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器件描述：N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET⑩ II POWER MOSFET
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：457.64KB
文件页数：10
PDF阅读：STD30NF06.pdf (点击阅读器件资料)
摘要：
1/10March 2002
.
STD30NF06
N-CHANNEL 60V - 0.020 ? - 28A IPAK/DPAK
STripFET? II POWER MOSFET
a73 TYPICAL R
DS
(on) = 0.020?
a73 EXCEPTIONAL dv/dt CAPABILITY
a73 100% AVALANCHE TESTED
a73 THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
a73 SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size?" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
a73 HIGH CURRENT, HIGH SWITCHING SPEED
a73 MOTOR CONTROL , AUDIO AMPLIFIERS
a73 SOLENOID AND RELAY DRIVERS
a73 DC-DC & DC-AC CONVERTERS
TYPE V
DSS
R
DS(on)
I
D
STD30NF06 60 V <0.028 ? 28 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
(?) Pulse width limited by safe operating area. (1) I
SD
≤28A, di/dt ≤300A/?s, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 30V
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0) 60 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k?) 60 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at T
C
= 25°C 28 A
I
D
Drain Current (continuous) at T
C
= 100°C 20 A
I
DM
(?) Drain Current (pulsed) 112 A
P
tot
Total Dissipation at T
C
= 25°C 70 W
Derating Factor 0.47 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 10 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 230 mJ
T
stg
Storage Temperature
-55 to 175 °C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
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