量1
加工封装描述ROHS COMPLIANT, LEADLESS, PLASTIC PACKAGE-2
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式NO LEAD
端子涂层GOLD
端子位置DUAL
包装材料PLASTIC/EPOXY
工艺SCHOTTKY
结构SINGLE
二极管元件材料SILICON
最大功耗极限0.1500 W
二极管类型SIGNAL DIODE
最大重复峰值反向电压35 V
最大平均正向电流0.1000 A

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PL
IA
NT
Features
Lead free as standard
RoHS compliant*
Leadless
Low stored charge
*R
oH
S
This series is currently available, but not
recommended for new designs. The
Model CD0603-B0xR Series
is the
recommended replacement.
CO
M
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers small-signal high-speed Schottky Barrier Diodes for switching and rectification applications, in compact chip package 0603 and
1005 size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Schottky Barrier Diodes
offer a forward current of 30 mA, 100 mA or 200 mA, a reverse voltage of 30 V and 40 V and also have a low forward voltage option. The
diodes are lead free with Cu/Ni/Au plated terminations and are compatible with lead free manufacturing processes, conforming to many
industry and government regulations on lead free components.
Bourns
®
Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes
roll away much more difficult.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CDxxxx-
B00340
CDxxxx-
B0130L
CDxxxx-
B0140L
CDxxxx-
B0140R
CDxxxx-
B0230
CDxxxx-
B0240
Unit
Forward Voltage (Max.)
Capacitance Between
Terminals (Max.)
(f = 1 MHz)
Reverse Current (Max.)
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific disclaimers as set forth on the last page of this document, and at
www.bourns.com/legal/disclaimer.pdf.
S3
VF
CT
IR
CD0603/1005 Schottky Barrier Chip Diode Series
0.37
(If = 1 mA)
1.5
(Vr = 1 V)
1
(Vr = 40 V)
0.44
(If = 0.1 A)
9
(Vr = 10 V)
30
(Vr = 30 V)
0.55
(If = 0.1 A)
9
(Vr = 10 V)
30
(Vr = 10 V)
0.45
(If = 0.01 A)
9
(Vr = 10 V)
1
(Vr = 10 V)
0.50
(If = 0.2 A)
12
(Vr = 10 V)
30
(Vr = 30 V)
0.55
(If = 0.2 A)
12
(Vr = 10 V)
10
(Vr = 30 V)
V
pF
µA
How To Order
Common Code
Chip Diode
Package
0603
1005
Model
B = Schottky Barrier Series
CD 0603 - B 01 30 L
Average Forward Current (Io) Code
003 = 30 mA
01 = 100 mA
02 = 200 mA
(Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
30 = 30 V
40 = 40 V
Forward Voltage Suffix
L = Low Forward Voltage Vf (CDxxxx-B0130L)
R = Low Reverse Current VR (CDxxxx-B0140R)
CD0603/1005 Schottky Barrier Chip Diode Series
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Repetitive Peak
Reverse Voltage
Reverse Voltage
Average Forward Current
Forward Current,
Surge Peak
Power Dissipation
Storage Temperature
Junction Temperature
Parameter
Repetitive Peak
Reverse Voltage
Reverse Voltage
Average Forward Current
Forward Current,
Surge Peak
Power Dissipation
Storage Temperature
Junction Temperature
Symbol
CD0603-
B00340
CD0603-
B0130L
CD0603-
B0140L
CD0603-
B0140R
CD0603-
B0230
CD0603-
B0240
Unit
VRRM
VR
Io
Isurge
PD
TSTG
TJ
Symbol
45
40
30
500*
35
30
100
1000*
45
40
100
1000*
45
40
100
1000*
150
-40 to +125
-40 to +125
35
30
200
2000*
45
40
200
2000*
V
V
mA
mA
mW
°C
°C
CD1005-
B00340
CD1005-
B0130L
CD1005-
B0140L
CD1005-
B0140R
CD1005-
B0230
CD1005-
B0240
Unit
VRRM
VR
Io
Isurge
PD
TSTG
TJ
45
40
30
500*
200
35
30
100
1000*
250
45
40
100
1000*
250
45
40
100
1000*
250
-40 to +125
-40 to +125
35
30
200
3000*
250
45
40
200
3000*
250
V
V
mA
mA
mW
°C
°C
* Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD0603/1005 Schottky Barrier Chip Diode Series
Product Dimensions
A
Recommended Pad Layout
A
B
B
C
D
Dimension
A (Max.)
