BSC340N08NS3 G
OptiMOSTM3 Power-Transistor Product Summary
V DS
Features R DS(on),max 80 V
Ideal for high frequency switching ID 34 m
Optimized technology for DC/DC converters 23 A
Excellent gate charge x R DS(on) product (FOM)
Superior thermal resistance
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Halogen-free according to IEC61249-2-21
Type BSC340N08NS3 G
Package PG-TDSON-8
Marking 340N08NS
Maximum ratings, at T j=25 C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current ID V GS=10 V, T C=25 C 23 A
V GS=10 V, T C=100 C 15
V GS=10 V, T A=25 C, 7
R thJA=50 K/W2)
Pulsed drain current3) I D,pulse T C=25 C 92
Avalanche energy, single pulse4) E AS I D=12 A, R GS=25
Gate source voltage V GS 20 mJ
20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.6 page 1 2009-11-04
BSC340N08NS3 G
Maximum ratings, at T j=25 C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Power dissipation P tot T C=25 C 32 W
T A=25 C, 2.5
R thJA=50 K/W2)
Operating and storage temperature T j, T stg -55 ... 150 C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Values Unit
typ. max.
min.
Thermal characteristics
Thermal resistance, junction - case R thJC bottom - - 3.9 K/W
top 20
Device on PCB R thJA minimal footprint - - 62
6 cm2 cooling area2) - - 50
Electrical characteristics, at T j=25 C, unless otherwise specified
Static characteristics V (BR)DSS V GS=0 V, I D=1 mA 80 - -V
Drain-source breakdown voltage
Gate threshold voltage V GS(th) V DS=V GS, I D=12 A 2 2.8 3.5
Zero gate voltage drain current
I DSS V DS=80 V, V GS=0 V, - 0.1 1 A
Gate-source leakage current T j=25 C
Drain-source on-state resistance
V DS=80 V, V GS=0 V, - 10 100
Gate resistance T j=125 C
Transconductance
I GSS V GS=20 V, V DS=0 V - 10 100 nA
R DS(on) V GS=10 V, I D=12 A - 27.5 34 m
V GS=6 V, I D=6 A - 38.1 66
RG - 1 -
g fs |V DS|>2|I D|R DS(on)max, 8 16 -S
I D=12 A
Rev. 2.6 page 2 2009-11-04
BSC340N08NS3 G
Parameter Symbol Conditions Values Unit
typ. max.
min.
Dynamic characteristics C iss - 564 756 pF
Input capacitance C oss V GS=0 V, V DS=40 V, - 156 204
Output capacitance f =1 MHz
Reverse transfer capacitance
Turn-on delay time Crss - 7 -
Rise time
Turn-off delay time t d(on) - 8 - ns
Fall time
tr V DD=40 V, V GS=10 V, - 3 -
t d(off) I D=12 A, R G=1.6 - 11 -
tf - 2 -
Gate Charge Characteristics5) Q gs - 2.4 - nC
Gate to source charge
Gate charge at threshold Q g(th) - 1.3 -
Gate to drain charge
Switching charge Q gd V DD=40 V, I D=12 A, - 1.5 -
Gate charge total
Gate plateau voltage Q sw V GS=0 to 10 V - 2.6 -
Output charge
Qg - 6.8 9.1
V plateau - 5.2 -V
Q oss V DD=40 V, V GS=0 V - 9 12 nC
Reverse Diode
Diode continuous forward current I S - - 23 A
T C=25 C
Diode pulse current I S,pulse - - 92
Diode forward voltage V SD V GS=0 V, I F=12 A, - 0.9 1.2 V
T j=25 C
Reverse recovery time t rr V R=40 V, I F=12A, - 43 - ns
Reverse recovery charge
Q rr di F/dt =100 A/s - 41 - nC
5) See figure 16 for gate charge parameter definition
Rev. 2.6 page 3 2009-11-04
BSC340N08NS3 G
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS10 V
40 25
20
30
15
20
10
10
5
P tot [W]
I D [A]
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
T C [C] T C [C]
3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T
102 10
limited by on-state 1 s
resistance
101 I D [A] 10 s 0.5
Z thJC [K/W]100 s
100 1
1 ms
10-1 0.2
10-1
0.1
Rev. 2.6
0.05
0.02
0.1
0.01
single pulse
10 ms
DC
100 101 102 0.01 0 0 0 0 0 0 1
10-6
10-5 10-4 10-3 10-2 10-1 100
V DS [V] t p [s]
page 4 2009-11-04
5 Typ. output characteristics BSC340N08NS3 G
I D=f(V DS); T j=25 C 6 Typ. drain-source on resistance
parameter: V GS R DS(on)=f(I D); T j=25 C
parameter: V GS
100
70
10 V 9 V
8V 5 V 5.5 V 6 V 7V 8V
80 60
I D [A]60 50
R DS(on) [m]
7V
40 40
6V 9V
20 30
5.5 V 10 V
5V
4.5 V 20
0
0
0 1 2 3 4 5 20 40 60 80 100
V DS [V] I D [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C
parameter: T j
30 40
25
30
20
I D [A]15 20
g fs [S]
10
10
5
150 C 25 C
0 0
0 1 2 3 4 5 6 7 0 10 20 30 40 50
V GS [V] I D [A]
Rev. 2.6 page 5 2009-11-04
9 Drain-source on-state resistance BSC340N08NS3 G
R DS(on)=f(T j); I D=12 A; V GS=10 V 10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
60 4
55
50 3
45 120 A
12 A
40
2
max
35
R DS(on) [m]
V GS(th) [V]
30 typ
25
1
20
15
10 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [C] T j [C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j
104
100
103
150C,max
Ciss 25 C
150 C
25C,max
C [pF]102 Coss 10
I F [A]
101
Crss
100 1
0
20 40 60 80 0.0 0.5 1.0 1.5 2.0
Rev. 2.6
V DS [V] V SD [V] 2009-11-04
page 6
13 Avalanche characteristics BSC340N08NS3 G
I AS=f(t AV); R GS=25 14 Typ. gate charge
parameter: T j(start) V GS=f(Q gate); I D=12 A pulsed
parameter: V DD
100
12
40 V
10
16 V 64 V
8
I AV [A] 10 6
V GS [V]
125 C 100 C 25 C 4
2
1 1 10 100 1000 0
0.1 012345678
t AV [s] Q gate [nC]
15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
100
V GS
90 Qg
80
V BR(DSS) [V] 70
V g s(th)
60
50 Q g(th) Q sw Q gate
Q gd 2009-11-04
40 Q gs
-60 -20 20 60 100 140 180
T j [C]
Rev. 2.6 page 7
BSC340N08NS3 G
PG-TDSON-8
Rev. 2.6 page 8 2009-11-04
BSC340N08NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.6 page 9 2009-11-04
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