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AO3401

器件型号:AO3401
器件类别:半导体    分立半导体   
厂商名称:AOS[Alpha & Omega Semiconductor]
厂商官网:http://www.aosmd.com/about
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器件描述

4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

参数
AO3401端子数量 3
AO3401最小击穿电压 30 V
AO3401加工封装描述 绿色 PACKAGE-3
AO3401状态 CONSULT MFR
AO3401包装形状 矩形的
AO3401包装尺寸 SMALL OUTLINE
AO3401表面贴装 Yes
AO3401端子形式 GULL WING
AO3401端子位置
AO3401包装材料 塑料/环氧树脂
AO3401结构 单一的 WITH BUILT-IN 二极管
AO3401元件数量 1
AO3401晶体管应用 开关
AO3401晶体管元件材料
AO3401通道类型 P沟道
AO3401场效应晶体管技术 金属-OXIDE SEMICONDUCTOR
AO3401操作模式 ENHANCEMENT
AO3401晶体管类型 通用小信号
AO3401最大漏电流 4 A
AO3401最大漏极导通电阻 0.0500 ohm

文档预览

AO3401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3401 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Standard product AO3401 is Pb-free
(meets ROHS & Sony 259 specifications). AO3401L
is a Green Product ordering option. AO3401 and
AO3401L are electrically identical.
Features
V
DS
(V) = -30V
I
D
= -4.2 A (V
GS
= -10V)
R
DS(ON)
< 50mΩ (V
GS
= -10V)
R
DS(ON)
< 65mΩ (V
GS
= -4.5V)
R
DS(ON)
< 120mΩ (V
GS
= -2.5V)
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
A
A
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO3401
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-4.2A
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-4.5V, I
D
=-4A
7
53
80
11
-0.75
-0.7
-25
42
50
75
65
120
-1
-2.2
954
115
77
6
9.4
2
3
6.3
3.2
38.2
12
20.2
11.2
-1
Min
-30
-1
-5
±100
-1.3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
g
FS
V
SD
I
S
V
GS
=-2.5V, I
D
=-1A
Forward Transconductance
V
DS
=-5V, I
D
=-5A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-15V, I
D
=-4A
V
GS
=-10V, V
DS
=-15V, R
L
=3.6Ω,
R
GEN
=6Ω
I
F
=-4A, dI/dt=100A/µs
I
F
=-4A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25.00
-10V
20.00
15.00
10.00
5.00
0.00
0.00
-2.5V
-4.5V
-3V
-I
D
(A)
-I
D
(A)
6
4
2
0
1.00
2.00
3.00
4.00
5.00
0
0.5
1
1.5
2
2.5
3
-V
DS
(Volts)
Fig 1: On-Region Characteristics
120
Normalized On-Resistance
100
R
DS(ON)
(m
)
80
60
40
20
0.00
V
GS
=-2.5V
V
GS
=-4.5V
1.8
1.6
1.4
1.2
1
0.8
2.00
4.00
6.00
8.00
10.00
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
I
D
=-2A
-I
S
(A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
V
GS
=-2.5V
I
D
=-1A
I
D
=-3.5A, V
GS
=-4.5V
I
D
=-3.5A, V
GS
=-10V
-V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
8
10
V
DS
=-5V
V
GS
=-2V
V
GS
=-10V
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
R
DS(ON)
(m
)
130
110
90
70
50
30
10
125°C
Alpha & Omega Semiconductor, Ltd.
AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
-V
GS
(Volts)
3
2
1
0
0
2
4
6
8
10
12
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=-15V
I
D
=-4A
Capacitance (pF)
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
C
iss
100.0
T
J(Max)
=150°C
T
A
=25°C
40
10µs
Power (W)
100µs
1ms
0.1s
30
20
10
10s
DC
10
-V
DS
(Volts)
100
0
0.001
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
R
DS(ON)
10.0 limited
1.0
1s
10ms
0.1
0.1
1
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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