C
B (Min.)
C (Min.)
0603
1.25
(0.049)
1.00
(0.039)
0.6
(0.024)
MM
(INCHES)
1005
2.00
(0.079)
1.3
(0.051)
0.7
(0.028)
DIMENSIONS:
E
Dimension
A
B
C
D
E
0603
1.60 - 1.80
(0.063 - 0.071)
0.80 - 1.00
(0.031 - 0.039)
0.45
Typ.
(0.018)
0.70 - 0.85
(0.027 - 0.033)
0.70
Typ.
(0.028)
MM
(INCHES)
1005
2.40 - 2.60
(0.095 - 0.102)
1.10 - 1.30
(0.043 - 0.051)
0.50
Typ.
(0.020)
0.70 - 0.90
(0.027 - 0.035)
1.00
Typ.
(0.039)
Physical Specifications
Case ....................................0603(1608) / 1005(2512) Molded plastic
Terminals..........................Gold plated, solderable per MIL-STD-750,
Method 2026
Polarity ....................................................Indicated by cathode band
Mounting Position ........................................................................Any
Weight ............................................0.000159 ounces / 0.0045 grams
Typical Part Marking
CDxxxx-B00340 ..............................................................................B2
CDxxxx-B0130L ..............................................................................B3
CDxxxx-B0140L ..............................................................................B8
CDxxxx-B0140R..............................................................................B9
CDxxxx-B0230 ................................................................................B5
CDxxxx-B0240 ................................................................................B7
DIMENSIONS:
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD0603/1005 Schottky Barrier Chip Diode Series
Rating and Characteristic Curves: CDxxxx-B00340
Forward Characteristics
10
Reverse Characteristics
1000000
100000
1
Forward Current (mAmps)
10000
Reverse Current (nA)
125
°C
85
°C
1000
0.1
125
°C
85
°C
25
°C
-25
°C
100
25
°C
0.01
0.0
0.1
0.2
0.3
0.4
0.5
10
0
10
20
Reverse Voltage (Volts)
30
40
Forward Voltage (Volts)
Derating Curve
120
Mounting on glass epoxy PCBs
Capacitance Between Terminals
16
F = 1 MHz
Ta = 25
°C
14
Capacitance Between Terminals (pF)
100
12
80
I0 Current (%)
10
60
8
6
4
40
20
2
0
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Reverse Voltage (Volts)
Ambient Temperature (°C)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD0603/1005 Schottky Barrier Chip Diode Series
Rating and Characteristic Curves: CDxxxx-B0130L
Forward Characteristics
1000
Reverse Characteristics
1000000
100000
Forward Current (mAmps)
125
°C
100
10000
Reverse Current (nA)
85
°C
1000
10
100
25
°C
1
0.0
125
°C
0.1
85
°C
0.2
25
°C
0.3
-25
°C
0.4
0.5
0.6
10
0
5
10
15
20
25
30
Forward Voltage (Volts)
Reverse Voltage (Volts)
Derating Curve
120
Mounting on glass epoxy PCBs
Capacitance Between Terminals
16
F = 1 MHz
Ta = 25
°C
14
100
Capacitance Between Terminals (pF)
12
80
I0 Current (%)
10
60
8
6
40
4
20
2
0
0
25
50
75
100
125
150
0
0
5
10
15
20
25
30
Ambient Temperature (°C)
Reverse Voltage (Volts)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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