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器件描述：Silicon PNP epitaxial planar type(For power amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：50.21KB
文件页数：2
PDF阅读：2SB929A.pdf (点击阅读器件资料)
摘要：
1
Power Transistors
2SB929, 2SB929A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1252 and 2SD1252A
n
Features
l High forward current transfer ratio h
FE
which has satisfactory linearity
l Low collector to emitter saturation voltage V
CE(sat)
l N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
n
Absolute Maximum Ratings (T
C
=25?C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–5
–5
–3
35
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
?C
?C
2SB929
2SB929A
2SB929
2SB929A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25?C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –3A, I
B
= – 0.375A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –1A, I
B1
= – 0.1A, I
B2
= 0.1A
min
–60
–80
70
10
typ
30
0.5
1.2
0.3
max
–200
–200
–300
–300
–1
250
–1.8
–1.2
Unit
m A
m A
mA
V
V
V
MHz
m s
m s
m s
2SB929
2SB929A
2SB929
2SB929A
2SB929
2SB929A
Note: Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the
rank classification.
*
h
FE1
Rank classification
Rank Q P
h
FE1
70 to 150 120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5– 0.2
6.0– 0.5
10.0
–
0.3
10.5min.
2.0
1.5
–
0.1
1.5max.
0.8– 0.1
5.08– 0.5
2.54– 0.3
1.1max.
0.5max.
1.0– 0.1
3.4– 0.3
213
Unit: mm
8.5– 0.2
4.4
–
0.5 2.0
10.0
–
0.3
14.7
–
0.5
4.4
–
0.5
6.0– 0.3
3.4– 0.3
2.54– 0.3
5.08– 0.5
1.0– 0.1
0.8– 0.1
1.5
+0 –0.4
3.0
+0.4 –0.2
0 to 0.4
1.1 max.
R0.5
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
相关器件：2SD1252 2SD1252A 2SB929
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