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AO3400

器件型号:AO3400
器件类别:分立半导体    MOS(场效应管)   
厂商名称:KEXIN
厂商官网:http://www.kexin.com.cn/html/index.htm
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器件描述

漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):5.8A 栅源极阈值电压:1.4V @ 250uA 漏源导通电阻:28mΩ @ 5.8A,10V 最大功率耗散(Ta=25°C):1.4W 类型:N沟道 N沟道,30V 5.8A

参数
产品属性属性值
属性:参数值
商品目录:MOS(场效应管)
漏源电压(Vdss):30V
连续漏极电流(Id)(25°C 时):5.8A
栅源极阈值电压:1.4V @ 250uA
漏源导通电阻:28mΩ @ 5.8A,10V
最大功率耗散(Ta=25°C):1.4W
类型:N沟道

文档预览

SMD Type
N-Channel Enhancement Mode
Field Effect Transistor
KO3400
(AO3400)
Features
V
DS (V)
= 30V
I
D
= 5.8 A (V
GS
= 10V)
+0.1
2.4
-0.1
MOSFET
IC
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
R
DS(ON)
R
DS(ON)
R
DS(ON)
28m
33m
52m
(V
GS
= 10V)
(V
GS
= 4.5V)
(V
GS
= 2.5V)
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
1. Gate
2.Emitter
2. Source
+0.1
0.38
-0.1
0-0.1
3. Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
=25
T
A
=70
Pulsed Drain Current *
Power Dissipation
T
A
=25
T
A
=70
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction and Storage Temperature Range
R
thJA
R
thc
T
J
, T
STG
I
DM
P
D
Symbol
V
DS
V
GS
I
D
Rating
30
12
5.8
4.9
30
1.4
1
85
43
-55 to 150
/W
/W
W
A
Unit
V
V
* Repetitive rating, pulse width limited by junction temperature.
www.kexin.com.cn
1
SMD Type
KO3400
(AO3400)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
I
D
=250
Testconditons
A, V
GS
=0V
Min
30
IC
MOSFET
Typ
Max
Unit
V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V ,T
J
=55
V
DS
=0V, V
GS
=
V
DS
=V
GS
I
D
=250
V
GS
=10V, I
D
=5.8A
12V
A
0.7
1.1
22.8
T
J
=125
32
27.3
43.3
30
10
15
823
V
GS
=0V, V
DS
=15V, f=1MHz
99
77
V
GS
=0V, V
DS
=0V, f=1MHz
1.4
9.7
V
GS
=4.5V, V
DS
=15V, I
D
=5.8A
1.6
3.1
3.3
V
GS
=10V, V
DS
=15V, R
L
=2.7
,R
GEN
=3
4.8
26.3
4.1
I
F
=5A, d
I
/d
t
=100A/ s
I
F
=5A, d
I
/d
t
=100A/ s
16
8.9
1
A
5
100
1.4
28
39
33
52
m
m
A
S
1050
pF
pF
pF
2
12
nC
nC
nC
5
7
40
6
20
12
2.5
30
ns
ns
ns
ns
ns
nC
A
A
V
nA
V
m
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.8A
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Pulsed Body-Diode Current *
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
I
S
I
SM
V
SD
V
GS
=4.5V, V
DS
=5V
V
DS
=5V, I
D
=5A
I
S
=1A,V
GS
=0V
0.71
1
* Repetitive rating, pulse width limited by junction temperature.
2
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