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AP4310

器件型号:AP4310
厂商名称:BCD Semi(Diodes)
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器件描述

DUAL OP AMP AND VOLTAGE REFERENCE

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Data Sheet
DUAL OP AMP AND VOLTAGE REFERENCE
General Description
The AP4310 is a monolithic IC specifically designed
to regulate the output current and voltage levels of
switching battery chargers and power supplies.
The device contains two Op Amps and a 2.5V preci-
sion shunt voltage reference. Op Amp 1 is designed for
voltage control with its non-inverting input internally
connects to the output of the shunt regulator. Op Amp
2 is for current control with both inputs uncommitted.
The IC offers the power converter designer a control
solution that features increased precision with a corre-
sponding reduction in system complexity and cost.
The AP4310 is available in standard packages of DIP-
8 and SOIC-8.
AP4310
Features
Op Amp
·
Input Offset Voltage: 0.5mV
·
Supply Current: 75µA per Op Amp at 5.0V Sup-
ply Voltage
·
Unity Gain Bandwidth: 1MHz
·
Output Voltage Swing: 0 to (V
CC
-1.5) V
·
Power Supply Range: 3 to 36V
Voltage Reference
·
Fixed Output Voltage Reference: 2.5V
·
Voltage Tolerance:
±
0.4%,
±
1%
·
Sink Current Capability: 0.05 to 80mA
·
Typical Output Impedance: 0.2
Applications
·
·
Battery Charger
Switching Power Supply
SOIC-8
DIP-8
Figure 1. Package Types of AP4310
Jul. 2006 Rev. 1. 3
1
BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL OP AMP AND VOLTAGE REFERENCE
Pin Configuration
M Package/P Package
(SOIC-8/DIP-8)
OUTPUT 1
INPUT 1-
INPUT 1+ / V
KA
GND
1
2
3
4
8
7
6
5
V
CC
OUTPUT 2
INPUT 2-
INPUT 2+
AP4310
Top View
Figure 2. Pin Configuration of AP4310
Functional Block Diagram
OUTPUT 1
1
Op
Amp 1
-
+
8
V
CC
INPUT 1-
2
7
OUTPUT 2
INPUT 1+ / V
KA
+
3
-
6
Op
Amp 2
INPUT 2-
GND
4
5
INPUT 2+
Figure 3. Functional Block Diagram of AP4310
Jul. 2006 Rev. 1. 3
2
BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL OP AMP AND VOLTAGE REFERENCE
Ordering Information
AP4310
AP4310
-
E1: Lead Free
Blank: Tin Lead
TR: Tape and Reel
Blank: Tube
Package
M: SOIC-8
P: DIP-8
Circuit Type
Voltage Tolerance
A:
±
0.4%
Blank:
±
1%
Package
Reference
Voltage
2.5V
Voltage
Tolerance
Tempera-
ture Range
-40 to105
o
C
Part Number
Tin Lead
AP4310AP
AP4310P
Lead Free
AP4310AP-E1
AP4310P-E1
AP4310AM-E1
AP4310AMTR-E1
AP4310M-E1
AP4310MTR-E1
Marking ID
Tin Lead
AP4310AP
AP4310P
4310AM
4310AM
4310M
4310M
Lead Free
AP4310AP-E1
Packing
Type
Tube
±
0.4%
DIP-8
±
1%
±
0.4%
AP4310P-E1
AP4310AM-E1
Tube
SOIC-8
2.5V
-40 to105
o
C AP4310AM
AP4310AMTR
-40 to105
o
C AP4310M
AP4310MTR
AP4310AM-E1 Tape & Reel
AP4310M-E1
AP4310M-E1
Tube
Tape & Reel
±
1%
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 3
3
BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL OP AMP AND VOLTAGE REFERENCE
Absolute Maximum Ratings (Note 1)
Parameter
Power Supply Voltage (V
CC
to GND)
Op Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6)
Op Amp 2 Input Differential Voltage (Pins 5, 6)
Voltage Reference Cathode Current (Pin 3)
Power Dissipation (T
A
=25 C)
Operating Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering 10s)
o
AP4310
Symbol
V
CC
V
IN
V
ID
I
K
DIP-8
P
D
T
J
T
STG
T
LEAD
Value
40
-0.3 to V
CC
+0.3
40
100
800
500
150
-65 to 150
260
Unit
V
V
V
mA
mW
o
o
o
SOIC-8
C
C
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Temperature
Min
3
-40
Max
36
105
Unit
V
o
C
Jul. 2006 Rev. 1. 3
4
BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL OP AMP AND VOLTAGE REFERENCE
Electrical Characteristics
Operating Conditions: V
CC
=
+
5V, T
A
=25
o
C unless otherwise specified.
Parameter
Conditions
Min
Typ
0.15
0.20
Max
0.25
mA
0.30
Unit
AP4310
Total Supply Current, excluding Cur- V =5V, no load, -40
o
C
T
105
o
C
CC
A
rent in Voltage Reference
V
CC
=30V, no load, -40
o
C
T
A
105
o
C
Voltage Reference Section
AP4310A
Reference Voltage
AP4310
I
K
=10mA
T
A
=2
5
o
C
-40
o
C
T
A
105 C
o
2.49
2.48
2.475
o
2.50
2.50
2.50
2.50
5
0.01
2.51
V
2.52
2.525
V
2.55
24
0.05
0.5
mV
mA
T
A
=2
5
o
C
-40
o
C
T
A
105 C
2.45
Reference Voltage Deviation
Over Full Temperature Range
Minimum Cathode Current
for Regulation
Dynamic Impedance
I
K
=10mA, T
A
=-40 to 105
o
C
I
K
=1.0 to 80mA, f<1kHz
0.2
Op Amp 1 Section
(V
CC
=5V, V
O
=1.4V, T
A
=25
o
C, unless otherwise noted)
Input Offset Voltage
T
A
=25
o
C
T
A
=-40 to 105 C
Input Offset Voltage
Temperature Drift
T
A
=-40 to 105
o
C
7
o
0.5
3
mV
5
µV/
o
C
150
nA
dB
dB
mA
mA
V
100
mV
V/µ s
Input Bias Current (Inverting Input T =25
o
C
A
Only)
Large Signal Voltage Gain
Power Supply Rejection Ratio
Source
Output Current
Sink
V
CC
=15V, R
L
=2kΩ, V
O
=1.4 to 11.4V
V
CC
=5 to 30V
V
CC
=15V, V
ID
=1V, V
O
=2V
V
CC
=15V, V
ID
=-1V, V
O
=2V
V
CC
=30V, R
L
=10kΩ, V
ID
=1V
V
CC
=30V, R
L
=10kΩ, V
ID
=-1V
V
CC
=18V, R
L
=2kΩ, A
V
=1,
V
IN
=0.5 to 2V, C
L
=100pF
V
CC
=30V, R
L
=2kΩ, C
L
=100pF
0.2
85
70
20
7
27
20
100
90
40
20
28
17
0.5
Output Voltage Swing (High)
Output Voltage Swing (Low)
Slew Rate
Unity Gain Bandwidth
0.7
1.0
MHz
Jul. 2006 Rev. 1. 3
5
BCD Semiconductor Manufacturing Limited
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