EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn
器件描述：N - CHANNEL 30V - 0.020 ohm - 30A DPAK STripFET POWER MOSFET
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：85.04KB
文件页数：8
PDF阅读：STD30NF03L.pdf (点击阅读器件资料)
摘要：
STD30NF03L
N - CHANNEL 30V - 0.020 ? - 30A DPAK
STripFET? POWER MOSFET
n TYPICAL RDS(on) = 0.020 ?
n LOW THRESHOLD DRIVE
n ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size?” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SOLENOID AND RELAY DRIVERS
n MOTOR CONTROL, AUDIO AMPLIFIERS
n DC-DC & DC-AC CONVERTERS
?
INTERNAL SCHEMATIC DIAGRAM
October 1999
1
3
DPAK
TO-252
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
=0) 30 V
V
DGR
Drain- gate Voltage (R
GS
=20k?)3
GS Gate-source Voltage ± 20 V
I
D
(?) Drain Current (continuous) at T
c
=25
o
C30A
Drain Current (continuous) at T
c
= 100
o
C19
DM
(??) Drain Current (pulsed) 120 A
P
tot
Total Dissipation at T
c
=25
o
C4W
Derating Factor 0.27 W/
o
C
EAS(1) Single Pulse Avalanche Energy 100 m/J
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(??) Pulse width limitedby safe operating area ( 1) starting Tj =25
o
C, ID =15A,VDD = 15V
(?)Current limited by the package
TYPE V
DSS
R
DS(o n)
I
D
STD30NF03L 30 V < 0.025 ? 30 A
1/8
相关器件：
|
