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器件描述：Silicon NPN Phototransistor
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：43.29KB
文件页数：2
PDF阅读：Z123.pdf (点击阅读器件资料)
摘要：
1
PNZ123S
Silicon NPN Phototransistor
For optical control systems
Can be combined with LN62S to form an photo interrupter
Phototransistors
Absolute Maximum Ratings (Ta = 25?C)
Parameter Symbol Ratings Unit
Collector to emitter voltage V
CEO
20 V
Emitter to collector voltage V
ECO
5V
Collector current I
C
10 mA
Collector power dissipation P
C
50 mW
Operating ambient temperature T
opr
–25 to +85 ?C
Storage temperature T
stg
–30 to +100 ?C
?3.0– 0.2
?0.45– 0.05
?0.3– 0.05
0.9– 0.15
4.1
–
0.3
2.0
–
0.2
12.5 min.
1
2
Unit : mm
1: Emitter
2: Collector
,,
,, ,
,
(Input pulse)
(Output pulse)
50? R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT 10%
90%
Sig.IN
t
d
t
r
t
f
Electro-Optical Characteristics (Ta = 25?C)
Parameter Symbol Conditions min typ max Unit
Dark current I
CEO
V
CE
= 10V 1 100 nA
Collector photo current I
CE(L)
V
CE
= 10V, L = 1000 lx
*1
400 700 ?A
Peak sensitivity wavelength λ
P
V
CE
= 10V 800 nm
Acceptance half angle θ Measured from the optical axis to the half power point 30 deg.
Rise time t
r
*2
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100?
3.5 ?s
Fall time t
f
*2
5 ?s
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Features
High sensitivity
Low dark current
Fast response : t
r
= 3.5 ?s (typ.)
Small size (? 3) ceramic package
相关器件：PNZ123S
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